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1.发明授权公开(公告)号：US06579149B2
公开(公告)日：2003-06-17
申请号：US09777548
申请日：2001-02-06
申请人： Richard J. Lebel , Frederic Maurer , Rock Nadeau , Paul H. Smith, Jr. , Hemantha K. Wickramasinghe , Theodore G. van Kessel
发明人： Richard J. Lebel , Frederic Maurer , Rock Nadeau , Paul H. Smith, Jr. , Hemantha K. Wickramasinghe , Theodore G. van Kessel
IPC分类号： B24B4900
CPC分类号： H01L21/681
摘要： A device and method for providing precision alignment and support for an optical film measurement probe in the wafer rinse tank of a CMP polish tool. The device includes of a probe carrier, and spring loaded support guides attached to a support ring that supports and locates the mechanism in the rinse tank of the CMP tool. The probe carrier has multiple beveled bearing pads (three or more) that contact the rim of the rotating wafer chuck. Pressure from the chuck against these pads forces the probe carrier to maintain a fixed distance and orientation relative to the wafer while allowing the smooth rotation and motion of the wafer and chuck. Further, an integrated the wafer spray nozzles can be attached to the probe carrier that is located so as to minimize interference between wafer spraying and the probe carrier.
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2.发明授权公开(公告)号：US06319093B1
公开(公告)日：2001-11-20
申请号：US09777380
申请日：2001-02-06
申请人： Richard J. Lebel , Frederic Maurer , Rock Nadeau , Paul H. Smith, Jr. , Hemantha K. Wickramasinghe , Theodore G. van Kessel
发明人： Richard J. Lebel , Frederic Maurer , Rock Nadeau , Paul H. Smith, Jr. , Hemantha K. Wickramasinghe , Theodore G. van Kessel
IPC分类号： B24B3700
CPC分类号： B24B37/345 , B24B37/013 , B24B49/12 , H01L21/67253
摘要： A system and method that integrates film thickness measurements with a chemical-mechanical polishing (CMP) spin-dry tool. By doing so, each wafer can be measured as it comes out of the previous CMP process. Thickness measurement feedback is provided, which controls processing of the wafer and also monitor operational status of a CMP polishing unit prior to completion of the wafer being polished, resulting in significant cost and cycle time reduction through the elimination of tool infrastructure and wafer handling by assuring proper tolerances of the CMP polishing unit are maintained.
摘要翻译： 将薄膜厚度测量与化学机械抛光（CMP）旋转干燥工具集成的系统和方法。 通过这样做，可以测量每个晶片，因为它从先前的CMP工艺出来。 提供厚度测量反馈，其控制晶片的处理并且还可以在抛光晶片完成之前监测CMP抛光单元的操作状态，从而通过消除工具基础设施和晶片处理来确保显着的成本和循环时间减少 保持CMP抛光单元的适当公差。
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公开(公告)号：US06334807B1
公开(公告)日：2002-01-01
申请号：US09302737
申请日：1999-04-30
申请人： Richard J. Lebel , Rock Nadeau , Martin P. O'Boyle , Paul H. Smith, Jr. , Theodore G. van Kessel , Hemantha K. Wickramasinghe
发明人： Richard J. Lebel , Rock Nadeau , Martin P. O'Boyle , Paul H. Smith, Jr. , Theodore G. van Kessel , Hemantha K. Wickramasinghe
IPC分类号： B24B4900
CPC分类号： B24B37/013 , B24B49/04 , B24B49/12
摘要： A structure and method for polishing a device include oscillating a carrier over an abrasive surface (the carrier bringing a polished surface of the device into contact with the abrasive surface, the oscillating allowing a portion of the polished surface to periodically oscillate off the abrasive surface), optically determining a reflective measure of a plurality of locations of the polished surface as the portion of the device oscillates off the abrasive surface and calculating depths of the locations of the polished surface based of the reflective measure.
摘要翻译： 用于抛光装置的结构和方法包括将载体摆放在研磨表面上（载体使装置的抛光表面与研磨表面接触，使得抛光表面的一部分周期性地从磨料表面摆动） 光学确定抛光表面的多个位置的反射测量，因为该装置的一部分基于该研磨表面摆动并根据反射测量计算抛光表面位置的深度。
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4.发明申请DEVICE AND METHOD FOR GENERATING AN X-RAY POINT SOURCE BY GEOMETRIC CONFINEMENT 审中-公开通过几何确定产生X射线点源的装置和方法公开(公告)号：US20080258068A1
公开(公告)日：2008-10-23
申请号：US12165500
申请日：2008-06-30
CPC分类号： H01J35/08 , G21K7/00 , H01J2235/083 , H01J2235/086
摘要： A device for generating an x-ray point source includes a target, and an electron source for producing electrons which intersect with the target to generate an x-ray point source having a size which is confined by a dimension of the target.
摘要翻译： 用于产生x射线点源的装置包括靶，以及用于产生与靶相交的电子的电子源，以产生具有被靶的尺寸限制的尺寸的x射线点源。
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5.发明授权Device and method for generating an x-ray point source by geometric confinement 失效通过几何约束生成X射线点源的装置和方法公开(公告)号：US07469039B2
公开(公告)日：2008-12-23
申请号：US11497252
申请日：2006-08-02
IPC分类号： H01J35/00
CPC分类号： H01J35/08 , G21K7/00 , H01J2235/083 , H01J2235/086
摘要： A device for generating an x-ray point source includes a target, and an electron source for producing electrons which intersect with the target to generate an x-ray point source having a size which is confined by a dimension of the target.
摘要翻译： 用于产生x射线点源的装置包括靶，以及用于产生与靶相交的电子的电子源，以产生具有被靶的尺寸限制的尺寸的x射线点源。
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6.发明授权Device and method for generating an x-ray point source by geometric confinement 有权通过几何约束生成X射线点源的装置和方法公开(公告)号：US07130379B2
公开(公告)日：2006-10-31
申请号：US10445856
申请日：2003-05-28
IPC分类号： H01J35/08
CPC分类号： H01J35/08 , G21K7/00 , H01J2235/083 , H01J2235/086
摘要： A device for generating an x-ray point source includes a target, and an electron source for producing electrons which intersect with the target to generate an x-ray point source having a size which is confined by a dimension of the target.
摘要翻译： 用于产生x射线点源的装置包括靶，以及用于产生与靶相交的电子的电子源，以产生具有被靶的尺寸限制的尺寸的x射线点源。
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公开(公告)号：US08421194B2
公开(公告)日：2013-04-16
申请号：US13006403
申请日：2011-01-13
IPC分类号： H01L29/06
CPC分类号： H01L21/0337
摘要： A trench structure and an integrated circuit comprising sub-lithographic trench structures in a substrate. In one embodiment the trench structure is created by forming sets of trenches with a lithographic mask and filling the sets of trenches with sets of step spacer blocks comprising two alternating spacer materials which are separately removable from each other. In one embodiment, the trench structures formed are one-nth the thickness of the lithographic mask's feature size. The size of the trench structures being dependent on the thickness and number of spacer material layers used to form the set of step spacer blocks. The number of spacer material layers being n/2 and the thickness of each spacer material layer being one-nth of the lithographic mask's feature size.
摘要翻译： 沟槽结构和集成电路，其包括衬底中的次光刻沟槽结构。 在一个实施例中，沟槽结构是通过用光刻掩膜形成一组沟槽而形成的，并且用一组间隔块块填充该组沟槽，该组间隔块包括彼此分离地可拆卸的两个交替间隔物材料。 在一个实施例中，形成的沟槽结构是光刻掩模的特征尺寸的厚度的十分之一。 沟槽结构的尺寸取决于用于形成一组步进间隔块的间隔材料层的厚度和数量。 间隔材料层的数量为n / 2，每个间隔材料层的厚度为光刻掩模的特征尺寸的十分之一。
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公开(公告)号：US20110108960A1
公开(公告)日：2011-05-12
申请号：US13006403
申请日：2011-01-13
CPC分类号： H01L21/0337
摘要： A trench structure and an integrated circuit comprising sub-lithographic trench structures in a substrate. In one embodiment the trench structure is created by forming sets of trenches with a lithographic mask and filling the sets of trenches with sets of step spacer blocks comprising two alternating spacer materials which are separately removable from each other. In one embodiment, the trench structures formed are one-nth the thickness of the lithographic mask's feature size. The size of the trench structures being dependent on the thickness and number of spacer material layers used to form the set of step spacer blocks. The number of spacer material layers being n/2 and the thickness of each spacer material layer being one-nth of the lithographic mask's feature size.
摘要翻译： 沟槽结构和集成电路，其包括衬底中的次光刻沟槽结构。 在一个实施例中，沟槽结构是通过用光刻掩膜形成一组沟槽而形成的，并且用一组间隔块块填充该组沟槽，该组间隔块包括彼此分离地可拆卸的两个交替间隔物材料。 在一个实施例中，形成的沟槽结构是光刻掩模的特征尺寸的厚度的十分之一。 沟槽结构的尺寸取决于用于形成一组步进间隔块的间隔材料层的厚度和数量。 间隔材料层的数量为n / 2，每个间隔材料层的厚度为光刻掩模的特征尺寸的十分之一。
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公开(公告)号：US07126885B2
公开(公告)日：2006-10-24
申请号：US10609213
申请日：2003-06-27
CPC分类号： G11B5/127 , B82Y10/00 , B82Y25/00 , G11B5/656 , G11B5/7325 , G11B5/74 , G11B5/743 , G11B5/82 , G11B5/855 , G11B9/14 , G11B9/1409 , G11B9/1472 , G11B2005/0002 , G11B2005/0005 , G11B2005/0021
摘要： A method for patterning a recording medium selectively thermally couples a recording medium and a heat source to alter a chemical composition of the recording medium. An apparatus for patterning a recording medium has a heat source for generating and directing an incident thermal wave to a recording medium so as to alter a chemical composition of the recording medium, and a controller for coordinating a mutual position of the incident thermal wave and the recording medium for inducing a direct thermal coupling between the recording medium and the heat source.
摘要翻译： 图案化记录介质的方法选择性地热连接记录介质和热源以改变记录介质的化学成分。 用于图案化记录介质的装置具有用于产生并引导入射热波到记录介质以便改变记录介质的化学成分的热源，以及用于协调入射热波的相互位置和 用于引起记录介质和热源之间的直接热耦合的记录介质。
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公开(公告)号：US06548843B2
公开(公告)日：2003-04-15
申请号：US09190131
申请日：1998-11-12
IPC分类号： H01L2976
CPC分类号： G11C11/22 , B82Y10/00 , H01L51/0093
摘要： A memory device including at least one pair of spaced apart conductors and a ferroelectric material between the pair of conductors. The pair of conductors is spaced apart a distance sufficient to permit a tunneling current therebetween.
摘要翻译： 存储器件，包括至少一对间隔开的导体和在该对导体之间的铁电材料。 一对导体间隔开足以允许它们之间的隧穿电流的距离。
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