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1.发明申请公开(公告)号：US20100165511A1
公开(公告)日：2010-07-01
申请号：US12345812
申请日：2008-12-30
IPC分类号： G11B5/60
CPC分类号： G11B5/6005 , G11B5/3993
摘要： A slider for magnetic data recording having a semiconductor based magnetoresistive sensor such as a Lorentz magnetoresistive sensor formed on an air bearing surface of the slider body. The slider is constructed of Si, which advantageously provides a needed physical robustness as well being compatible with the construction of a semiconductor based sensor thereon. A series of transition layers are provided between the surface of the Si slider body and the semiconductor based magnetoresistive sensor in order to provide a necessary grain structure for proper functioning of the sensor. The series of transition layers can be constructed of layers of SiGe each having a unique concentration of Ge.
摘要翻译： 一种用于磁数据记录的滑块，其具有形成在滑块体的空气轴承表面上的诸如洛伦兹磁阻传感器的基于半导体的磁阻传感器。 滑块由Si构成，其有利地提供所需的物理坚固性，并且与其上的基于半导体的传感器的构造兼容。 在Si滑块体的表面和半导体基磁阻传感器之间提供一系列过渡层，以便为传感器的正常功能提供必要的晶粒结构。 所述一系列过渡层可以由具有独特浓度Ge的SiGe层构成。
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2.发明授权Slider with integrated writer and semiconductor heterostucture read sensor 有权具有集成写入器和半导体异构结构读取传感器的滑块公开(公告)号：US08107197B2
公开(公告)日：2012-01-31
申请号：US12345812
申请日：2008-12-30
IPC分类号： G11B15/64
CPC分类号： G11B5/6005 , G11B5/3993
摘要： A slider for magnetic data recording having a semiconductor based magnetoresistive sensor such as a Lorentz magnetoresistive sensor formed on an air bearing surface of the slider body. The slider is constructed of Si, which advantageously provides a needed physical robustness as well being compatible with the construction of a semiconductor based sensor thereon. A series of transition layers are provided between the surface of the Si slider body and the semiconductor based magnetoresistive sensor in order to provide a necessary grain structure for proper functioning of the sensor. The series of transition layers can be constructed of layers of SiGe each having a unique concentration of Ge.
摘要翻译： 一种用于磁数据记录的滑块，其具有形成在滑块体的空气轴承表面上的诸如洛伦兹磁阻传感器的基于半导体的磁阻传感器。 滑块由Si构成，其有利地提供所需的物理坚固性，并且与其上的基于半导体的传感器的构造兼容。 在Si滑块体的表面和半导体基磁阻传感器之间提供一系列过渡层，以便为传感器的正常功能提供必要的晶粒结构。 所述一系列过渡层可以由具有独特浓度Ge的SiGe层构成。
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![Narrow track extraordinary magneto resistive [EMR] device](/abs-image/US/2007/11/13/US07295406B2/abs.jpg.150x150.jpg)
公开(公告)号：US07295406B2
公开(公告)日：2007-11-13
申请号：US10897454
申请日：2004-07-22
申请人： Amitava Chattopadhyay , Robert E. Fontana, Jr. , Bruce Alvin Gurney , Stefan Maat , Ernesto E. Marinero
发明人： Amitava Chattopadhyay , Robert E. Fontana, Jr. , Bruce Alvin Gurney , Stefan Maat , Ernesto E. Marinero
IPC分类号： G11B5/39
CPC分类号： G11C11/14 , B82Y25/00 , G01R33/093 , G01R33/095 , G11B5/3993 , G11B5/4853
摘要： An extraordinary magnetoresistive sensor having optimal magnetic sensitivity capable of reading a very narrow and short magnetic bit. The sensor includes a layer of semiconductor layer and a layer of electrically conductive material. The first and second leads are electrically connected with an edge of the semiconductor material, one of the leads being located a distance inward from an end of the sensor. The sensor also includes first and second voltage leads, located on either side of and close to one of the current leads.
摘要翻译： 具有最佳磁敏感度的非凡磁阻传感器，能够读取非常窄和短的磁头。 传感器包括一层半导体层和一层导电材料。 第一和第二引线与半导体材料的边缘电连接，其中一个引线位于与传感器的端部相距一定距离处。 该传感器还包括第一和第二电压引线，位于电流引线之一的两侧。
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4.发明授权Method for manufacturing an extraordinary magnetoresistive (EMR) device with novel lead structure 有权用于制造具有新型引线结构的非凡磁阻（EMR）器件的方法公开(公告)号：US08166633B2
公开(公告)日：2012-05-01
申请号：US12972332
申请日：2010-12-17
申请人： Thomas Dudley Boone, Jr. , Liesl Folks , Bruce Alvin Gurney , Jordan Asher Katine , Ernesto E. Marinero , Neil Smith
发明人： Thomas Dudley Boone, Jr. , Liesl Folks , Bruce Alvin Gurney , Jordan Asher Katine , Ernesto E. Marinero , Neil Smith
CPC分类号： G01R33/093 , B82Y25/00 , G01R33/095 , G11B5/398 , G11B5/3993 , G11C11/14 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for manufacturing an extraordinary magnetoresistive sensor (EMR sensor) having reduced size and increased resolution is described. The sensor includes a plurality of electrically conductive leads contacting a magnetically active layer and also includes an electrically conductive shunt structure. The electrically conductive leads of the sensor and the shunt structure can be formed in a common photolithographic masking and etching process so that they are self aligned with one another. This avoids the need to align multiple photolithographic processing steps, thereby allowing greatly increased resolution and reduced lead spacing. The EMR sensor can be formed with a magnetically active layer that can be close to or at the air bearing surface (ABS) for improved magnetic spacing with an adjacent magnetic medium of a data recording system.
摘要翻译： 描述了具有减小的尺寸和增加的分辨率的非常大的磁阻传感器（EMR传感器）的制造方法。 传感器包括接触磁性有源层的多个导电引线，并且还包括导电分路结构。 传感器和分路结构的导电引线可以以普通的光刻掩模和蚀刻工艺形成，使得它们彼此自对准。 这避免了需要对准多个光刻处理步骤，从而允许大大提高分辨率和减小引线间距。 EMR传感器可以形成有可靠近或位于空气轴承表面（ABS）的磁性活性层，以改善与数据记录系统的相邻磁性介质的磁间距。
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公开(公告)号：US20090251820A1
公开(公告)日：2009-10-08
申请号：US12487345
申请日：2009-06-18
CPC分类号： G11B5/397 , G11B5/3993 , G11B5/59655
摘要： A magnetic storage system according to one embodiment includes magnetic media containing magnetic domain tracks; and at least one head for reading from the magnetic media, each head having: a first Extraordinary Magentoresistive (EMR) device for detecting magnetic fields of a first magnetic domain track; a second EMR device for detecting magnetic fields of a second magnetic domain track. The system further includes a slider for supporting the head; and a control unit coupled to the head for controlling operation of the head. A system according to another embodiment includes a first Extraordinary Magnetoresistive (EMR) device for detecting magnetic fields of a magnetic domain of interest. A system according to yet another embodiment includes an Extraordinary Magnetoresistive (EMR) device for deriving servoing information.
摘要翻译： 根据一个实施例的磁存储系统包括含有磁畴轨迹的磁介质; 以及用于从磁性介质读取的至少一个磁头，每个磁头具有：用于检测第一磁畴磁道的磁场的第一非均衡磁阻（EMR）装置; 用于检测第二磁畴轨道的磁场的第二EMR装置。 该系统还包括用于支撑头部的滑块; 以及耦合到头部用于控制头部的操作的控制单元。 根据另一实施例的系统包括用于检测感兴趣的磁畴的磁场的第一非均匀磁阻（EMR）装置。 根据又一实施例的系统包括用于导出伺服信息的非寻常磁阻（EMR）装置。
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6.发明申请OPTIMIZATION OF TWO DIMENSIONAL ELECTRON GAS STRUCTURES FOR MAGNETIC RECORDING SENSORS 有权用于磁记录传感器的两维电子气体结构优化公开(公告)号：US20090195939A1
公开(公告)日：2009-08-06
申请号：US12027213
申请日：2008-02-06
IPC分类号： G11B5/127
CPC分类号： G11B5/374
摘要： A Lorentz Magnetoresistive sensor having an ultrathin trapping layer disposed between a quantum well structure and a surface of the sensor. The trapping layer prevents charge carriers from the surface of the sensor from affecting the quantum well structure. This allows the quantum well structure to be formed much closer to the surface of the sensor, and therefore, much closer to the magnetic field source, greatly improving sensor performance. A Lorentz Magnetoresistive sensor having a top gate electrode to hinder surface charge carriers diffusing into the quantum well, said top gate electrode being either a highly conductive ultrathin patterned metal layer or a patterned monoatomic layer of graphene.
摘要翻译： 洛伦兹磁阻传感器，其具有设置在量子阱结构和传感器表面之间的超薄捕获层。 捕获层防止传感器表面的电荷载体影响量子阱结构。 这允许量子阱结构形成得更接近传感器的表面，因此更接近于磁场源，大大提高了传感器的性能。 一种洛伦兹磁阻传感器，其具有顶部栅极以阻止表面电荷载流子扩散到量子阱中，所述顶部栅电极是高度导电的超薄图案化的金属层或图案化的石墨烯单原子层。
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公开(公告)号：US08035932B2
公开(公告)日：2011-10-11
申请号：US11858816
申请日：2007-09-20
申请人： Bruce Alvin Gurney , Ernesto E. Marinero , Andrew Stuart Troup , David Arfon Williams , Joerg Wunderlich
发明人： Bruce Alvin Gurney , Ernesto E. Marinero , Andrew Stuart Troup , David Arfon Williams , Joerg Wunderlich
IPC分类号： G11B5/60
CPC分类号： G11B5/3993 , B82Y25/00 , G01R33/093 , G01R33/095 , G11B5/3903 , G11B2005/0002
摘要： A Lorentz magnetoresistive sensor having integrated signal amplification. The sensor is constructed upon a substrate such as a semiconductor material, and an amplification circuit such as transistor is constructed directly into the substrate on which the magnetoresistive device is constructed. This integrated signal amplification greatly enhances sensor performance by eliminating a great deal of signal noise that would otherwise be added to the read signal.
摘要翻译： 具有集成信号放大的洛伦兹磁阻传感器。 传感器构造在诸如半导体材料的衬底上，并且诸如晶体管的放大电路直接构成到其上构成磁阻器件的衬底中。 该集成信号放大通过消除否则将被添加到读取信号的大量信号噪声来大大提高传感器性能。
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8.发明授权公开(公告)号：US07881020B2
公开(公告)日：2011-02-01
申请号：US11747683
申请日：2007-05-11
申请人： Thomas Dudley Boone, Jr. , Liesl Folks , Bruce Alvin Gurney , Jordan Asher Katine , Ernesto E. Marinero , Neil Smith
发明人： Thomas Dudley Boone, Jr. , Liesl Folks , Bruce Alvin Gurney , Jordan Asher Katine , Ernesto E. Marinero , Neil Smith
CPC分类号： G01R33/093 , B82Y25/00 , G01R33/095 , G11B5/398 , G11B5/3993 , G11C11/14 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： An extraordinary magnetoresistive sensor (EMR sensor) having reduced size and increased resolution is described. The sensor includes a plurality of electrically conductive leads contacting a magnetically active layer and also includes an electrically conductive shunt structure. The electrically conductive leads of the sensor and the shunt structure can be formed in a common photolithographic masking and etching process so that they are self aligned with one another. This avoids the need to align multiple photolithographic processing steps, thereby allowing greatly increased resolution and reduced lead spacing. The EMR sensor can be formed with a magnetically active layer that can be close to or at the air bearing surface (ABS) for improved magnetic spacing with an adjacent magnetic medium of a data recording system.
摘要翻译： 描述了具有减小的尺寸和增加的分辨率的非凡的磁阻传感器（EMR传感器）。 传感器包括接触磁性有源层的多个导电引线，并且还包括导电分路结构。 传感器和分路结构的导电引线可以以普通的光刻掩模和蚀刻工艺形成，使得它们彼此自对准。 这避免了需要对准多个光刻处理步骤，从而允许大大提高分辨率和减小引线间距。 EMR传感器可以形成有可靠近或位于空气轴承表面（ABS）的磁性活性层，以改善与数据记录系统的相邻磁性介质的磁间距。
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公开(公告)号：US07848060B2
公开(公告)日：2010-12-07
申请号：US12487345
申请日：2009-06-18
CPC分类号： G11B5/397 , G11B5/3993 , G11B5/59655
摘要： A magnetic storage system according to one embodiment includes magnetic media containing magnetic domain tracks; and at least one head for reading from the magnetic media, each head having: a first Extraordinary Magentoresistive (EMR) device for detecting magnetic fields of a first magnetic domain track; a second EMR device for detecting magnetic fields of a second magnetic domain track. The system further includes a slider for supporting the head; and a control unit coupled to the head for controlling operation of the head. A system according to another embodiment includes a first Extraordinary Magnetoresistive (EMR) device for detecting magnetic fields of a magnetic domain of interest. A system according to yet another embodiment includes an Extraordinary Magnetoresistive (EMR) device for deriving servoing information.
摘要翻译： 根据一个实施例的磁存储系统包括含有磁畴轨迹的磁介质; 以及用于从磁性介质读取的至少一个磁头，每个磁头具有：用于检测第一磁畴磁道的磁场的第一非均衡磁阻（EMR）装置; 用于检测第二磁畴轨道的磁场的第二EMR装置。 该系统还包括用于支撑头部的滑块; 以及耦合到头部用于控制头部的操作的控制单元。 根据另一实施例的系统包括用于检测感兴趣的磁畴的磁场的第一非均匀磁阻（EMR）装置。 根据又一实施例的系统包括用于导出伺服信息的非寻常磁阻（EMR）装置。
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10.发明授权Magnetic head having a hall effect sensor and circuit for detecting recorded bits from magnetic recording media 失效具有霍尔效应传感器的磁头和用于检测来自磁记录介质的记录位的电路公开(公告)号：US07440227B2
公开(公告)日：2008-10-21
申请号：US11069414
申请日：2005-02-28
IPC分类号： G11B5/37
CPC分类号： G11B5/376
摘要： A magnetic head has a sensor which employs the “Hall effect”. In one illustrative example, the sensor includes a generally planar body made of a semiconductor heterostructure; first and second contacts comprising first and second drains, respectively, which are formed over a first end of the body and spaced equally apart from a centerline of the body; and a third contact comprising a source formed over a second end of the body which is opposite the first end of the body. The semiconductor heterostructure is comprised of a high mobility two-dimensional electron or hole gas close to an air bearing surface (ABS) of the magnetic head so as to be exposed to magnetic field lines substantially normal to it from magnetically recorded bits. Advantageously, the sensor does not require magnetic materials utilized in conventional sensors and therefore does not suffer from magnetic noise associated therewith.
摘要翻译： 磁头具有采用“霍尔效应”的传感器。 在一个说明性示例中，传感器包括由半导体异质结构制成的大体平面体; 第一和第二触头分别包括第一和第二漏极，它们分别形成在主体的第一端上并且与主体的中心线间隔开; 以及第三触点，其包括形成在所述主体的与所述主体的第一端相对的第二端上的源。 半导体异质结构包括靠近磁头的空气轴承表面（ABS）的高迁移率二维电子或空穴气体，以便从磁记录钻头暴露于基本垂直于其的磁场线。 有利地，传感器不需要在常规传感器中使用的磁性材料，因此不会与其相关的磁性噪声。
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