Method for recording microstructural changes in a component
    9.
    发明授权
    Method for recording microstructural changes in a component 失效
    用于记录组件中的微结构变化的方法

    公开(公告)号:US07584669B2

    公开(公告)日:2009-09-08

    申请号:US10589791

    申请日:2005-02-14

    IPC分类号: G01N3/00

    摘要: Method for recording microstructural changes in a layer system component. A specific material parameter of the component is measured. The layer system may include an alloy substrate and an alloy or porous ceramic layer. The material parameter may be measured a plurality of times. The measured material parameter may include electrical capacitance, specific heat capacity, peltier coefficient or magnetic susceptibility. The material parameter may first be measured on a new component and subsequent measurements may be performed at a time interval after operational use. The recorded material parameter is then used to determine microstructural changes in the substrate or the layer material of the component caused by changes in precipitation, cracks, or depletion of an alloying element.

    摘要翻译: 在层系统组件中记录微结构变化的方法。 测量组件的具体材料参数。 层系统可以包括合金基底和合金或多孔陶瓷层。 可以多次测量材料参数。 测量的材料参数可以包括电容,比热容,珀耳替系数或磁化率。 材料参数可以首先在新组件上测量,并且可以在操作使用之后的时间间隔执行后续测量。 然后记录的材料参数用于确定由沉淀,裂纹或合金元素的消耗的变化引起的基板或部件的层材料中的微结构变化。