公开(公告)号：US5673167A

公开(公告)日：1997-09-30

申请号：US709136

申请日：1996-09-06

申请人： Robert E. Davenport ,  Avi Tepman

发明人： Robert E. Davenport ,  Avi Tepman

IPC分类号： C23C14/24 ,  C23C14/50 ,  C23C14/54 ,  C23C14/56 ,  F16J15/08 ,  H01L21/00 ,  H01L21/02 ,  H01L21/68 ,  H01L21/683 ,  H01J37/32

CPC分类号： H01L21/67109 ,  C23C14/541 ,  C23C14/564 ,  H01L21/67103 ,  H01L21/68 ,  H01L21/6831 ,  Y10S269/903 ,  Y10S277/913 ,  Y10S277/922 ,  Y10S277/932 ,  Y10T279/23 ,  Y10T403/477 ,  Y10T403/479

摘要： The present invention pertains to an apparatus and method useful in semiconductor processing. The apparatus and method can be used to provide a seal which enables a first portion of a semiconductor processing chamber to be operated at a first pressure while a second portion of the semiconductor processing chamber is operated at a second, different pressure. The sealing apparatus and method enable processing of a semiconductor substrate under a partial vacuum which renders conductive/convective heat transfer impractical, while at least a portion of the substrate support platform is under a pressure adequate to permit heat transfer using a conductive/convective heat transfer means. The sealing apparatus comprises a thin, metal-comprising layer, typically in the form of a strip or band, brazed to at least two different surfaces within said processing chamber, whereby the first and second portions of the semiconductor processing chamber are pressure isolated from each other. Preferably, the metal-comprising layer exhibits a cross-sectional thickness of less than about 0.039 in. (1 mm). The invention is particularly useful when there is a differential in linear expansion coefficient of at least 3.times.10.sup.-3 in./in./.degree.C., measured at 600.degree. C., between the surfaces to be bridged by the thin, metal-comprising layer.

摘要翻译： 本发明涉及一种在半导体处理中有用的装置和方法。 该装置和方法可用于提供密封件，其能够使半导体处理室的第一部分在第一压力下操作，同时半导体处理室的第二部分在第二不同压力下操作。 密封装置和方法能够在部分真空下处理半导体衬底，这使得导电/对流热传递不切实际，而衬底支撑平台的至少一部分处于足以允许使用导电/对流传热的热传递的压力 手段。 密封装置包括通常为带状或带状的薄的含金属的层，钎焊到所述处理室内的至少两个不同的表面，由此半导体处理室的第一和第二部分与每一个压力隔离 其他。 优选地，含金属层的横截面厚度小于约0.039英寸（1mm）。 本发明特别有用，当线性膨胀系数在600℃下至少为3×10 -3 in / in.in℃时，待被薄金属包覆的表面之间桥接 层。

公开(公告)号：US5803977A

公开(公告)日：1998-09-08

申请号：US567601

申请日：1995-12-05

申请人： Avi Tepman ,  Robert E. Davenport

发明人： Avi Tepman ,  Robert E. Davenport

IPC分类号： B65G49/07 ,  C23C14/50 ,  C23C14/56 ,  C23C16/44 ,  C23C16/458 ,  H01L21/203 ,  H01L21/205 ,  H01L21/265 ,  H01L21/31 ,  H01L21/683 ,  C23C16/00

CPC分类号： C23C14/564 ,  C23C14/50 ,  C23C16/4401 ,  C23C16/4585

摘要： A readily removable deposition shield assembly for processing chambers such as chemical vapor deposition (CVD), ion implantation, or physical vapor deposition (PVD) or sputtering chambers, is disclosed. The shield assembly includes a shield member which is mounted to the chamber for easy removal, such as by screws, and defines a space along the periphery of the substrate support. A shield ring is inserted into the peripheral space and is thus mounted in removable fashion and is automatically centered about the substrate. The shield ring overlaps the cylindrical shield and a deposition ring. The deposition ring removably rests upon a flange extending from the outer periphery of a substrate support pedestal. Collectively, these components prevent deposition on the chamber and hardware outside the processing region.

摘要翻译： 公开了用于处理诸如化学气相沉积（CVD），离子注入或物理气相沉积（PVD）或溅射室的腔室的容易移除的沉积屏蔽组件。 屏蔽组件包括屏蔽构件，其被安装到室以便于诸如通过螺钉的移除，并且沿着衬底支撑件的周边限定空间。 屏蔽环插入到外围空间中，因此以可移动的方式安装并且自动围绕基板居中。 屏蔽环与圆柱形屏蔽和沉积环重叠。 沉积环可拆卸地搁置在从基板支撑基座的外周延伸的凸缘上。 总的来说，这些部件防止在处理区域外的室和硬件上沉积。

公开(公告)号：US5735339A

公开(公告)日：1998-04-07

申请号：US567625

申请日：1995-12-05

申请人： Robert E. Davenport ,  Avi Tepman

发明人： Robert E. Davenport ,  Avi Tepman

IPC分类号： C23C14/24 ,  C23C14/50 ,  C23C14/54 ,  C23C14/56 ,  F16J15/08 ,  H01L21/00 ,  H01L21/02 ,  H01L21/68 ,  H01L21/683 ,  B25B11/00 ,  F28F7/00

CPC分类号： H01L21/67109 ,  C23C14/541 ,  C23C14/564 ,  H01L21/67103 ,  H01L21/68 ,  H01L21/6831 ,  Y10S269/903 ,  Y10S277/913 ,  Y10S277/922 ,  Y10S277/932 ,  Y10T279/23 ,  Y10T403/477 ,  Y10T403/479

摘要： Apparatus for promoting heat transfer between a first volume (chamber volume) and a second volume (expandable, substrate support platform volume). Specifically, the apparatus comprises: a chamber defining a chamber volume that contains a chamber atmosphere, e.g., a partial vacuum; a substrate support platform that defines an expandable volume that contains a heat transfer medium, e.g., air; and a seal that isolates the chamber volume from the heat transfer medium. The substrate support platform further comprises: a substrate support platen that has a first surface located within the chamber volume and a second surface located within the expandable volume; a housing sealed to the second surface of the substrate support platen; and a expandable member such as a bellows, attached to the housing, to provide for expansion of the expandable volume that is defined by the housing and the bellows. The housing is typically fabricated of metal and the substrate support is typically fabricated of ceramic. The seal forms a hermetic junction between the ceramic substrate support and the metal housing.

摘要翻译： 用于促进第一容积（室容积）和第二容积（可扩展的衬底支撑平台体积）之间的热传递的装置。 具体地说，该装置包括：限定腔室容积的室，其容纳室气氛，例如部分真空; 衬底支撑平台，其限定包含传热介质例如空气的可膨胀体积; 以及隔离室体积与传热介质的密封。 衬底支撑平台还包括：衬底支撑压板，其具有位于腔体内的第一表面和位于可膨胀体积内的第二表面; 密封到所述基板支撑台板的第二表面的壳体; 以及附接到壳体的可膨胀构件，例如波纹管，以提供由壳体和波纹管限定的可膨胀体积的膨胀。 壳体通常由金属制成，并且衬底支撑件通常由陶瓷制成。 密封件在陶瓷基板支撑件和金属外壳之间形成密封接合部。

公开(公告)号：US5511799A

公开(公告)日：1996-04-30

申请号：US73029

申请日：1993-06-07

申请人： Robert E. Davenport ,  Avi Tepman

发明人： Robert E. Davenport ,  Avi Tepman

IPC分类号： C23C14/24 ,  C23C14/50 ,  C23C14/54 ,  C23C14/56 ,  F16J15/08 ,  H01L21/00 ,  H01L21/02 ,  H01L21/68 ,  H01L21/683

CPC分类号： H01L21/67109 ,  C23C14/541 ,  C23C14/564 ,  H01L21/67103 ,  H01L21/68 ,  H01L21/6831 ,  Y10S269/903 ,  Y10S277/913 ,  Y10S277/922 ,  Y10S277/932 ,  Y10T279/23 ,  Y10T403/477 ,  Y10T403/479

摘要： The present invention pertains to an apparatus useful in semiconductor processing. The apparatus can be used to provide a seal which enables a first portion of a semiconductor processing chamber to be operated at a first pressure while a second portion of the semiconductor processing chamber is operated at a second, different pressure. The sealing apparatus enable processing of a semiconductor substrate under a partial vacuum which renders conductive/convective heat transfer impractical, while at least a portion of the substrate support platform is under a pressure adequate to permit heat transfer using a conductive/convective heat transfer means. The sealing apparatus comprises a thin, metal-comprising layer, typically in the form of a strip or band, brazed to at least two different surfaces within said processing chamber, whereby the first and second portions of the semiconductor processing chamber are pressure isolated from each other. Preferably, the metal-comprising layer exhibits a cross-sectional thickness of less than about 0.039 in. (1 mm). The invention is particularly useful when there is a differential in linear expansion coefficient of at least 3.times.10.sup.-3 in./in./.degree.C., measured at 600.degree. C., between the surfaces to be bridged by the thin, metal-comprising layer.

摘要翻译： 本发明涉及一种可用于半导体处理的装置。 该装置可用于提供密封件，其能够使半导体处理室的第一部分在第一压力下操作，同时半导体处理室的第二部分在第二不同压力下操作。 密封装置能够在部分真空下处理半导体衬底，这使得导电/对流热传递不切实际，而衬底支撑平台的至少一部分处于足以允许使用导电/对流传热装置进行热传递的压力下。 密封装置包括通常为带状或带状的薄的含金属的层，钎焊到所述处理室内的至少两个不同的表面，由此半导体处理室的第一和第二部分与每一个压力隔离 其他。 优选地，含金属层的横截面厚度小于约0.039英寸（1mm）。 本发明特别有用，当线性膨胀系数在600℃下至少为3×10 -3 in / in.in℃时，待被薄金属包覆的表面之间桥接 层。

公开(公告)号：US5507499A

公开(公告)日：1996-04-16

申请号：US436057

申请日：1995-05-05

申请人： Robert E. Davenport ,  Avi Tepman

发明人： Robert E. Davenport ,  Avi Tepman

IPC分类号： C23C14/24 ,  C23C14/50 ,  C23C14/54 ,  C23C14/56 ,  F16J15/08 ,  H01L21/00 ,  H01L21/02 ,  H01L21/68 ,  H01L21/683

CPC分类号： H01L21/67109 ,  C23C14/541 ,  C23C14/564 ,  H01L21/67103 ,  H01L21/68 ,  H01L21/6831 ,  Y10S269/903 ,  Y10S277/913 ,  Y10S277/922 ,  Y10S277/932 ,  Y10T279/23 ,  Y10T403/477 ,  Y10T403/479

摘要： The present invention pertains to an apparatus and method useful in semiconductor processing. The apparatus and method can be used to provide a seal which enables a first portion of a semiconductor processing chamber to be operated at a first pressure while a second portion of the semiconductor processing chamber is operated at a second, different pressure.The sealing apparatus and method enable processing of a semiconductor substrate under a partial vacuum which renders conductive/convective heat transfer impractical, while at least a portion of the substrate support platform is under a pressure adequate to permit heat transfer using a conductive/convective heat transfer means. The sealing apparatus comprises a thin, metal-comprising layer, typically in the form of a strip or band, brazed to at least two different surfaces within said processing chamber, whereby the first and second portions of the semiconductor processing chamber are pressure isolated from each other. Preferably, the metal-comprising layer exhibits a cross-sectional thickness of less than about 0.039 in. (1 mm).The invention is particularly useful when there is a differential in linear expansion coefficient of at least 3.times.10.sup.-3 in./in./.degree.C., measured at 600.degree. C., between the surfaces to be bridged by the thin, metal-comprising layer.

摘要翻译： 本发明涉及一种在半导体处理中有用的装置和方法。 该装置和方法可用于提供密封件，其能够使半导体处理室的第一部分在第一压力下操作，同时半导体处理室的第二部分在第二不同压力下操作。 密封装置和方法能够在部分真空下处理半导体衬底，这使得导电/对流热传递不切实际，而衬底支撑平台的至少一部分处于足以允许使用导电/对流传热的热传递的压力 手段。 密封装置包括通常为带状或带状的薄的含金属的层，钎焊到所述处理室内的至少两个不同的表面，由此半导体处理室的第一和第二部分与每一个压力隔离 其他。 优选地，含金属层的横截面厚度小于约0.039英寸（1mm）。 本发明特别有用，当线性膨胀系数在600℃下至少为3×10 -3 in / in.in℃时，待被薄金属包覆的表面之间桥接 层。

公开(公告)号：US06509069B1

公开(公告)日：2003-01-21

申请号：US08848936

申请日：1997-05-01

申请人： Robert E. Davenport ,  Avi Tepman

发明人： Robert E. Davenport ,  Avi Tepman

IPC分类号： C23C1600

CPC分类号： H01L21/67109 ,  C23C14/541 ,  C23C14/564 ,  H01L21/67103 ,  H01L21/68 ,  H01L21/6831 ,  Y10S269/903 ,  Y10S277/913 ,  Y10S277/922 ,  Y10S277/932 ,  Y10T279/23 ,  Y10T403/477 ,  Y10T403/479

摘要： The present invention pertains to an apparatus and method useful in semiconductor processing. The apparatus and method can be used to provide a seal which enables a first portion of a semiconductor processing chamber to be operated at a first pressure while a second portion of the semiconductor processing chamber is operated at a second, different pressure. The sealing apparatus and method enable processing of a semiconductor substrate under a partial vacuum which renders conductive/convective heat transfer impractical, while at least a portion of the substrate support platform is under a pressure adequate to permit heat transfer using a conductive/convective heat transfer means. The sealing apparatus comprises a thin, metal-comprising layer, typically in the form of a strip or band, brazed to at least two different surfaces within said processing chamber, whereby the first and second portions of the semiconductor processing chamber are pressure isolated from each other. Preferably, the metal-comprising layer exhibits a cross-sectional thickness of less than about 0.039 in. (1 mm). The invention is particularly useful when there is a differential in linear expansion coefficient of at least 3×10−3 in./in./° C., measured at 600° C., between the surfaces to be bridged by the thin, metal-comprising layer.

摘要翻译： 本发明涉及一种在半导体处理中有用的装置和方法。 该装置和方法可用于提供密封件，其能够使半导体处理室的第一部分以第一压力操作，同时半导体处理室的第二部分在第二不同压力下操作。密封装置和 方法能够在部分真空下处理半导体衬底，这使得导电/对流热传递不切实际，而衬底支撑平台的至少一部分处于足以允许使用导电/对流传热装置的热传递的压力下。 密封装置包括通常为带状或带状的薄的含金属的层，钎焊到所述处理室内的至少两个不同的表面，由此半导体处理室的第一和第二部分与每一个压力隔离 其他。 优选地，含金属层的横截面厚度小于约0.039英寸（1mm）。当线性膨胀系数差为至少3×10 -3 in / in时，本发明特别有用。 /℃，在600℃下测量，待被薄的含金属层覆盖的表面之间。

公开(公告)号：US20080292433A1

公开(公告)日：2008-11-27

申请号：US11747391

申请日：2007-05-11

申请人： Robert Z. Bachrach ,  Avi Tepman ,  Alexander S. Polyak

发明人： Robert Z. Bachrach ,  Avi Tepman ,  Alexander S. Polyak

IPC分类号： B65H5/00

CPC分类号： C23C16/54 ,  C23C14/568 ,  H01L31/18

摘要： The present invention generally comprises equipment for an automated high volume batch work-piece manufacturing factory comprising work-piece handling and work-piece processing in a high productivity factory architecture capable of producing 1,000 or more work-piece an hour. The work-pieces may be presented to the equipment from a stacked supply to a parallel array. Additionally, the work-pieces may be transferred between manufacturing architectures by an array to array batch transfer. The work-pieces may be transferred within the manufacturing architecture in a parallel to parallel batch transfer operation. The robotic operations may be between robotic devices, between robotic devices and processing equipment, and within processing equipment.

摘要翻译： 本发明通常包括用于自动化大批量批量工件制造工厂的设备，其包括能够每小时生产1,000个或更多个工件的高生产率工厂结构中的工件处理和工件加工。 工件可以从堆叠的供应提供给设备到并行阵列。 另外，工件可以通过阵列在制造架构之间转移到阵列批量传输。 工件可以在并行批量传输操作的同时在制造架构内转移。 机器人操作可以在机器人设备之间，机器人设备和处理设备之间以及处理设备内。

公开(公告)号：US20080210258A1

公开(公告)日：2008-09-04

申请号：US12102846

申请日：2008-04-14

申请人： Joseph Yudovsky ,  Avi Tepman ,  Kenneth R. Reynolds ,  Younes Achkire ,  Dan A. Marohl ,  Steve G. Ghanayem ,  Alexander S. Polyak ,  Gary Ettinger ,  Haochuan Zhang ,  Hui Chen

发明人： Joseph Yudovsky ,  Avi Tepman ,  Kenneth R. Reynolds ,  Younes Achkire ,  Dan A. Marohl ,  Steve G. Ghanayem ,  Alexander S. Polyak ,  Gary Ettinger ,  Haochuan Zhang ,  Hui Chen

IPC分类号： B08B7/00 ,  A47L25/00

CPC分类号： H01L21/67046 ,  B08B1/04

摘要： A scrubber box is provided that includes a tank adapted to receive a substrate for cleaning, supports outside of the tank and adapted to couple to ends of scrubber brushes disposed within the tank, a motor mounted to each of the supports and adapted to rotate the scrubber brushes, a base to which the supports are pivotally mounted via spherical bearings adapted to permit toe-in of the scrubber brushes, a brush gap actuator adapted, via a crank and rocker mechanism, to substantially simultaneously pivot the supports toward or away from each other so as to permit the scrubber brushes to substantially simultaneously achieve or break contact with the substrate, and a toe-in actuator adapted to move two of the spherical bearings toward or away from each other so as to adjust a toe-in angle between the scrubber brushes.

摘要翻译： 提供了一种洗涤器箱，其包括适于接收用于清洁的基底的罐，支撑在罐外部并且适于耦合到设置在罐内的洗涤器刷的端部;马达，其安装到每个支撑件上并适于旋转洗涤器 电刷，支架通过适于允许洗涤器刷子进入的球面轴承可枢转地安装的基座，经由曲柄和摇臂机构适应的基本上同时地使支撑件朝向或远离彼此枢转的电刷间隙致动器 以便允许洗涤器刷子基本上同时实现或断开与基板的接触，以及适于将两个球形轴承朝向或远离彼此移动的脚趾致动器，以便调节洗涤器之间的束缚角度 刷子

公开(公告)号：US20060006058A1

公开(公告)日：2006-01-12

申请号：US10888383

申请日：2004-07-09

申请人： Avi Tepman

发明人： Avi Tepman

IPC分类号： C23C14/32

CPC分类号： C23C14/3407

摘要： A sputtering target, particularly for sputter depositing a target material onto large rectangular panels, in which a plurality of target tiles are bonded to a backing plate in a two-dimensional non-rectangular array such that the tiles meet at interstices of no more than three tile, thus locking the tiles against excessive misalignment during bonding. The rectangular tiles may be arranged in staggered rows or in a herringbone or zig-zag pattern. Hexagonal and triangular tiles also provide many of the advantages of the invention.

公开(公告)号：US20050139160A1

公开(公告)日：2005-06-30

申请号：US11059846

申请日：2005-02-16

申请人： Lawrence Lei ,  Alfred Mak ,  Gwo-Chuan Tzu ,  Avi Tepman ,  Ming Xi ,  Walter Glenn

发明人： Lawrence Lei ,  Alfred Mak ,  Gwo-Chuan Tzu ,  Avi Tepman ,  Ming Xi ,  Walter Glenn

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/00 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/45521 ,  C23C16/45574 ,  H01L21/6719

摘要： Embodiments of the present invention generally relate to a small volume chamber with a substrate support. One embodiment of a processing chamber includes a first assembly having a substrate support, a pumping ring disposed around a perimeter of the substrate receiving surface, and a gas distribution assembly disposed over the substrate support. The chamber may further include a gas distribution assembly disposed over the substrate support. The first assembly and the gas distribution assembly can be selectively positioned between an open position and a closed position.

摘要翻译： 本发明的实施例通常涉及具有基板支撑件的小容积室。 处理室的一个实施例包括具有衬底支撑件的第一组件，围绕衬底接收表面的周边设置的泵送环以及设置在衬底支撑件上方的气体分配组件。 该腔室还可包括设置在衬底支撑件上方的气体分配组件。 第一组件和气体分配组件可以选择性地定位在打开位置和关闭位置之间。