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    Integrated getter area for wafer level encapsulated microelectromechanical systems
    1.
    发明授权
    Integrated getter area for wafer level encapsulated microelectromechanical systems 有权
    用于晶圆级封装微机电系统的集成吸气剂区域

    公开(公告)号：US08980668B2

    公开(公告)日：2015-03-17

    申请号：US13762584

    申请日：2013-02-08

    申请人： Robert Bosch GmbH

    发明人： Markus Lutz ,  Aaron Partridge

    IPC分类号： H01L21/00 ,  B81B7/00 ,  B81C1/00

    CPC分类号： B81B7/0038 ,  B81C1/00269 ,  B81C1/00285 ,  H01L2224/48091 ,  H01L2924/00014

    摘要： There are many inventions described and illustrated herein. In one aspect, present invention is directed to a thin film encapsulated MEMS, and technique of fabricating or manufacturing a thin film encapsulated MEMS including an integrated getter area and/or an increased chamber volume, which causes little to no increase in overall dimension(s) from the perspective of the mechanical structure and chamber. The integrated getter area is disposed within the chamber and is capable of (i) “capturing” impurities, atoms and/or molecules that are out-gassed from surrounding materials and/or (ii) reducing and/or minimizing the adverse impact of such impurities, atoms and/or molecules (for example, reducing the probability of adding mass to a resonator which would thereby change the resonator's frequency). In this way, the thin film wafer level packaged MEMS of the present invention includes a relatively stable, controlled pressure environment within the chamber to provide, for example, a more stable predetermined, desired and/or selected mechanical damping of the mechanical structure.

    摘要翻译： 这里描述和说明了许多发明。 一方面，本发明涉及一种薄膜封装的MEMS，以及制造或制造包括集成吸气剂区域和/或增加的室容积的薄膜封装的MEMS的技术，其几乎不会增加整体尺寸（s ）从机械结构和室的角度。 集成的吸气剂区域设置在室内，并且能够（i）“捕获”从周围材料中排出的杂质，原子和/或分子和/或（ii）减少和/或最小化其中的不利影响 杂质，原子和/或分子（例如，降低增加质量到共振器的概率，从而改变谐振器的频率）。 以这种方式，本发明的薄膜晶片级封装MEMS包括室内相对稳定的受控压力环境，以提供例如机械结构的更稳定的预定，期望和/或选择的机械阻尼。

    Frequency compensated oscillator design for process tolerances
    2.
    发明授权
    Frequency compensated oscillator design for process tolerances 有权

    公开(公告)号：US10439579B2

    公开(公告)日：2019-10-08

    申请号：US15966644

    申请日：2018-04-30

    申请人： Robert Bosch GmbH

    发明人： Markus Lutz ,  Aaron Partridge

    IPC分类号： H03H3/007 ,  H03H9/24 ,  H03H9/02

    摘要： A continuous or distributed resonator geometry is defined such that the fabrication process used to form a spring mechanism also forms an effective mass of the resonator structure. Proportional design of the spring mechanism and/or mass element geometries in relation to the fabrication process allows for compensation of process-tolerance-induced fabrication variances. As a result, a resonator having increased frequency accuracy is achieved.

    Frequency compensated oscillator design for process tolerances
    7.
    发明授权
    Frequency compensated oscillator design for process tolerances 有权

    公开(公告)号：US11146228B2

    公开(公告)日：2021-10-12

    申请号：US15966733

    申请日：2018-04-30

    申请人： Robert Bosch GmbH

    发明人： Markus Lutz ,  Aaron Partridge

    IPC分类号： H03H3/007 ,  H03H9/24 ,  H03H9/02

    摘要： A continuous or distributed resonator geometry is defined such that the fabrication process used to form a spring mechanism also forms an effective mass of the resonator structure. Proportional design of the spring mechanism and/or mass element geometries in relation to the fabrication process allows for compensation of process-tolerance-induced fabrication variances. As a result, a resonator having increased frequency accuracy is achieved.