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公开(公告)号：US4036647A
公开(公告)日：1977-07-19
申请号：US298715
申请日：1972-10-13
摘要： An improved package for photopolymerized recording materials is disclosed. The package consists essentially of a cover plate, a substrate spaced apart from said cover plate, at least one of the said cover plate or said substrate having a coating on an internal surface of a photopolymerizable compound or a catalyst therefore, and fluid ingress means for introducing fluid into the space between said cover plate and said substrate. In a particularly preferred embodiment the ingress means is associated with a collapsible vessel located outside the basic package. Also disclosed are methods for using the package such as in holographic nondestructive testing.
摘要翻译： 公开了一种改进的光聚合记录材料包装。 所述封装基本上由盖板，与所述盖板间隔开的基板，所述盖板或所述基板中的至少一个在所述可光聚合化合物或催化剂的内表面上具有涂层，以及流体入口装置， 将流体引入到所述盖板和所述基板之间的空间中。 在特别优选的实施例中，入口装置与位于基本包装外部的可折叠容器相关联。 还公开了使用诸如全息非破坏性测试中的包装的方法。
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2.发明授权Wet process for developing styrene polymer resists for submicron lithography 失效用于开发苯乙烯聚合物的湿法可抵抗亚微米光刻
公开(公告)号：US4587203A
公开(公告)日：1986-05-06
申请号：US737364
申请日：1985-05-23
申请人： Robert G. Brault , Leroy J. Miller
发明人： Robert G. Brault , Leroy J. Miller
CPC分类号： G03F7/325 , Y10S430/155
摘要： The invention is directed to a process for preparation of a negative resist configuration on a siliceous substrate.A negative resist polymer is bonded to the siliceous substrate using an intermediary interlayer of silane between the substrate and the resist polymer. The silane is applied to the siliceous substrate and the silane-coated surface is heated to accomplish bonding; the resist polymer is then applied as an overlay on the silane-coated surface and the resist polymer surface is irradiated to form an image therein and simultaneously to bond the resist polymer image to the silane-coated surface.The resist image is then developed using a developer solvent to remove resist polymer which was not irradiated, and the developer solvent is followed by a rinse solvent which, in one aspect, substantially eliminates any snaky lines or edges on the developed resist image, or in another aspect, by utilizing multiple rinses to accomplish the same and to also remove substantially all of the residual developer solvent trapped within the developed resist image, thus reducing swelling and returning the initial resist to about the same dimensions as the image prior to development.
摘要翻译： 本发明涉及一种在硅质基材上制备负型抗蚀剂构型的方法。 在衬底和抗蚀剂聚合物之间使用硅烷中间层将负性抗蚀剂聚合物结合到硅质衬底上。 将硅烷施加到硅质基底上，并且将硅烷涂覆的表面加热以实现粘合; 然后将抗蚀剂聚合物作为覆盖层涂覆在硅烷涂覆的表面上，并且抗蚀剂聚合物表面被照射以在其中形成图像，同时将抗蚀剂聚合物图像粘合到硅烷涂覆的表面。 然后使用显影剂溶剂显影抗蚀剂图像以除去未照射的抗蚀剂聚合物，并且显影剂溶剂之后是漂洗溶剂，其一方面基本上消除了显影的抗蚀剂图像上的任何碎片线或边缘，或 另一方面，通过利用多次冲洗来完成相同的操作，并且基本上除去捕获在显影的抗蚀剂图像内的所有剩余的显影剂溶剂，从而减少起始抗蚀剂的膨胀并将其返回到与显影前的图像大致相同的尺寸。
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公开(公告)号：US4596761A
公开(公告)日：1986-06-24
申请号：US718209
申请日：1985-04-03
申请人： Robert G. Brault
发明人： Robert G. Brault
CPC分类号： G03F7/265 , G03F7/36 , Y10S430/143 , Y10S430/168
摘要： This invention provides a process, and delineates typical materials to be used in that process, which enables the use of a precision radiation source to produce a microcircuit resist image accurate to a few micrometers or even fractions of a micrometer. In addition, the process of the invention provides for the dry development of this image, thus insuring the ability to create a finished resist structure exhibiting the same accuracy in dimensions.Specifically, the invention provides a process in which a positive or negative resist polymer is irradiated under low pressure using a precision radiation source such as an electron beam, masked ion beam, or focused ion beam to generate organic free radicals. After irradiation, the reactive resist polymer is exposed to oxygen or air to create peroxides or hydroperoxides. The peroxides or hydroperoxides are later thermally decomposed to generate organic free radicals which can be reacted with a silicon-containing organic molecule which contains at least one vinyl or other functional group capable of reacting with the organic free radical. The resulting copolymer resist then includes a latent image containing silicon, which can be dry developed using plasma or reactive ion etching techniques.In another embodiment of this invention, an intermediary non-silicon-containing organic molecule is grafted to the active sites on the resist polymer. The organic molecule is then reacted with a silicon-containing compound, so that it becomes a grafting intermediary between the initial polymeric resist and the silicon-containing compound.
摘要翻译： 本发明提供了一种方法，并描绘了在该方法中使用的典型材料，其使得能够使用精确的辐射源来产生精确到几微米甚至几微米的微电路抗蚀剂图像。 此外，本发明的方法提供了该图像的干燥显影，从而确保了产生具有相同的尺寸精度的成品抗蚀剂结构的能力。 具体地说，本发明提供一种使用电子束，掩蔽离子束或聚焦离子束等精密辐射源在低压下照射正极或负极的抗蚀剂聚合物以产生有机自由基的方法。 照射后，反应性抗蚀剂聚合物暴露于氧气或空气中以产生过氧化物或氢过氧化物。 过氧化物或氢过氧化物随后被热分解以产生有机自由基，其可以与含有至少一个能够与有机自由基反应的乙烯基或其它官能团的含硅有机分子反应。 所得到的共聚物抗蚀剂包括含有硅的潜像，其可以使用等离子体或反应离子蚀刻技术干燥显影。 在本发明的另一个实施方案中，将中间非含硅有机分子接枝到抗蚀剂聚合物上的活性位点。 然后将有机分子与含硅化合物反应，使其成为初始聚合物抗蚀剂和含硅化合物之间的接枝中间体。
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4.发明授权
公开(公告)号：US4508812A
公开(公告)日：1985-04-02
申请号：US606506
申请日：1984-05-03
申请人： Robert G. Brault
发明人： Robert G. Brault
IPC分类号： G03F7/16 , G03C1/74 , G03F7/039 , G03F7/095 , G03F7/11 , H01L21/027 , H01L21/30 , H01L21/316
CPC分类号： G03F7/095 , G03F7/039 , G03F7/11 , Y10S430/136
摘要： Disclosed is a method of pretreating a semiconductor wafer so that a solution coating of a positive resist of poly(methacrylic anhydride) can be directly applied to the treated surface. A typical semiconductor wafer of silicon is first precoated with a thin layer of poly(t-butyl methacrylate) and then heated to convert the poly(t-butyl methacrylate) to the anhydride. The thickness of this anhydride-precursor layer is less than about 1,000 Angstroms. Next, there is applied to the surface of the precursor layer a solution of the poly(methacrylic anhydride) dissolved in, for example, dimethylacetamide, dimethylformamide, or N-methylprrolidione. Such solvents, which are not capable of adequately wetting the silicon surface directly, are capable of wetting the precursor layer comprising poly(methacrylic anhydride), thus ensuring a uniform deposit of poly(methacrylic anhydride) upon the treated surface of the wafer. After the solution has been applied to the treated wafer, the solvent is removed by evaporation to form a uniform solution-deposited poly(methacrylic anhydride) layer having a thickness which ranges from about 2,000 Angstroms to about 20,000 Angstroms.
摘要翻译： 公开了一种对半导体晶片进行预处理的方法，使得可以将直接施加于被处理表面的聚（甲基丙烯酸酐）的正型抗蚀剂的溶液涂布。 硅的典型半导体晶片首先用聚（甲基丙烯酸叔丁酯）薄层预涂，然后加热以将聚（甲基丙烯酸叔丁酯）转化为酸酐。 该酸酐前体层的厚度小于约1,000埃。 接下来，将溶解在例如二甲基乙酰胺，二甲基甲酰胺或N-甲基吡咯烷酮中的聚（甲基丙烯酸酐）溶液施加到前体表面。 不能直接使硅表面充分润湿的这些溶剂能够润湿包含聚（甲基丙烯酸酐）的前体层，从而确保聚（甲基丙烯酸酐）在经处理的晶片表面上的均匀沉积。 在将溶液施加到经处理的晶片之后，通过蒸发除去溶剂，以形成均匀的溶液沉积的聚（甲基丙烯酸酐）层，其厚度范围为约2000埃至约20,000埃。
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公开(公告)号：US4665009A
公开(公告)日：1987-05-12
申请号：US628948
申请日：1984-07-10
申请人： Robert G. Brault
发明人： Robert G. Brault
CPC分类号： G03F7/325
摘要： The invention is directed to a method for obtaining a developer solvent for radiation-sensitive negative resists which are used in lithographic processes for the production of electronic microchips.The negative resist polymer is applied to the surface of the microchip substrate directly, or through an appropriate bonding agent layer, in any conventional manner suitable to the particular polymer. Once the resist polymer coating is obtained on the substrate, the resist polymer is irradiated using a suitable radiation source to obtain a latent image therein. The latent image exists within the polymeric resist coating in the form of crosslinked polymer surrounded by areas of nonirradiated, non-crosslinked polymer which must be removed in order to develop the image, thus producing the desired resist pattern on the substrate.Wet development of the image requires the use of solvents capable of dissolving away the non-crosslinked polymer while leaving a substantially undisturbed, undistorted crosslinked polymer image upon the substrate.The present invention provides for use of a developer solvent comprised of a mixture of organic compounds, each of which, when applied singly, acts as a nonsolvent for such non-crosslinked polymer, but which, when applied as a mixture, works as a solvent.Images developed using the developer solvents of the present invention are superior to images produced using development processes of the prior art in that swelling, profile distortion, surface erosion and line irregularity of the developed image are substantially eliminated.
摘要翻译： 本发明涉及一种用于获得用于生产电子微芯片的光刻工艺中的用于辐射敏感的负性抗蚀剂的显影剂溶剂的方法。 将负性抗蚀剂聚合物以适合于特定聚合物的任何常规方式直接或通过适当的粘结剂层施加到微芯片衬底的表面上。 一旦在基底上获得抗蚀剂聚合物涂层，使用合适的辐射源照射抗蚀剂聚合物，以在其中获得潜像。 潜像位于聚合物抗蚀剂涂层内，以交联聚合物的形式包围，该区域被非辐照的非交联聚合物包围，该区域必须被去除以便显影，从而在基底上产生所需的抗蚀剂图案。 图像的湿发展需要使用能够溶解掉非交联聚合物的溶剂，同时在基材上留下基本上未受干扰的未失真的交联聚合物图像。 本发明提供了使用由有机化合物的混合物组成的显影剂溶剂，每种有机化合物当单独使用时，作为非交联聚合物的非溶剂，但当以混合物的形式用作溶剂时 。 使用本发明的显影剂溶剂显影的图像优于使用现有技术的显影方法生产的图像，因为基本上消除了显影图像的溶胀，轮廓变形，表面侵蚀和线不规则。
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公开(公告)号：US4535054A
公开(公告)日：1985-08-13
申请号：US491636
申请日：1983-05-05
申请人： Robert G. Brault , Leroy J. Miller
发明人： Robert G. Brault , Leroy J. Miller
CPC分类号： G03F7/0751 , G03F7/325
摘要： The invention is directed to a process for preparation of a negative resist configuration on a siliceous substrate.A negative resist polymer is bonded to the siliceous substrate using an intermediary interlayer of silane between the substrate and the resist polymer. The silane is applied to the siliceous substrate and the silane-coated surface is heated to accomplish bonding; the resist polymer is then applied as an overlay on the silane-coated surface and the resist polymer surface is irradiated to form an image therein and simultaneously to bond the resist polymer image to the silane-coated surface.The resist image is then developed using a developer solvent to remove resist polymer which was not irradiated, and the developer solvent is followed by a rinse solvent which, in one aspect, substantially eliminates any snaky lines or edges on the developed resist image, or in another aspect, by utilizing multiple rinses to accomplish the same and to also remove substantially all of the residual developer solvent trapped within the developed resist image, thus reducing swelling and returning the initial resist to about the same dimensions as the image prior to development.
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公开(公告)号：US4474869A
公开(公告)日：1984-10-02
申请号：US417979
申请日：1982-09-14
申请人： Robert G. Brault , Leroy J. Miller
发明人： Robert G. Brault , Leroy J. Miller
CPC分类号： G03F7/038 , Y10S430/167
摘要： Negative working resists, prepared from poly(vinylpyridine) polymers which exhibit good sensitivities to 20 keV electron beam radiation, are disclosed. The poly(vinylpyridine) polymers of this invention may contain alkyl substituents on the pyridine rings in ortho, meta or para positions with respect to the nitrogen atom within said ring.
摘要翻译： 公开了对对20keV电子束辐射具有良好的敏感性的聚（乙烯基吡啶）聚合物制备的负性抗蚀剂。 本发明的聚（乙烯基吡啶）聚合物可以在相对于所述环内的氮原子的邻位，间位或对位的吡啶环上含有烷基取代基。
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公开(公告)号：US4981778A
公开(公告)日：1991-01-01
申请号：US885337
申请日：1986-07-11
申请人： Robert G. Brault
发明人： Robert G. Brault
CPC分类号： G03F7/094 , G03F7/0757
摘要： A method for providing a high temperature imaging resist layer for use in a multilayer resist system. A relatively thick planarizing resist layer is coated onto a suitable substrate to provide a planarizing resist layer having a planar surface. A relatively thin layer of a solvent soluble polysilsesquioxane polymer resist is applied to the planar surface to form an imaging resist which remains solvent soluble at temperatures up to 250.degree. C. The hydroxyl or alkoxy content of the polysilsesquioxane must be 0.05 weight percent or less in order to prevent cross linking of the polysilsesquioxane. The polysiloxane polymer resist is prepared by hydrolizing and polymerizing trichlorosilanes having the formula RSiCl.sub.3 where R is methyl, phenyl, vinyl, n-butyl, t-butyl, chlorophenyl, or chloromethyl-phenyl. The hydroxyl content of the polysilsesquioxane is reduced to 0.05 weight percent by capping the polymer with monoreactive silanes. The polysiloxane imaging resist is designed for use in high temperature electron beam and ion beam lithography.
摘要翻译： 一种用于提供用于多层抗蚀剂体系的高温成像抗蚀剂层的方法。 将相对厚的平坦化抗蚀剂层涂覆到合适的基底上以提供具有平坦表面的平坦化抗蚀剂层。 将相对薄的溶剂可溶性聚倍半硅氧烷聚合物抗蚀剂层施加到平面表面以形成在高达250℃的温度下保持溶剂可溶性的成像抗蚀剂。聚倍半硅氧烷的羟基或烷氧基含量必须在0.05重量％以下 以防止聚倍半硅氧烷的交联。 聚硅氧烷聚合物抗蚀剂通过水解和聚合具有式RSiCl 3的三氯硅烷来制备，其中R是甲基，苯基，乙烯基，正丁基，叔丁基，氯苯基或氯甲基 - 苯基。 通过用单反应硅烷封端聚合物，聚倍半硅氧烷的羟基含量降低至0.05重量％。 聚硅氧烷成像抗蚀剂设计用于高温电子束和离子束光刻。
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公开(公告)号：US4777119A
公开(公告)日：1988-10-11
申请号：US1058
申请日：1987-01-07
申请人： Robert G. Brault , Leroy J. Miller
发明人： Robert G. Brault , Leroy J. Miller
CPC分类号： G03F7/322
摘要： The present invention relates to a process for forming an image with a positive resist, said process involves the steps of forming on a substrate a positive resist layer of poly(methacrylic anhydride). The resist layer baked at a temperature of 200.degree. C. to 350.degree. C. and thereafter irradiated with a pedetermined pattern of ionizing radiation. The irradiated area is then developed utilizing a developer solvent that is composed of solution of a base selected from the group consisting of alkali metal hydrozides, ammonium hydroxides (including quarternary ammonium hydroxides), alkali metal alkoxides and alkali metal carbonates; and a hydroxylic solvent selected from the group consisting of branched or straight chain alcohols having a C.sub.1 -C.sub.12 carbon content and water or mixtures thereof; and rinsing the resist with the same solvent selected above.
摘要翻译： 本发明涉及用正性抗蚀剂形成图像的方法，所述方法包括在基底上形成聚（甲基丙烯酸酐）的正性抗蚀剂层的步骤。 抗蚀剂层在200℃至350℃的温度下烘烤，然后用电离辐射的预定图案照射。 然后利用由碱金属氢化锌，氢氧化铵（包括季铵氢氧化物），碱金属醇盐和碱金属碳酸盐组成的组中的碱的溶液组成的显影剂溶剂显影照射区域; 和选自具有C1-C12碳含量的支链或直链醇和水或其混合物的羟基溶剂; 并用与上述相同的溶剂冲洗抗蚀剂。
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