公开(公告)号：US20140159224A1

公开(公告)日：2014-06-12

申请号：US14093337

申请日：2013-11-29

Applicant: Renesas Electronics Corporation

Inventor： Makoto OKADA ,  Shuuichi KARIYAZAKI ,  Wataru SHIROI ,  Masafumi SUZUHARA ,  Naoko SERA

IPC: H01L23/02 ,  H01L23/498 ,  H01L23/28

CPC classification number: H01L25/0655 ,  H01L23/02 ,  H01L23/04 ,  H01L23/055 ,  H01L23/28 ,  H01L23/498 ,  H01L23/49816 ,  H01L23/562 ,  H01L24/33 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/3224 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/92125 ,  H01L2924/1015 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/16251 ,  H01L2924/167 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A semiconductor device in which warpage is less likely to occur. In the semiconductor device, two semiconductor chips are mounted over a diagonal of a substrate and one of the semiconductor chips lies over the intersection of the two diagonals of the substrate. The semiconductor device gives a solution to the following problem. In order to implement a semiconductor device with a plurality of semiconductor chips mounted on a substrate, generally the substrate must have a larger area. If the area of the substrate is increased without an increase in its thickness, warpage or deformation of the semiconductor device is more likely to occur. It is difficult or impossible to mount a warped or deformed semiconductor device over a wiring substrate.

Abstract translation: 其中翘曲不太可能发生的半导体器件。 在半导体器件中，两个半导体芯片安装在衬底的对角线上，并且半导体芯片之一位于衬底的两个对角线的交叉点之上。 半导体器件给出了以下问题的解决方案。 为了实现具有安装在基板上的多个半导体芯片的半导体器件，通常基板必须具有更大的面积。 如果基板的面积增加而不增加其厚度，则更可能发生半导体器件的翘曲或变形。 将翘曲或变形的半导体器件安装在布线基板上是困难或不可能的。

公开(公告)号：US20150076684A1

公开(公告)日：2015-03-19

申请号：US14553835

申请日：2014-11-25

Applicant: Renesas Electronics Corporation

Inventor： Makoto Okada ,  Shuuichi KARIYAZAKI ,  Wataru SHIROI ,  Masafumi SUZUHARA ,  Naoko SERA

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/04

CPC classification number: H01L25/0655 ,  H01L23/02 ,  H01L23/04 ,  H01L23/055 ,  H01L23/28 ,  H01L23/498 ,  H01L23/49816 ,  H01L23/562 ,  H01L24/33 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/3224 ,  H01L2224/32245 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/92125 ,  H01L2924/1015 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/16251 ,  H01L2924/167 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/19106 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A semiconductor device includes a main surface, a back surface opposite to the main surface, a first side on the main surface, a second side opposite to the first side, a third side between the first side and the second side, a fourth side opposite to the third side, a first point on a periphery of the main surface between the first side and the third side, a second point on the periphery of the main surface between the second side and the fourth side, a third point on the periphery of the main surface between the first side and the fourth side, anda fourth point on the periphery of the main surface between the third side and the second side, a first semiconductor chip disposed over the main surface of the substrate, and a second semiconductor chip disposed over the main surface of the substrate.

Abstract translation: 半导体器件包括主表面，与主表面相对的后表面，主表面上的第一侧，与第一侧相对的第二侧，第一侧和第二侧之间的第三侧，与第一侧相对的第四侧 在第三侧，在第一侧面和第三面之间的主表面的周边上的第一点，在第二侧面和第四侧面之间的主表面的周边上的第二点， 第一侧面和第四侧面之间的主表面以及位于第三侧面和第二侧面之间的主表面周边的第四点，设置在基板的主表面上的第一半导体芯片和第二半导体芯片 设置在基板的主表面上。