公开(公告)号：US07169253B2

公开(公告)日：2007-01-30

申请号：US10909764

申请日：2004-08-02

申请人： Gim-Syang Chen ,  Ismail Kashkoush ,  Richard Novak

发明人： Gim-Syang Chen ,  Ismail Kashkoush ,  Richard Novak

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： G03F7/423 ,  G03F7/428

摘要： A method and system for cleaning and/or stripping photoresist from photomasks used in integrated circuit manufacturing comprising a process and means of introducing a mixture of sulfuric acid and ozone (or a mixture of sulfuric acid and hydrogen peroxide) to the surface of a photomask while applying megasonic energy. The invention also comprises method and system comprising a process and means of introducing ozonated deionized water and/or a low temperature dilute aqueous solution (dAPM) to the surface of photomasks while applying megasonic energy. The process and apparatus also remove post plasma ashed residues and other contaminants from photomask surfaces.

摘要翻译： 一种用于在用于集成电路制造的光掩模中清洁和/或剥离光致抗蚀剂的方法和系统，包括将硫酸和臭氧（或硫酸和过氧化氢的混合物）的混合物引入光掩模的表面的方法和装置，同时 应用兆声波能量。 本发明还包括方法和系统，其包括将臭氧化去离子水和/或低温稀释水溶液（dAPM）引入光掩模表面同时施加兆声波能量的方法和装置。 该方法和设备还从光掩模表面除去后等离子体灰浆残留物和其它污染物。

公开(公告)号：US08741066B2

公开(公告)日：2014-06-03

申请号：US12070620

申请日：2008-02-19

申请人： Ismail Kashkoush ,  Thomas Nolan ,  Dennis Nemeth ,  Richard Novak

发明人： Ismail Kashkoush ,  Thomas Nolan ,  Dennis Nemeth ,  Richard Novak

IPC分类号： B08B3/12 ,  B08B3/08

CPC分类号： H01L21/02052

摘要： A process/method for cleaning wafers that eliminates and/or reduces pitting caused by standard clean 1 by performing a pre-etch and then passivating the wafer surface prior to the application of the standard clean 1. The process/method may be especially useful for advanced front end of line post-CPM cleaning. In one embodiment, the invention is a method of processing a substrate comprising: a) providing at least one substrate; b) etching a surface of the substrate by applying an etching solution; c) passivating the etched surface of the substrate by applying ozone; and d) cleaning the passivated surface of the substrate by applying an aqueous solution comprising ammonium hydroxide and hydrogen peroxide.

摘要翻译： 用于清洁晶片的方法/方法，其通过在施加标准清洁剂1之前执行预蚀刻然后钝化晶片表面来消除和/或减少由标准清洁1引起的点蚀。该方法/方法可能特别适用于 高级前端线后CPM清洗。 在一个实施例中，本发明是一种处理衬底的方法，包括：a）提供至少一个衬底; b）通过施加蚀刻溶液蚀刻所述基板的表面; c）通过施加臭氧钝化衬底的蚀刻表面; 以及d）通过施加包含氢氧化铵和过氧化氢的水溶液来清洁基材的钝化表面。

公开(公告)号：US20080035609A1

公开(公告)日：2008-02-14

申请号：US10585229

申请日：2004-12-30

申请人： Ismail Kashkoush ,  Gim-Syang Chen ,  Richard Novak

发明人： Ismail Kashkoush ,  Gim-Syang Chen ,  Richard Novak

IPC分类号： H01L21/302 ,  C23F1/02

CPC分类号： H01L21/31111

摘要： A system (FIG. 5) and methods for selectively etching silicon nitride in the presence of silicon oxide that provide high selectivity while stabilizing silicon oxide etch rates. The invention comprises a processing chamber (10), dispense lines (20, 21, 22), feed lines (30, 31, 32), a recirculation line (40), a process controller (200), a concentration sensor (50), a particle counter (55), and a bleed line (90). The invention dynamically controls the concentration ratio of the components of the etchant being used and/or dynamically controls the particle count within the etchant during the processing of the at least one substrate. As a result etchant bath life is increased and etching process parameters are more tightly controlled.

摘要翻译： 一种系统（图5）和用于在存在氧化硅的情况下选择性地蚀刻氮化硅的方法，其在稳定氧化硅蚀刻速率的同时提供高选择性。 本发明包括处理室（10），分配管线（20,21,22），进料管线（30,31,32），再循环管线（40），过程控制器（200），浓度传感器（50） ，粒子计数器（55）和渗血线（90）。 本发明在处理所述至少一个基板期间动态地控制所使用的蚀刻剂的组分的浓度比和/或动态地控制蚀刻剂内的颗粒计数。 因此，蚀刻液浴寿命增加，蚀刻工艺参数得到更严格的控制。

公开(公告)号：US06928750B2

公开(公告)日：2005-08-16

申请号：US10951009

申请日：2004-09-27

申请人： Ismail Kashkoush ,  Richard Novak ,  Larry Myland

发明人： Ismail Kashkoush ,  Richard Novak ,  Larry Myland

IPC分类号： B01D61/36 ,  B01D71/32 ,  B01D71/34 ,  B01D71/36 ,  B01F3/02 ,  B01F3/04 ,  F26B21/00

CPC分类号： B01F3/022 ,  B01F3/04021

摘要： A system, method, and apparatus for supplying a gas-liquid vapor to a process tank for performing semiconductor manufacturing. In one aspect, the invention is a method of supplying a gas-liquid vapor to a process tank comprising: supplying a gas stream through at least one hydrophobic tube; exposing the outside surface of the hydrophobic tube to a liquid so that a vapor of the liquid permeates the hydrophobic tube and enters the gas stream, forming a gas-liquid vapor inside the tube; and transporting the gas-liquid vapor to the process tank. In another aspect, the invention is an apparatus for supplying a gas-liquid vapor to a process tank comprising: at least one hydrophobic tube adapted to carry a gas; and a housing forming a chamber that surrounds the tube, the chamber adapted to receive a liquid that can permeate the tube, forming a gas-liquid vapor. In yet another aspect, the invention is a system for supplying a gas-liquid vapor to a process tank comprising: the apparatus of the present invention; gas supply means adapted to supply the gas to the tube; liquid supply means adapted to supply the liquid to the chamber; and gas-liquid transport means adapted to carry the gas-fluid vapor from the apparatus to the process tank.

摘要翻译： 一种用于将气液蒸气供给到用于进行半导体制造的处理罐的系统，方法和装置。 一方面，本发明是一种将气液蒸气供应到处理罐的方法，包括：通过至少一个疏水管供应气流; 将疏水管的外表面暴露于液体，使得液体的蒸气渗透疏水管并进入气流，在管内形成气液蒸汽; 并将气液蒸气输送到处理罐。 在另一方面，本发明是一种用于将气液蒸气供应到处理罐的装置，包括：至少一个适于承载气体的疏水管; 以及壳体，其形成围绕所述管的室，所述室适于接收可渗透到所述管的液体，形成气液蒸气。 在另一方面，本发明是一种用于将气液蒸气供应到处理罐的系统，包括：本发明的装置; 适于将气体供应到管的气体供应装置; 适于将液体供应到所述室的液体供应装置; 以及适于将气体 - 液体蒸气从设备运送到处理罐的气液输送装置。

公开(公告)号：US20110306210A1

公开(公告)日：2011-12-15

申请号：US12070620

申请日：2008-02-19

申请人： Ismail Kashkoush ,  Thomas Nolan ,  Dennis Nemeth ,  Richard Novak

发明人： Ismail Kashkoush ,  Thomas Nolan ,  Dennis Nemeth ,  Richard Novak

IPC分类号： H01L21/306 ,  H01L21/304

CPC分类号： H01L21/02052

摘要： A process/method for cleaning wafers that eliminates and/or reduces pitting caused by standard clean 1 by performing a pre-etch and then passivating the wafer surface prior to the application of the standard clean 1. The process/method may be especially useful for advanced front end of line post-CPM cleaning. In one embodiment, the invention is a method of processing a substrate comprising: a) providing at least one substrate; b) etching a surface of the substrate by applying an etching solution; c) passivating the etched surface of the substrate by applying ozone; and d) cleaning the passivated surface of the substrate by applying an aqueous solution comprising ammonium hydroxide and hydrogen peroxide.

摘要翻译： 用于清洁晶片的方法/方法，其通过在施加标准清洁剂1之前执行预蚀刻然后钝化晶片表面来消除和/或减少由标准清洁1引起的点蚀。该方法/方法可能特别适用于 高级前端线后CPM清洗。 在一个实施例中，本发明是一种处理衬底的方法，包括：a）提供至少一个衬底; b）通过施加蚀刻溶液蚀刻所述基板的表面; c）通过施加臭氧钝化衬底的蚀刻表面; 以及d）通过施加包含氢氧化铵和过氧化氢的水溶液来清洁基材的钝化表面。

公开(公告)号：US20070123052A1

公开(公告)日：2007-05-31

申请号：US11649535

申请日：2007-01-04

申请人： Ismail Kashkoush ,  Gim-Syang Chen ,  Richard Novak

发明人： Ismail Kashkoush ,  Gim-Syang Chen ,  Richard Novak

IPC分类号： B08B6/00 ,  B44C1/22 ,  H01L21/302 ,  C25F1/00 ,  H01L21/461 ,  C03C15/00

CPC分类号： G03F7/423 ,  G03F7/428

摘要： A method and system for cleaning and/or stripping photoresist from photomasks used in integrated circuit manufacturing comprising a process and means of introducing a mixture of sulfuric acid and ozone (or a mixture of sulfuric acid and hydrogen peroxide) to the surface of a photomask while applying megasonic energy. The invention also comprises method and system comprising a process and means of introducing ozonated deionized water and/or a low temperature dilute aqueous solution (dAPM) to the surface of photomasks while applying megasonic energy. The process and apparatus also remove post plasma ashed residues and other contaminants from photomask surfaces.

摘要翻译： 一种用于在用于集成电路制造的光掩模中清洁和/或剥离光致抗蚀剂的方法和系统，包括将硫酸和臭氧（或硫酸和过氧化氢的混合物）的混合物引入光掩模的表面的方法和装置，同时 应用兆声波能量。 本发明还包括方法和系统，其包括将臭氧化去离子水和/或低温稀释水溶液（dAPM）引入光掩模表面同时施加兆声波能量的方法和装置。 该方法和设备还从光掩模表面除去后等离子体灰浆残留物和其它污染物。

公开(公告)号：US06842998B2

公开(公告)日：2005-01-18

申请号：US10117739

申请日：2002-04-05

申请人： Ismail Kashkoush ,  Richard Novak ,  Larry Myland

发明人： Ismail Kashkoush ,  Richard Novak ,  Larry Myland

IPC分类号： B01D61/36 ,  B01D71/32 ,  B01D71/34 ,  B01D71/36 ,  B01F3/02 ,  B01F3/04 ,  F26B21/00

CPC分类号： B01F3/022 ,  B01F3/04021

摘要： A system, method, and apparatus for supplying a gas-liquid vapor to a process tank for performing semiconductor manufacturing. In one aspect, the invention is a method of supplying a gas-liquid vapor to a process tank comprising: supplying a gas stream through at least one hydrophobic tube; exposing the outside surface of the hydrophobic tube to a liquid so that the liquid permeates the hydrophobic tube and enters the gas stream, forming a gas-liquid vapor inside the tube; and transporting the gas-liquid vapor to the process tank. In another aspect, the invention is an apparatus for supplying a gas-liquid vapor to a process tank comprising: at least one hydrophobic tube adapted to carry a gas; and a housing forming a chamber that surrounds the tube, the chamber adapted to receive a liquid that can permeate the tube, forming a gas-liquid vapor. In yet another aspect, the invention is a system for supplying a gas-liquid vapor to a process tank comprising: the apparatus of the present invention; gas supply means adapted to supply the gas to the tube; liquid supply means adapted to supply the liquid to the chamber; and gas-liquid transport means adapted to carry the gas-fluid vapor from the apparatus to the process tank.

摘要翻译： 一种用于将气液蒸气供给到用于进行半导体制造的处理罐的系统，方法和装置。 一方面，本发明是一种将气液蒸气供应到处理罐的方法，包括：通过至少一个疏水管供应气流; 将疏水管的外表面暴露于液体，使得液体渗透疏水管并进入气流，在管内形成气液蒸气; 并将气液蒸气输送到处理罐。 在另一方面，本发明是一种用于将气液蒸气供应到处理罐的装置，包括：至少一个适于承载气体的疏水管; 以及壳体，其形成围绕所述管的室，所述室适于接收可渗透到所述管的液体，形成气液蒸气。 在另一方面，本发明是一种用于将气液蒸气供应到处理罐的系统，包括：本发明的装置; 适于将气体供应到管的气体供应装置; 适于将液体供应到所述室的液体供应装置; 以及适于将气体 - 液体蒸气从设备运送到处理罐的气液输送装置。

公开(公告)号：US06649018B2

公开(公告)日：2003-11-18

申请号：US10052823

申请日：2002-01-17

申请人： Richard Novak ,  Ismail Kashkoush

发明人： Richard Novak ,  Ismail Kashkoush

IPC分类号： H01L21304

CPC分类号： G03F7/423

摘要： A process and system for removing photoresist from semiconductor wafers comprises applying pressure in excess of one atmosphere to ozone, mixing the ozone with ambient temperature or higher deionized water via a sparger plate, and exposing the semiconductor wafers to the mixture of ozone and deionized water. The system is comprised of a tank capable of holding the semiconductor wafers, a sparger plate within the tank, a source of ozone connected to the tank, a source of deionized water connected to the tank; and finally a means for recirculating the deionized water connected to the tank. No chiller is included in the system as required by the prior art.

摘要翻译： 用于从半导体晶片去除光致抗蚀剂的工艺和系统包括向臭氧施加超过一个大气压的压力，通过喷雾器将臭氧与环境温度或更高的去离子水混合，并将半导体晶片暴露于臭氧和去离子水的混合物。 该系统包括能够保持半导体晶片的罐，罐内的分布器板，连接到罐的臭氧源，连接到罐的去离子水源; 并且最后是用于再循环连接到罐的去离子水的装置。 根据现有技术的要求，系统中不包括冷却器。

公开(公告)号：US06626189B2

公开(公告)日：2003-09-30

申请号：US10304583

申请日：2002-11-25

申请人： Ismail Kashkoush ,  Richard Novak ,  Dennis Nemeth ,  Gim-Syang Chen

发明人： Ismail Kashkoush ,  Richard Novak ,  Dennis Nemeth ,  Gim-Syang Chen

IPC分类号： B08B300

CPC分类号： H01L21/67051 ,  B08B3/02 ,  B08B7/00 ,  B08B2203/005 ,  Y10S134/902

摘要： A method for stripping photoresist from semiconductor wafers. In one aspect, the invention is a method for processing integrated circuits comprising: placing at least one wafer having an edge in a process tank having a lid; closing the lid; filling the process tank with a process liquid to a predetermined level below the edge of the wafer; supplying a process gas under pressure to a remaining volume of the process tank; and applying acoustical energy to the process liquid so as to form a mist of process liquid in the process tank. Preferably, the process liquid is ozonated deionized water and the process gas is ozone.

摘要翻译： 一种从半导体晶片剥离光致抗蚀剂的方法。 一方面，本发明是用于处理集成电路的方法，包括：将具有边缘的至少一个晶片放置在具有盖的处理槽中; 关闭盖子 用处理液将处理罐填充到晶片边缘以下的预定水平; 将压力下的处理气体供应到处理罐的剩余容积; 并向工艺液体施加声能，以便在处理罐中形成工艺液体雾。 优选地，处理液体是臭氧化的去离子水，并且处理气体是臭氧。

公开(公告)号：US07976718B2

公开(公告)日：2011-07-12

申请号：US10585229

申请日：2004-12-30

申请人： Ismail Kashkoush ,  Gim-Syang Chen ,  Richard Novak

发明人： Ismail Kashkoush ,  Gim-Syang Chen ,  Richard Novak

IPC分类号： C03C15/00

CPC分类号： H01L21/31111

摘要： A system (FIG. 5) and methods for selectively etching silicon nitride in the presence of silicon oxide that provide high selectivity while stabilizing silicon oxide etch rates. The invention comprises a processing chamber (10), dispense lines (20, 21, 22), feed lines (30, 31, 32), a recirculation line (40), a process controller (200), a concentration sensor (50), a particle counter (55), and a bleed line (90). The invention dynamically controls the concentration ratio of the components of the etchant being used and/or dynamically controls the particle count within the etchant during the processing of the at least one substrate. As a result etchant bath life is increased and etching process parameters are more tightly controlled.

摘要翻译： 一种系统（图5）和用于在存在氧化硅的情况下选择性地蚀刻氮化硅的方法，其在稳定氧化硅蚀刻速率的同时提供高选择性。 本发明包括处理室（10），分配管线（20,21,22），进料管线（30,31,32），再循环管线（40），过程控制器（200），浓度传感器（50） ，粒子计数器（55）和渗血线（90）。 本发明在处理所述至少一个基板期间动态地控制所使用的蚀刻剂的组分的浓度比和/或动态地控制蚀刻剂内的颗粒计数。 因此，蚀刻液浴寿命增加，蚀刻工艺参数得到更严格的控制。