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公开(公告)号:US20160380132A1
公开(公告)日:2016-12-29
申请号:US14750821
申请日:2015-06-25
申请人: Richard Hamilton Sewell , David Fredric Joel Kavulak , Lewis Abra , Thomas P. Pass , Taeseok Kim , Matthieu Moors , Benjamin Ian Hsia , Gabriel Harley
发明人: Richard Hamilton Sewell , David Fredric Joel Kavulak , Lewis Abra , Thomas P. Pass , Taeseok Kim , Matthieu Moors , Benjamin Ian Hsia , Gabriel Harley
IPC分类号: H01L31/0224 , H01L31/0368 , H01L31/05 , H01L31/0687
摘要: Approaches for fabricating one-dimensional metallization for solar cells, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a back surface and an opposing light-receiving surface. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the back surface of the substrate and parallel along a first direction to form a one-dimensional layout of emitter regions for the solar cell. A conductive contact structure is disposed on the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal lines corresponding to the plurality of alternating N-type and P-type semiconductor regions. The plurality of metal lines is parallel along the first direction to form a one-dimensional layout of a metallization layer for the solar cell.
摘要翻译: 描述了制造用于太阳能电池的一维金属化的方法以及所得到的太阳能电池。 在一个示例中,太阳能电池包括具有背面和相对的光接收表面的基板。 多个交替的N型和P型半导体区域设置在基板的背面中或上方并且沿着第一方向平行,以形成用于太阳能电池的发射极区域的一维布局。 导电接触结构设置在多个交替的N型和P型半导体区域上。 导电接触结构包括对应于多个交替的N型和P型半导体区的多个金属线。 多个金属线沿着第一方向平行以形成用于太阳能电池的金属化层的一维布局。
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2.
公开(公告)号:US20160380127A1
公开(公告)日:2016-12-29
申请号:US14752828
申请日:2015-06-26
IPC分类号: H01L31/0224 , H01L31/0216 , H01L31/18
CPC分类号: H01L31/022441 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要: Approaches for fabricating foil-based metallization of solar cells based on a leave-in etch mask, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a back surface and an opposing light-receiving surface. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the back surface of the substrate. A conductive contact structure is disposed on the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes metal foil portions in alignment with corresponding ones of the alternating N-type and P-type semiconductor regions. A patterned wet etchant-resistant polymer layer is disposed on the conductive contact structure. Portions of the patterned wet etchant-resistant polymer layer are disposed on and in alignment with the metal foil portions.
摘要翻译: 描述了基于留下蚀刻掩模和所得到的太阳能电池来制造基于箔的金属化太阳能电池的方法。 在一个示例中,太阳能电池包括具有背面和相对的光接收表面的基板。 多个交替的N型和P型半导体区域设置在衬底的背面中或上方。 导电接触结构设置在多个交替的N型和P型半导体区域上。 导电接触结构包括与交替的N型和P型半导体区域中的对应的金属箔部分对准的金属箔部分。 图案化的耐湿蚀刻剂聚合物层设置在导电接触结构上。 图案化的耐湿蚀刻剂聚合物层的一部分设置在金属箔部分上并与之对齐。
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公开(公告)号:US20170179308A1
公开(公告)日:2017-06-22
申请号:US15453612
申请日:2017-03-08
申请人: Robert Woehl , Richard Hamilton Sewell , Mohamed A. Elbandrawy , Taeseok Kim , Thomas P. Pass , Benjamin Ian Hsia , David Fredric Joel Kavulak , Nils-Peter Harder
发明人: Robert Woehl , Richard Hamilton Sewell , Mohamed A. Elbandrawy , Taeseok Kim , Thomas P. Pass , Benjamin Ian Hsia , David Fredric Joel Kavulak , Nils-Peter Harder
IPC分类号: H01L31/02 , H01L31/0224
CPC分类号: H01L31/022433 , H01L31/022441 , H01L31/0516 , H01L31/18 , Y02E10/50
摘要: Laser foil trim approaches for foil-based metallization of solar cells, and the resulting solar cells, are described. For example, a method of fabricating a solar cell includes attaching a metal foil sheet to a surface of a wafer to provide a unified pairing of the metal foil sheet and the wafer, wherein the wafer has a perimeter and the metal foil sheet has a portion overhanging the perimeter. The method also includes laser scribing the metal foil sheet along the perimeter of the wafer using a laser beam that overlaps the metal foil sheet outside of the perimeter of the wafer and at the same time overlaps a portion of the unified pairing of the metal foil sheet and the wafer inside the perimeter of the wafer to remove the portion of the metal foil sheet overhanging the perimeter and to provide a metal foil piece coupled to the surface of the wafer.
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公开(公告)号:US20170125612A1
公开(公告)日:2017-05-04
申请号:US14927265
申请日:2015-10-29
申请人: Robert Woehl , Richard Hamilton Sewell , Mohamed A. Elbandrawy , Taeseok Kim , Thomas P. Pass , Benjamin Ian Hsia , David Fredric Joel Kavulak , Nils-Peter Harder
发明人: Robert Woehl , Richard Hamilton Sewell , Mohamed A. Elbandrawy , Taeseok Kim , Thomas P. Pass , Benjamin Ian Hsia , David Fredric Joel Kavulak , Nils-Peter Harder
IPC分类号: H01L31/02
CPC分类号: H01L31/022433 , H01L31/022441 , H01L31/0516 , H01L31/18 , Y02E10/50
摘要: Laser foil trim approaches for foil-based metallization of solar cells, and the resulting solar cells, are described. For example, a method of fabricating a solar cell includes attaching a metal foil sheet to a surface of a wafer to provide a unified pairing of the metal foil sheet and the wafer, wherein the wafer has a perimeter and the metal foil sheet has a portion overhanging the perimeter. The method also includes laser scribing the metal foil sheet along the perimeter of the wafer using a laser beam that overlaps the metal foil sheet outside of the perimeter of the wafer and at the same time overlaps a portion of the unified pairing of the metal foil sheet and the wafer inside the perimeter of the wafer to remove the portion of the metal foil sheet overhanging the perimeter and to provide a metal foil piece coupled to the surface of the wafer.
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公开(公告)号:US09620655B1
公开(公告)日:2017-04-11
申请号:US14927265
申请日:2015-10-29
申请人: Robert Woehl , Richard Hamilton Sewell , Mohamed A. Elbandrawy , Taeseok Kim , Thomas P. Pass , Benjamin Ian Hsia , David Fredric Joel Kavulak , Nils-Peter Harder
发明人: Robert Woehl , Richard Hamilton Sewell , Mohamed A. Elbandrawy , Taeseok Kim , Thomas P. Pass , Benjamin Ian Hsia , David Fredric Joel Kavulak , Nils-Peter Harder
IPC分类号: H01L31/00 , H01L31/02 , H01L31/18 , H01L31/0224 , H01L31/05
CPC分类号: H01L31/022433 , H01L31/022441 , H01L31/0516 , H01L31/18 , Y02E10/50
摘要: Laser foil trim approaches for foil-based metallization of solar cells, and the resulting solar cells, are described. For example, a method of fabricating a solar cell includes attaching a metal foil sheet to a surface of a wafer to provide a unified pairing of the metal foil sheet and the wafer, wherein the wafer has a perimeter and the metal foil sheet has a portion overhanging the perimeter. The method also includes laser scribing the metal foil sheet along the perimeter of the wafer using a laser beam that overlaps the metal foil sheet outside of the perimeter of the wafer and at the same time overlaps a portion of the unified pairing of the metal foil sheet and the wafer inside the perimeter of the wafer to remove the portion of the metal foil sheet overhanging the perimeter and to provide a metal foil piece coupled to the surface of the wafer.
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公开(公告)号:US09231129B2
公开(公告)日:2016-01-05
申请号:US14229716
申请日:2014-03-28
申请人: Gabriel Harley , Taeseok Kim , Richard Hamilton Sewell , Michael Morse , David D. Smith , Matthieu Moors , Jens-Dirk Moschner
发明人: Gabriel Harley , Taeseok Kim , Richard Hamilton Sewell , Michael Morse , David D. Smith , Matthieu Moors , Jens-Dirk Moschner
IPC分类号: H01L21/00 , H01L31/0224 , H01L31/0687 , H01L31/02
CPC分类号: H01L31/02245 , H01L31/022441 , H01L31/02363 , H01L31/028 , H01L31/0475 , H01L31/0512 , H01L31/0516 , H01L31/0682 , H01L31/0745 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要: Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.
摘要翻译: 描述了用于太阳能电池和所得太阳能电池的箔基金属化的方法。 在一个示例中,太阳能电池包括基板。 多个交替的N型和P型半导体区域设置在衬底中或上方。 导电接触结构设置在多个交替的N型和P型半导体区域的上方。 导电接触结构包括多个金属种子材料区域,其提供设置在每个交替的N型和P型半导体区域上的金属种子材料区域。 金属箔设置在多个金属种子材料区域上,金属箔具有阳极化部分,隔离与交替的N型和P型半导体区对应的金属箔的金属区域。
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公开(公告)号:US20170222068A1
公开(公告)日:2017-08-03
申请号:US15485840
申请日:2017-04-12
申请人: Gabriel Harley , Taeseok Kim , Richard Hamilton Sewell , Michael Morse , David D. Smith , Matthieu Moors , Jens-Dirk Moschner
发明人: Gabriel Harley , Taeseok Kim , Richard Hamilton Sewell , Michael Morse , David D. Smith , Matthieu Moors , Jens-Dirk Moschner
IPC分类号: H01L31/0224 , H01L31/0475 , H01L31/028 , H01L31/05
CPC分类号: H01L31/02245 , H01L31/022441 , H01L31/02363 , H01L31/028 , H01L31/0475 , H01L31/0512 , H01L31/0516 , H01L31/0682 , H01L31/0745 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要: Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.
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公开(公告)号:US09627566B2
公开(公告)日:2017-04-18
申请号:US14954030
申请日:2015-11-30
申请人: Gabriel Harley , Taeseok Kim , Richard Hamilton Sewell , Michael Morse , David D. Smith , Matthieu Moors , Jens-Dirk Moschner
发明人: Gabriel Harley , Taeseok Kim , Richard Hamilton Sewell , Michael Morse , David D. Smith , Matthieu Moors , Jens-Dirk Moschner
IPC分类号: H01L31/0224 , H01L31/028 , H01L31/0475 , H01L31/05 , H01L31/0236 , H01L31/0745
CPC分类号: H01L31/02245 , H01L31/022441 , H01L31/02363 , H01L31/028 , H01L31/0475 , H01L31/0512 , H01L31/0516 , H01L31/0682 , H01L31/0745 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要: Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.
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公开(公告)号:US20160079450A1
公开(公告)日:2016-03-17
申请号:US14954030
申请日:2015-11-30
申请人: Gabriel Harley , Taeseok Kim , Richard Hamilton Sewell , Michael Morse , David D. Smith , Matthieu Moors , Jens-Dirk Moschner
发明人: Gabriel Harley , Taeseok Kim , Richard Hamilton Sewell , Michael Morse , David D. Smith , Matthieu Moors , Jens-Dirk Moschner
IPC分类号: H01L31/0224 , H01L31/0475 , H01L31/028 , H01L31/05
CPC分类号: H01L31/02245 , H01L31/022441 , H01L31/02363 , H01L31/028 , H01L31/0475 , H01L31/0512 , H01L31/0516 , H01L31/0682 , H01L31/0745 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要: Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.
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公开(公告)号:US20150280021A1
公开(公告)日:2015-10-01
申请号:US14229716
申请日:2014-03-28
申请人: Gabriel Harley , Taeseok Kim , Richard Hamilton Sewell , Michael Morse , David D. Smith , Matthieu Moors , Jens-Dirk Moschner
发明人: Gabriel Harley , Taeseok Kim , Richard Hamilton Sewell , Michael Morse , David D. Smith , Matthieu Moors , Jens-Dirk Moschner
IPC分类号: H01L31/0224 , H01L31/02 , H01L31/0687
CPC分类号: H01L31/02245 , H01L31/022441 , H01L31/02363 , H01L31/028 , H01L31/0475 , H01L31/0512 , H01L31/0516 , H01L31/0682 , H01L31/0745 , Y02E10/50 , Y02E10/547 , Y02P70/521
摘要: Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.
摘要翻译: 描述了用于太阳能电池和所得太阳能电池的箔基金属化的方法。 在一个示例中,太阳能电池包括基板。 多个交替的N型和P型半导体区域设置在衬底中或上方。 导电接触结构设置在多个交替的N型和P型半导体区域的上方。 导电接触结构包括多个金属种子材料区域,其提供设置在每个交替的N型和P型半导体区域上的金属种子材料区域。 金属箔设置在多个金属种子材料区域上,金属箔具有阳极化部分,隔离与交替的N型和P型半导体区对应的金属箔的金属区域。
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