公开(公告)号：US20050139160A1

公开(公告)日：2005-06-30

申请号：US11059846

申请日：2005-02-16

申请人： Lawrence Lei ,  Alfred Mak ,  Gwo-Chuan Tzu ,  Avi Tepman ,  Ming Xi ,  Walter Glenn

发明人： Lawrence Lei ,  Alfred Mak ,  Gwo-Chuan Tzu ,  Avi Tepman ,  Ming Xi ,  Walter Glenn

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/00 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/45521 ,  C23C16/45574 ,  H01L21/6719

摘要： Embodiments of the present invention generally relate to a small volume chamber with a substrate support. One embodiment of a processing chamber includes a first assembly having a substrate support, a pumping ring disposed around a perimeter of the substrate receiving surface, and a gas distribution assembly disposed over the substrate support. The chamber may further include a gas distribution assembly disposed over the substrate support. The first assembly and the gas distribution assembly can be selectively positioned between an open position and a closed position.

摘要翻译： 本发明的实施例通常涉及具有基板支撑件的小容积室。 处理室的一个实施例包括具有衬底支撑件的第一组件，围绕衬底接收表面的周边设置的泵送环以及设置在衬底支撑件上方的气体分配组件。 该腔室还可包括设置在衬底支撑件上方的气体分配组件。 第一组件和气体分配组件可以选择性地定位在打开位置和关闭位置之间。

公开(公告)号：US06866746B2

公开(公告)日：2005-03-15

申请号：US10302774

申请日：2002-11-21

申请人： Lawrence C. Lei ,  Alfred W. Mak ,  Gwo-Chuan Tzu ,  Avi Tepman ,  Ming Xi ,  Walter Benjamin Glenn

发明人： Lawrence C. Lei ,  Alfred W. Mak ,  Gwo-Chuan Tzu ,  Avi Tepman ,  Ming Xi ,  Walter Benjamin Glenn

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/00 ,  C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/45521 ,  C23C16/45574 ,  H01L21/6719

摘要： Embodiments of the present invention generally relate to a clamshell and small volume chamber with a fixed substrate support. One embodiment of a processing chamber includes a fixed substrate support having a substrate receiving surface, a pumping ring disposed around a perimeter of the substrate receiving surface, and a gas distribution assembly disposed over the fixed substrate support. The pumping ring forms at least a portion of a pumping channel and has one or more apertures formed therethrough. The chamber may further include a gas-flow diffuser disposed radially inward of the apertures of the pumping ring. Another embodiment of a processing chamber includes a first assembly comprising a fixed substrate support and a second assembly comprising a gas distribution assembly. The first assembly includes a first assembly body that is shaped and sized so that at least a portion of the first assembly body is below the substrate receiving surface of the substrate support. A hinge assembly couples the first assembly and the second assembly. The first assembly and the second assembly can be selectively positioned between an open position and a closed position.

摘要翻译： 本发明的实施例一般涉及具有固定衬底支撑件的蛤壳式和小容积室。 处理室的一个实施例包括具有基板接收表面的固定基板支撑件，围绕基板接收表面的周边设置的泵送环和设置在固定基板支撑件上方的气体分配组件。 泵送环形成泵送通道的至少一部分并且具有通过其形成的一个或多个孔。 腔室还可以包括设置在泵送环的孔的径向内侧的气流扩散器。 处理室的另一实施例包括包括固定衬底支撑件的第一组件和包括气体分配组件的第二组件。 第一组件包括第一组件主体，其形状和尺寸使得第一组件主体的至少一部分在衬底支撑件的衬底接收表面下方。 铰链组件联接第一组件和第二组件。 第一组件和第二组件可以选择性地定位在打开位置和关闭位置之间。

公开(公告)号：US20080072823A1

公开(公告)日：2008-03-27

申请号：US11870285

申请日：2007-10-10

申请人： Joseph Yudovsky ,  Lawrence Lei ,  Salvador Umotoy ,  Tom Madar ,  Girish Dixit ,  Gwo-Chuan Tzu

发明人： Joseph Yudovsky ,  Lawrence Lei ,  Salvador Umotoy ,  Tom Madar ,  Girish Dixit ,  Gwo-Chuan Tzu

IPC分类号： C23C16/458

CPC分类号： C23C16/4585 ,  C30B25/12 ,  C30B31/14

摘要： The invention provides a removable first edge ring configured for pin and recess/slot coupling with a second edge ring disposed on the substrate support. In one embodiment, a first edge ring includes a plurality of pins, and a second edge ring includes one or more alignment recesses and one or more alignment slots for mating engagement with the pins. Each of the alignment recesses and alignment slots are at least as wide as the corresponding pins, and each of the alignment slots extends in the radial direction a length that is sufficient to compensate for the difference in thermal expansion between the first edge ring and the second edge ring.

摘要翻译： 本发明提供了可拆卸的第一边缘环，其被配置用于与设置在基板支撑件上的第二边缘环的销和凹槽/狭槽联接。 在一个实施例中，第一边缘环包括多个销，并且第二边缘环包括一个或多个对准凹槽和用于与销配合接合的一个或多个对准槽。 每个对准凹槽和对准槽至少与相应的销一样宽，并且每个对准槽在径向方向上延伸的长度足以补偿第一边缘环和第二边缘之间的热膨胀差 边缘环。

公开(公告)号：US6050446A

公开(公告)日：2000-04-18

申请号：US893410

申请日：1997-07-11

申请人： Lawrence Lei ,  Son Trinh ,  Gwo-Chuan Tzu ,  Mark Johnson

发明人： Lawrence Lei ,  Son Trinh ,  Gwo-Chuan Tzu ,  Mark Johnson

IPC分类号： H01L21/00 ,  B65D43/24

CPC分类号： H01L21/67017

摘要： A lid assembly for a process chamber. The lid assembly includes a hinge having a hinge mount affixed to the chamber and a hinge arm. A pin extends from the hinge mount through an elongated slot in the hinge arm allowing both rotational and longitudinal motion of the hinge arm relative to the hinge mount. A support frame attached to the hinge arm has two side arms that extend perpendicularly from the hinge arms toward the front of the chamber. The lid is pivotally connected to the side arms by a pivot connection aligned with the center of mass of the lid. A detent extends from the lid through a slot in the side arm at a position offset from the pivot connection. The detent and slot serve to limit the allowable rotation of the lid relative to the lid support frame. Thus, the lid is allowed to float over the opening of the chamber as the lid is closed so that the lid may be positioned in parallel alignment relative to the opening of the chamber before being secured to the chamber.

摘要翻译： 用于处理室的盖组件。 盖组件包括铰链，铰链具有固定到腔室的铰链座和铰链臂。 销从铰链座延伸通过铰链臂中的细长槽，允许铰链臂相对于铰链座的旋转和纵向运动。 附接到铰链臂的支撑框架具有从铰链臂朝向腔室的前部垂直延伸的两个侧臂。 盖通过与盖的质心对准的枢转连接件枢转地连接到侧臂。 制动器在从枢轴连接偏离的位置处从盖子延伸穿过侧臂中的狭槽。 制动器和狭槽用于限制盖相对于盖支撑框架的允许旋转。 因此，当盖被关闭时，允许盖在室的开口上浮动，使得盖可以在被固定到室之前相对于室的开口平行对准地定位。

公开(公告)号：US20070040265A1

公开(公告)日：2007-02-22

申请号：US11506460

申请日：2006-08-17

申请人： Salvador Umotoy ,  Lawrence Lei ,  Gwo-Chuan Tzu ,  Xiaoxiong Yuan ,  Michael Jackson ,  Hymam Lam

发明人： Salvador Umotoy ,  Lawrence Lei ,  Gwo-Chuan Tzu ,  Xiaoxiong Yuan ,  Michael Jackson ,  Hymam Lam

IPC分类号： H01L23/12

CPC分类号： H01L21/67103 ,  C23C16/45521 ,  C23C16/4586 ,  C23C16/466 ,  H01L21/6838 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68785

摘要： A substrate support comprises top, middle and bottom plates which are brazed together. The top plate has a top surface with a plurality of outwardly projecting mesas dispersed across a recessed pocket, a network of recessed grooves, a vacuum port terminating in the recessed grooves, and plurality of gas ports. The middle plate has a plurality of middle feedthroughs aligned to corresponding top feedthroughs of the top plate, and the bottom plate has a plurality of bottom feedthroughs aligned to the middle feedthroughs of the middle plate. The top and middle plates are joined by a first brazed bond layer and the middle and bottom plates are joined by a second brazed bond layer.

摘要翻译： 衬底支撑件包括钎焊在一起的顶板，中板和底板。 顶板具有顶表面，多个向外突出的台面分散在凹槽中，凹槽网络，终止于凹槽中的真空端口以及多个气体端口。 中间板具有与顶板的相应的顶部馈通对准的多个中间馈通，并且底板具有与中间板的中间馈通对准的多个底部馈通。 顶板和中间板通过第一钎焊接合层连接，中间和底板通过第二钎焊接合层连接。

公开(公告)号：US20060130971A1

公开(公告)日：2006-06-22

申请号：US11137200

申请日：2005-05-24

申请人： Yu Chang ,  Gwo-Chuan Tzu ,  Salvador Umotoy ,  Chien-Teh Kao ,  William Kuang ,  Xiaoxiong Yuan ,  Mei Chang

发明人： Yu Chang ,  Gwo-Chuan Tzu ,  Salvador Umotoy ,  Chien-Teh Kao ,  William Kuang ,  Xiaoxiong Yuan ,  Mei Chang

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01L21/31116 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32541 ,  H01L21/28247 ,  H01L21/67069 ,  H01L29/665

摘要： A method and apparatus for processing a substrate is provided. In one aspect, the chamber comprises a chamber body and a support assembly at least partially disposed within the chamber body adapted to support a substrate thereon. The chamber further comprises a lid assembly disposed on an upper surface of the chamber body. The lid assembly includes a top plate and a gas delivery assembly which define a plasma cavity therebetween, wherein the gas delivery assembly is adapted to heat the substrate. A remote plasma source having a U-shaped plasma region is connected to the gas delivery assembly.

摘要翻译： 提供了一种用于处理衬底的方法和设备。 在一个方面，所述腔室包括室主体和至少部分地设置在所述腔体内的适于在其上支撑衬底的支撑组件。 所述室还包括设置在所述室主体的上表面上的盖组件。 盖组件包括顶板和在其间限定等离子体腔的气体输送组件，其中气体输送组件适于加热衬底。 具有U形等离子体区域的远程等离子体源连接到气体输送组件。

公开(公告)号：US07905959B2

公开(公告)日：2011-03-15

申请号：US10993924

申请日：2004-11-19

申请人： Gwo-Chuan Tzu ,  Salvador P. Umotoy

发明人： Gwo-Chuan Tzu ,  Salvador P. Umotoy

IPC分类号： C23C16/452 ,  H01L21/50

CPC分类号： C23C16/45544 ,  C23C16/455 ,  C23C16/45512 ,  C23C16/45525 ,  C23C16/45538 ,  C23C16/45561 ,  C23C16/50 ,  H01L21/67017

摘要： A lid assembly for a semiconductor processing system is provided. The lid assembly generally includes a lid having first and second opposed surfaces, a plurality of controllable flow channels extending from the first and second opposed surfaces and a gas control system disposed on the first surface and operably opening and closing the channels. The gas control system includes a gas manifold disposed on the lid, at least one valve coupled to the gas manifold and adapted to control a flow through one of the flow channels, a reservoir fluidly connected to the gas manifold, and a precursor source fluidly connected to the reservoir.

摘要翻译： 提供了一种用于半导体处理系统的盖组件。 盖组件通常包括具有第一和第二相对表面的盖，从第一和第二相对表面延伸的多个可控流动通道和设置在第一表面上并可操作地打开和关闭通道的气体控制系统。 气体控制系统包括设置在盖上的气体歧管，至少一个阀，其连接到气体歧管并且适于控制通过流动通道之一的流动，流体连接到气体歧管的储存器和流体连接的前体源 到水库

公开(公告)号：US20080206987A1

公开(公告)日：2008-08-28

申请号：US12021798

申请日：2008-01-29

申请人： Avgerinos V. Gelatos ,  Sang-Hyeob Lee ,  Xiaoxiong Yuan ,  Salvador P. Umotoy ,  Yu Chang ,  Gwo-Chuan Tzu ,  Emily Renuart ,  Jing Lin ,  Wing-Cheong Lai ,  Sang Q. Le

发明人： Avgerinos V. Gelatos ,  Sang-Hyeob Lee ,  Xiaoxiong Yuan ,  Salvador P. Umotoy ,  Yu Chang ,  Gwo-Chuan Tzu ,  Emily Renuart ,  Jing Lin ,  Wing-Cheong Lai ,  Sang Q. Le

IPC分类号： H01L21/44

CPC分类号： C23C16/14 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/4411 ,  C23C16/45512 ,  C23C16/45523

摘要： Embodiments of the invention provide processes for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a method for forming a tungsten-containing material is provided which includes positioning a substrate within a processing chamber containing a lid plate, heating the lid plate to a temperature within a range from about 120° C. to about 180° C., exposing the substrate to a reducing gas during a pre-nucleation soak process, and depositing a first tungsten nucleation layer on the substrate during a first atomic layer deposition process within the processing chamber. The method further provides depositing a tungsten nitride layer on the first tungsten nucleation layer during a vapor deposition process, depositing a second tungsten nucleation layer on the tungsten nitride layer during a second atomic layer deposition process within the processing chamber, and exposing the substrate to another reducing gas during a post-nucleation soak process.

摘要翻译： 本发明的实施方案提供了诸如金属钨和氮化钨的含钨材料的气相沉积方法。 在一个实施例中，提供了一种用于形成含钨材料的方法，其包括将衬底定位在包含盖板的处理室内，将盖板加热至约120℃至约180℃的温度 在预成核浸泡工艺期间将衬底暴露于还原气体，以及在处理室内的第一原子层沉积工艺期间在衬底上沉积第一钨成核层。 该方法还提供了在气相沉积工艺期间在第一钨成核层上沉积氮化钨层，在处理室内的第二原子层沉积工艺期间在氮化钨层上沉积第二钨成核层，并将衬底暴露于另一个 在后成核浸泡过程中还原气体。

公开(公告)号：US20080202425A1

公开(公告)日：2008-08-28

申请号：US12021825

申请日：2008-01-29

申请人： Avgerinos V. Gelatos ,  Sang-Hyeob Lee ,  Xiaoxiong Yuan ,  Salvador P. Umotoy ,  Yu Chang ,  Gwo-Chuan Tzu ,  Emily Renuart ,  Jing Lin ,  Wing-Cheong Lai ,  Sang Q. Le

发明人： Avgerinos V. Gelatos ,  Sang-Hyeob Lee ,  Xiaoxiong Yuan ,  Salvador P. Umotoy ,  Yu Chang ,  Gwo-Chuan Tzu ,  Emily Renuart ,  Jing Lin ,  Wing-Cheong Lai ,  Sang Q. Le

IPC分类号： C23C16/06

CPC分类号： C23C16/14 ,  C23C16/34 ,  C23C16/4401 ,  C23C16/4411 ,  C23C16/45512 ,  C23C16/45523

摘要： Embodiments of the invention provide apparatuses for vapor depositing tungsten-containing materials, such as metallic tungsten and tungsten nitride. In one embodiment, a processing chamber is provided which includes a lid assembly containing a lid plate, a showerhead, a mixing cavity, a distribution cavity, and a resistive heating element contained within the lid plate. In one example, the resistive heating element is configured to provide the lid plate at a temperature within a range from about 120° C. to about 180° C., preferably, from about 140° C. to about 160° C., more preferably, from about 145° C. to about 155° C. The mixing cavity may be in fluid communication with a tungsten precursor source containing tungsten hexafluoride and a nitrogen precursor source containing ammonia. In some embodiments, a single processing chamber may be used to deposit metallic tungsten and tungsten nitride materials by CVD processes.

摘要翻译： 本发明的实施例提供了用于气相沉积含钨材料如金属钨和氮化钨的装置。 在一个实施例中，提供了一种处理室，其包括盖子组件，该盖子组件包含盖板，喷头，混合腔，分配腔和容纳在盖板内的电阻加热元件。 在一个示例中，电阻加热元件被配置成将盖板设置在约120℃至约180℃，优选约140℃至约160℃的温度范围内，更多 优选约145℃至约155℃。混合腔可与含有六氟化钨的钨前体源和含氨的氮前体源流体连通。 在一些实施例中，单个处理室可用于通过CVD工艺沉积金属钨和氮化钨材料。

公开(公告)号：US06500263B2

公开(公告)日：2002-12-31

申请号：US09817786

申请日：2001-03-26

申请人： Yu Chang ,  Wen Xiao Chen ,  Gwo-Chuan Tzu

发明人： Yu Chang ,  Wen Xiao Chen ,  Gwo-Chuan Tzu

IPC分类号： C23C16000

CPC分类号： H01L21/67253 ,  C23C16/44 ,  H01L21/67017

摘要： Multiple levels of interlocks are provided relative to gas flow for a chemical vapor deposition chamber. When a chamber lid used for normal processing is in place, no interlock is in effect. When a lid used during maintenance operations is in place, flow of toxic gas to the chamber is interlocked, but flow of purge gas is permitted. When no lid is in place, all gas flow to the chamber is interlocked. The interlock arrangement may be implemented with two switches, both of which are actuated when the lid for normal processing is in place, and only one of which is actuated by the lid for the maintenance process.

摘要翻译： 提供了相对于化学气相沉积室的气流的多级互锁。 当用于正常加工的室盖盖就位时，没有联锁效果。 当维护操作中使用的盖子就位时，有毒气体流向腔室是互锁的，但允许吹扫气体流动。 当没有盖子就位时，所有流到腔室的气体是互锁的。 互锁装置可以用两个开关来实现，当开关用于正常加工时，两个开关都被致动，并且只有其中一个由用于维护过程的盖子致动。