Microwave examination of semiconductive shields
    7.
    发明授权
    Microwave examination of semiconductive shields 失效
    半导体屏蔽微波检查

    公开(公告)号:US4571544A

    公开(公告)日:1986-02-18

    申请号:US550378

    申请日:1983-11-10

    申请人: Mark D. Walton

    发明人: Mark D. Walton

    IPC分类号: G01R27/04 G01R31/02

    CPC分类号: G01R27/04 G01R31/021

    摘要: A method of continuously and uniformly examining a semiconductor shield of an electrical cable. The method includes the step of providing a cavity structure capable of supporting a relatively high order coaxial mode of microwave energy at a relatively high quality factor when the cavity is dielectrically unloaded. Microwave energy is directed to the cavity in a manner that excites the high order mode, and a cable having a semiconductor shield is continuously directed through the cavity structure. The semiconductive material loads the cavity structure and thereby changes the quality factor thereof. The loading of the structure and the changing quality factor thereof are continuously monitored to provide an indication of changes in the integrity of the semiconductive shield.

    摘要翻译: 一种连续且均匀地检查电缆的半导体屏蔽的方法。 该方法包括以下步骤:当空腔被介电地卸载时,提供能够以相对高的品质因数支持微波能量的较高阶同轴模式的空腔结构。 微波能以激发高阶模式的方式引导到空腔,并且具有半导体屏蔽的电缆被连续地引导通过空腔结构。 半导体材料加载空腔结构,从而改变其质量因素。 连续监测结构的负载和不断变化的品质因数,以提供半导体屏蔽的完整性变化的指示。