摘要:
A content addressable memory (CAM) having a plurality of ternary memory cells, each ternary half cell comprising an equal number of transistors of a p-type and an n-type, the p-type transistors being formed in a first well region and the n-type transistors being formed in a second well region, the wells having at most one p+ to n+ region spacing, the transistors being interconnected to form the half ternary CAM cell and wherein the interconnections for the cell is restricted to a silicon layer and a first metal layer and connections between said cell and external signal lines is restricted to at least a second metal layer.
摘要:
An apparatus for modifying a command message (CMD) received from a source apparatus to control a target device parameter of a target apparatus within a digital multimedia network, wherein a hierarchical parameter address (HPA) or a parameter value contained in said command message (CMD) is changed according to at least one change script to provide a modified command message (CMD').
摘要:
The present invention relates to a digital multimedia network 1 with latency control comprising apparatuses for processing of data streams, wherein a borderline input apparatus providing a data stream generates a latency time stamp (LTS) which contains an absolute time indicating a creation time of said data stream and an accumulated delay time which is updated by each apparatus processing said data stream, wherein said latency time stamp (LTS) of said data stream is evaluated by a borderline output apparatus of said network which synchronizes said data stream.
摘要:
A method and circuit is provided for detecting and correcting errors in an array of content addressable memory (CAM) cells. The array includes wordlines, searchlines, bitlines, and matchlines for reading from, writing to, and searching CAM cells in the array. The method includes the following steps: a row parity bit corresponding to a parity of a first plurality of bits stored along a row of CAM cells is stored; a column parity bit corresponding to the parity of a second plurality of bits stored along a column of CAM cells is stored; a parity of the first plurality of bits is read and generated and the generated parity is compared to the stored row parity bit, if the generated and stored parity bits do not match, columns of the array are cycled through; a parity of the second plurality of bits is read and generated and the generated parity is compared to the stored column parity bit until a mismatch is indicated; and, a bit located at an intersection of the mismatched row and column is inverted if the mismatch is indicated.
摘要:
A circuit for providing an output voltage for a DRAM word line which can be used to drive memory word lines which can be as high as 2Vdd. Transistors in a boosting circuit are fully switched, eliminating reduction of the boosting voltage by Vtn through the transistors. The boosting capacitors are charge by Vdd. A regulator detects conduction current of a replica of a memory cell access transistor, shutting off the boosting circuit clock oscillator when the correct voltage to operate the access transistor has been reached.
摘要:
A circuit for providing an output voltage for a DRAM word line which can be used to drive memory word lines which can be as high as 2Vdd. Transistors in a boosting circuit are fully switched, eliminating reduction of the boosting voltage by Vtn through the transistors. The boosting capacitors are charge by Vdd. A regulator detects conduction current of a replica of a memory cell access transistor, shutting off the boosting circuit clock oscillator when the correct voltage to operate the access transistor has been reached.
摘要:
A CAM cell comprises a pair of SRAM cells, each of which comprise a pair of cross coupled inverters for storing a data value and a pair of access devices for accessing a complementary pair of bit lines. The CAM cell ether comprises a pair of compare circuits, each for comparing said data value stored in one of said SRAM cells with a search data value provided on a corresponding search line. The CAM cell has an equivalent number of n-channel and p-channel devices. The CAM cell uses p-channel transistors as access transistors to the SRAM cells in order to improve the efficiency of the layout of the cell array. The implementation ensures a balanced number of p-channel and n-channel devices per cell while still providing excellent functional characteristics.
摘要:
Systems and methods for positioning an output element (102, 602) within a three-dimensional environment (104, 604) are described. Movement data relating to movement of a mobile device (120, 620) is obtained (206, 262). The movement data is mapped (208, 264) to movement of a simulated output element (503) in a virtual environment (505), which simulates the three-dimensional environment. The movement of the simulated output element is associated with movement of an output element within the three-dimensional environment so as to control the position of the output element within the three-dimensional environment. In one exemplary embodiment an output element (102) being a sound source is positioned in a three-dimensional, immersive sound environment (104). In another exemplary embodiment a focal point of a light beam (602) is positioned in a three-dimensional theatrical environment (604). The described systems and methods enable a user to control the real-time and/or recorded position and/or movement of an output element by manipulating the orientation of a mobile device (120, 620).
摘要:
The present invention relates to a digital multimedia network of apparatuses each comprising a control device, wherein a device parameter of an apparatus is controlled by sending a command message (CMD) to said control device of said apparatus containing a tree-structured hierarchical parameter address (HPA) which consists of parameter grouping identifiers each corresponding to a hierarchy level of a predetermined tree-structured parameter hierarchy used for addressing device parameters throughout said digital multimedia network.
摘要:
A method and circuit is provided for detecting and correcting errors in an array of content addressable memory (CAM) cells. The array includes wordlines, searchlines, bitlines, and matchlines for reading from, writing to, and searching CAM cells in the array. The method includes the following steps: a row parity bit corresponding to a parity of a first plurality of bits stored along a row of CAM cells is stored; a column parity bit corresponding to the parity of a second plurality of bits stored along a column of CAM cells is stored; a parity of the first plurality of bits is read and generated and the generated parity is compared to the stored row parity bit; if the generated and stored parity bits do not match, columns of the array are cycled through; a parity of the second plurality of bits is read and generated and the generated parity is compared to the stored column parity bit until a mismatch is indicated; and, a bit located at an intersection of the mismatched row and column is inverted if the mismatch is indicated.