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公开(公告)号：US4526809A
公开(公告)日：1985-07-02
申请号：US543548
申请日：1983-10-19
IPC分类号： H01L21/363 , H01L29/22
CPC分类号： H01L21/0242 , H01L21/0248 , H01L21/02485 , H01L21/02557 , H01L21/02576 , H01L21/02631
摘要： The invention relates to a process and apparatus for formation and deposition of thin films on a substrate, in a vacuum, by evaporation of the elements to form a Zn.sub.x Cd.sub.1-x S compound having a preselected fixed ratio of cadmium to zinc, characterized by the evaporation of cadmium and zinc at a rate the ratio of which is proportional to the stoichiometric ratio of those elements in the intended compound and evaporation of sulfur at a rate at least twice the combined rates of cadmium and zinc, and at least twice that required by the stoichiometry of the intended compound.
摘要翻译： 本发明涉及一种用于在真空中通过蒸发元件形成和沉积薄膜以形成具有预定的镉与锌的固定比例的Zn x C 1d化合物的方法和装置，其特征在于蒸发 镉和锌的比例，其比例与目标化合物中那些元素的化学计量比成比例，硫的蒸发速率至少是镉和锌的合并速率的两倍，并且至少是化学计量所需的两倍 的目的化合物。
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2.发明授权公开(公告)号：US06887728B2
公开(公告)日：2005-05-03
申请号：US10647409
申请日：2003-08-25
CPC分类号： H01G9/205 , C25B1/003 , H01G9/2027 , H01G9/2045 , Y02E10/542 , Y02P20/135 , Y02P70/521
摘要： The present invention relates to a semiconductor device for production of a gas from a material comprising the gas using light as the sole power source. In an embodiment, the semiconductor comprises a substrate; a solid-state semiconductor layer disposed on the substrate; a photoactive semiconductor top layer further comprising a photoelectrochemical electrode junction; and an interface layer disposed between the solid-state semiconductor layer and the photoactive semiconductor top layer. A surface of the photoactive semiconductor top layer is exposed to both a source of light such as the sun and to the material, e.g. a liquid electrolyte. The gas is liberated from the material, e.g. hydrogen liberated from a liquid electrolyte. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
摘要翻译： 本发明涉及一种用于从包括使用光作为唯一电源的气体的材料生产气体的半导体器件。 在一个实施例中，半导体包括衬底; 设置在所述基板上的固态半导体层; 还包括光电化学电极结的光活性半导体顶层; 以及设置在固态半导体层和光活性半导体顶层之间的界面层。 光活性半导体顶层的表面暴露于诸如太阳的光源和材料之类的材料上。 液体电解质。 气体从材料中释放出来，例如 从液体电解质中释放氢。 要强调的是，该摘要被提供以符合要求摘要的规则，这将允许搜索者或其他读者快速确定技术公开的主题。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。
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公开(公告)号：US4654226A
公开(公告)日：1987-03-31
申请号：US835331
申请日：1986-03-03
IPC分类号： H01L21/205 , C23C16/48 , H01L21/263 , H01L21/31 , B05D3/06
CPC分类号： C23C16/488
摘要： A photochemical vapor deposition apparatus includes a reactor housing having a window in one wall above a reaction chamber in the housing. A transparent curtain divides the reaction chamber into a reaction zone and a flush zone. At least one substrate is mounted in the reaction zone in light communication with the window so that ultraviolet radiation may penetrate through the window into the reaction zone. The window is kept clear by a gas flowing through the flush zone.
摘要翻译： 光化学气相沉积设备包括反应器壳体，其在壳体中的反应室上方的一个壁中具有窗口。 透明的窗帘将反应室分成反应区和冲洗区。 至少一个基板安装在与窗口光连通的反应区域中，使得紫外线辐射可以穿过窗口进入反应区域。 窗户被流经冲洗区的气体保持清澈。
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公开(公告)号：US4401052A
公开(公告)日：1983-08-30
申请号：US362095
申请日：1982-03-26
CPC分类号： H01L31/1876 , C23C14/24 , C23C14/56 , Y02E10/50 , Y02P70/521
摘要： An apparatus to deposit material on a substrate, such as in the making of thin solar cells, consists of two chambers. A manifold chamber having a plurality of spaces nozzles assures efficient and uniform deposition on a substrate. The rate of depositions is controlled by an orifice in a passageway connecting the manifold chamber to an evaporation chamber.
摘要翻译： 在诸如制造薄太阳能电池的衬底上沉积材料的装置由两个室组成。 具有多个空间喷嘴的歧管腔确保在衬底上有效且均匀的沉积。 沉积速率由将歧管室连接到蒸发室的通道中的孔控制。
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公开(公告)号：US4325986A
公开(公告)日：1982-04-20
申请号：US43317
申请日：1979-05-29
CPC分类号： C23C14/24 , C23C14/56 , H01L31/18 , H01L31/1828 , H01L31/1876 , Y02E10/543 , Y02P70/521
摘要： An apparatus to deposit material on a substrate, such as in the making of thin film solar cells, consists of two chambers. A manifold chamber having a plurality of spaced nozzles assures efficient and uniform deposition on a substrate. The rate of depositions is controlled by an orifice in a passageway connecting the manifold chamber to an evaporation chamber.
摘要翻译： 在诸如制造薄膜太阳能电池的衬底上沉积材料的装置由两个室组成。 具有多个间隔开的喷嘴的歧管腔确保了在衬底上的有效且均匀的沉积。 沉积速率由将歧管室连接到蒸发室的通道中的孔控制。
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6.发明授权公开(公告)号：US07122873B2
公开(公告)日：2006-10-17
申请号：US11062189
申请日：2005-02-17
CPC分类号： H01G9/205 , C25B1/003 , H01G9/2027 , H01G9/2045 , Y02E10/542 , Y02P20/135 , Y02P70/521
摘要： The present invention relates to a semiconductor device for production of a gas from a material comprising the gas using light as the sole power source. In an embodiment, the semiconductor comprises a substrate; a solid-state semiconductor layer disposed on the substrate; a photoactive semiconductor top layer further comprising a photoelectrochemical electrode junction; and an interface layer disposed between the solid-state semiconductor layer and the photoactive semiconductor top layer. A surface of the photoactive semiconductor top layer is exposed to both a source of light such as the sun and to the material, e.g. a liquid electrolyte. The gas is liberated from the material, e.g. hydrogen liberated from a liquid electrolyte. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
摘要翻译： 本发明涉及一种用于从包括使用光作为唯一电源的气体的材料生产气体的半导体器件。 在一个实施例中，半导体包括衬底; 设置在所述基板上的固态半导体层; 还包括光电化学电极结的光活性半导体顶层; 以及设置在固态半导体层和光活性半导体顶层之间的界面层。 光活性半导体顶层的表面暴露于诸如太阳的光源和材料之类的材料上。 液体电解质。 气体从材料中释放出来，例如 从液体电解质中释放氢。 要强调的是，该摘要被提供以符合要求摘要的规则，这将允许搜索者或其他读者快速确定技术公开的主题。 提交它的理解是，它不会用于解释或限制权利要求的范围或含义。
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公开(公告)号：US4396640A
公开(公告)日：1983-08-02
申请号：US333550
申请日：1981-12-22
CPC分类号： C23C14/541
摘要： An apparatus and a method for controlling the temperature of a substrate onto which thin films of semiconductor materials are vapor deposited. The apparatus contains a platen contacting a surface of said substrate over the entire length of the deposition zone; said platen having at least one cavity therein and a rounded edge where said substrate first contacts said platen of the beginning of said deposition zone.
摘要翻译： 一种用于控制其上蒸镀半导体材料薄膜的基板的温度的装置和方法。 该装置包括在沉积区的整个长度上接触所述基板的表面的压板; 所述压板在其中具有至少一个空腔和圆形边缘，其中所述基板首先接触所述沉积区开始处的所述压板。
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