摘要:
A method and system to facilitate paging of one or more segments of a logical-to-physical (LTP) address mapping structure, such as a table, to a non-volatile memory, such as a NAND flash memory. The LTP address mapping structure is part of an indirection system map associated with the non-volatile memory. By allowing one or more segments of the LTP address mapping structure to be paged to the non-volatile memory, the amount of volatile memory required to store the LTP address mapping structure is reduced while maintaining the benefits of the LTP address mapping structure. One or more segments of the logical to physical address mapping structure may be cached in volatile memory, and a size of each segment may be the same as or a multiple of a page size of the NAND flash memory. A lookup or segment table may be provided to indicate a location of each segment and may be optimized for sequential physical addresses.
摘要:
A method and system to facilitate paging of one or more segments of a logical-to-physical (LTP) address mapping structure to a non-volatile memory. The LTP address mapping structure is part of an indirection system map associated with the non-volatile memory in one embodiment of the invention. By allowing one or more segments of the LTP address mapping structure to be paged to the non-volatile memory, the amount of volatile memory required to store the LTP address mapping structure is reduced while maintaining the benefits of the LTP address mapping structure in one embodiment of the invention.
摘要:
A technique includes performing a plurality of write operations to store data in different physical memory locations. Each of the physical memory locations are associated with a logical address that is shared in common among the physical addresses. The technique includes storing sequence information in the physical memory locations to indicate which one of the write operations occurred last.
摘要:
The write disturb that occurs in polymer memories may be reduced by writing back data after a read in a fashion which offsets any effect on the polarity of bits in bit lines associated with the addressed bit. For example, each time the data is written back, its polarity may be alternately changed. In another embodiment, the polarity may be randomly changed.
摘要:
A method is described that entails receiving an address for a read or write transaction to a non volatile system memory device. The method further involves determining a usage statistic of the memory device for a set of addresses of which the address is a member. The method further involves determining a characteristic of a signal to be applied to the memory device for the read or write transaction based on the usage statistic. The method further involves generating a signal having the characteristic to perform the read or write transaction.
摘要:
A method is described that entails receiving an address for a read or write transaction to a non volatile system memory device. The method further involves determining a usage statistic of the memory device for a set of addresses of which the address is a member. The method further involves determining a characteristic of a signal to be applied to the memory device for the read or write transaction based on the usage statistic. The method further involves generating a signal having the characteristic to perform the read or write transaction.
摘要:
The write disturb that occurs in polymer memories may be reduced by writing back data after a read in a fashion which offsets any effect on the polarity of bits in bit lines associated with the addressed bit. For example, each time the data is written back, its polarity may be alternately changed. In another embodiment, the polarity may be randomly changed.
摘要:
Write operations store data in different physical memory locations. Each of the physical memory locations are associated with a logical address that is shared in common among the physical addresses. Sequence information stored in the physical memory location indicates which one of the write operations occurred last. The available erased memory location can be split into a list of erased memory locations available to be used and a list of erased memory locations not available to be used. Then, on a failure, only the list of erased memory locations available to be used needs to be analyzed to reconstruct the consumption states of memory locations.
摘要:
The above-described methods and computer system describe the use of dynamic addressing, lazy relocations and erases, and page state information to provide fast disk caching and solid state disk applications using solid-state nonvolatile memories. The approach reduces write-latencies for demand requests, as well as the number of erase cycles on erase blocks.
摘要:
An apparatus and method to reduce the initialization time of a system is disclosed. In one embodiment, upon a cache line update, metadata associated with the cache line is stored in a distributed format in non-volatile memory with its associated cache line. Upon indication of an expected shut down, metadata is copied from volatile memory and stored in non-volatile memory in a packed format. In the packed format, multiple metadata associated with multiple cache lines are stored together in, for example, a single memory block. Thus, upon system power up, if the system was shut down in an expected manner, metadata may be restored in volatile memory from the metadata stored in the packed format, with a significantly reduced boot time over restoring metadata from the metadata stored in the distributed format.