In-situ pad conditioning process for CMP
    9.
    发明授权
    In-situ pad conditioning process for CMP 有权
    CMP原位垫调理工艺

    公开(公告)号:US6022266A

    公开(公告)日:2000-02-08

    申请号:US169382

    申请日:1998-10-09

    CPC分类号: B24B53/017 B24B37/042

    摘要: An improved method of in-situ conditioning of a polishing pad for use with a stationary pad conditioner during chemical mechanical polishing is described. A polishing table having a polishing pad on its surface is rotated in a first direction during polishing of a semiconductor wafer. A polishing pad conditioner is adjustably attached to the rotating polishing table such that the conditioner is stationary in relation to the rotating polishing table. The conditioner has a roughened surface which is in contact with the polishing pad providing in-situ conditioning during polishing of a semiconductor wafer. After polishing of the semiconductor wafer, the polishing table is rotated in a second direction while the conditioner is still in contact with polishing pad. Rotating the polishing pad in a second direction dislodges the polishing debris clogging the roughened surface of the conditioner and redistributes CMP slurry. The roughened surface of the pad conditioner is refreshed allowing more effective conditioning of the polishing pad. Pad life is prolonged, polishing is stabilized, and the polish cycle time is reduced.

    摘要翻译: 描述了在化学机械抛光期间用于与固定衬垫调节器一起使用的抛光垫的现场调节的改进方法。 在半导体晶片的研磨过程中,在其表面上具有抛光垫的抛光台在第一方向上旋转。 抛光垫调节器可调节地附接到旋转的抛光台,使得调节器相对于旋转的抛光台静止。 调理剂具有与抛光垫接触的粗糙表面,在抛光半导体晶片期间提供原位调节。 在抛光半导体晶片之后,抛光台在第二方向旋转,同时调节器仍然与抛光垫接触。 在第二个方向上旋转抛光垫将抛光碎屑堵塞在调理剂的粗糙表面上并重新分布CMP浆料。 擦洗垫调节剂的粗糙表面被刷新,从而可以更有效地调理抛光垫。 焊垫寿命延长,抛光稳定,抛光周期缩短。