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公开(公告)号：US20110129948A1
公开(公告)日：2011-06-02
申请号：US12592735
申请日：2009-12-02
CPC分类号： G03F9/7084 , G03F9/7065 , G03F9/7076 , G03F9/708 , G03F9/7088 , H01L33/22
摘要： A method of aligning a wafer when lithographically fabricating a light-emitting diode (LED). The method includes forming on the wafer at least one roughened alignment mark having a root-mean-square (RMS) surface roughness σS. The roughened alignment mark is formed as a consequence of forming a plasma etch to roughen a LED surface on which the wafer alignment mark resides. The method also includes imaging the at least one roughened wafer alignment mark with alignment light having a wavelength λA that is in the range from about 2 σS to about 8 σS. The method also includes comparing the detected image to an alignment reference to establish wafer alignment. Once wafer alignment is established, p-contacts and n-contacts can be formed on the LED upper surface in their proper locations.
摘要翻译： 在光刻制造发光二极管（LED）时对准晶片的方法。 该方法包括在晶片上形成至少一个具有均方根（RMS）表面粗糙度S的粗糙对准标记。 作为形成等离子体蚀刻以粗糙化晶片对准标记所在的LED表面的结果，形成粗糙化的对准标记。 该方法还包括用波长λA为约2至约8微米的对准光对至少一个粗糙化的晶片对准标记进行成像。 该方法还包括将检测到的图像与对准基准进行比较以建立晶片对准。 一旦晶圆对准建立，p型触点和n型触点就可以在它们正确位置的LED上表面上形成。
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公开(公告)号：US08781213B2
公开(公告)日：2014-07-15
申请号：US13302308
申请日：2011-11-22
CPC分类号： G03F9/7084 , G03F9/7065 , G03F9/7076 , G03F9/708 , G03F9/7088 , H01L33/22
摘要： An alignment system for aligning a wafer when lithographically fabricating LEDs having an LED wavelength λLED is disclosed. The system includes the wafer. The wafer has a roughened alignment mark with a root-mean-square (RMS) surface roughness σS. The system has a lens configured to superimpose an image of the reticle alignment mark with an image of the roughened alignment mark. The roughened alignment marked image is formed with alignment light having a wavelength λA that is in the range from about 2σS to about 8σS. An image sensor detects the superimposed image. An image processing unit processes the detected superimposed image to measure an alignment offset between the wafer and the reticle.
摘要翻译： 公开了一种用于在光刻制造具有LED波长λLED的LED的晶片时对准晶片的对准系统。 该系统包括晶片。 晶片具有粗糙的对准标记，均方根（RMS）表面粗糙度S。 该系统具有配置为用掩模版对准标记的图像叠加掩模版对准标记的图像的透镜。 粗糙的对准标记图像由波长λA为约2＆Sgr; S至约8＆Sgr; S的对准光形成。 图像传感器检测叠加图像。 图像处理单元处理检测到的叠加图像以测量晶片和标线片之间的对准偏移。
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公开(公告)号：US08088633B2
公开(公告)日：2012-01-03
申请号：US12592735
申请日：2009-12-02
IPC分类号： G01R31/26 , H01L21/66 , H01L21/00 , G06K9/00 , H01L23/544 , B23K26/00 , B23K26/02 , B23K26/08 , F27D11/00
CPC分类号： G03F9/7084 , G03F9/7065 , G03F9/7076 , G03F9/708 , G03F9/7088 , H01L33/22
摘要： A method of aligning a wafer when lithographically fabricating a light-emitting diode (LED). The method includes forming on the wafer at least one roughened alignment mark having a root-mean-square (RMS) surface roughness σS. The roughened alignment mark is formed as a consequence of forming a plasma etch to roughen a LED surface on which the wafer alignment mark resides. The method also includes imaging the at least one roughened wafer alignment mark with alignment light having a wavelength λA that is in the range from about 2σS to about 8σS. The method also includes comparing the detected image to an alignment reference to establish wafer alignment. Once wafer alignment is established, p-contacts and n-contacts can be formed on the LED upper surface in their proper locations.
摘要翻译： 在光刻制造发光二极管（LED）时对准晶片的方法。 该方法包括在晶片上形成至少一个具有均方根（RMS）表面粗糙度S的粗糙对准标记。 作为形成等离子体蚀刻以粗糙化晶片对准标记所在的LED表面的结果，形成粗糙化的对准标记。 该方法还包括用波长λA为约2至约8微米的对准光对至少一个粗糙化的晶片对准标记进行成像。 该方法还包括将检测到的图像与对准基准进行比较以建立晶片对准。 一旦晶圆对准建立，p型触点和n型触点就可以在它们正确位置的LED上表面上形成。
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公开(公告)号：US20120062726A1
公开(公告)日：2012-03-15
申请号：US13302308
申请日：2011-11-22
IPC分类号： H04N7/18
CPC分类号： G03F9/7084 , G03F9/7065 , G03F9/7076 , G03F9/708 , G03F9/7088 , H01L33/22
摘要： An alignment system for aligning a wafer when lithographically fabricating LEDs having an LED wavelength λLED is disclosed. The system includes the wafer. The wafer has a roughened alignment mark with a root-mean-square (RMS) surface roughness σS. The system has a lens configured to superimpose an image of the reticle alignment mark with an image of the roughened alignment mark. The roughened alignment marked image is formed with alignment light having a wavelength λA that is in the range from about 2σS to about 8σS. An image sensor detects the superimposed image. An image processing unit processes the detected superimposed image to measure an alignment offset between the wafer and the reticle.
摘要翻译： 公开了一种用于在光刻制造具有LED波长λLED的LED的晶片时对准晶片的对准系统。 该系统包括晶片。 晶片具有粗糙的对准标记，均方根（RMS）表面粗糙度S。 该系统具有配置为用掩模版对准标记的图像叠加掩模版对准标记的图像的透镜。 粗糙的对准标记图像由波长λA为约2＆Sgr; S至约8＆Sgr; S的对准光形成。 图像传感器检测叠加图像。 图像处理单元处理检测到的叠加图像以测量晶片和标线片之间的对准偏移。
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公开(公告)号：US08796053B2
公开(公告)日：2014-08-05
申请号：US12928862
申请日：2010-12-21
CPC分类号： H01L33/22 , G03F1/26 , G03F7/70283 , G03F7/703 , H01L33/007 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： Photolithographic methods of forming a roughened surface for an LED to improve LED light emission efficiency are disclosed. The methods include photolithographically imaging a phase-shift mask pattern onto a photoresist layer of a substrate to form therein a periodic array of photoresist features. The roughened substrate surface is created by processing the exposed photoresist layer to form a periodic array of substrate posts in the substrate surface. A p-n junction multilayer structure is then formed atop the roughened substrate surface to form the LED. The periodic array of substrate posts serve as scatter sites that improve the LED light emission efficiency as compared to the LED having no roughened substrate surface. The use of the phase-shift mask enables the use of affordable photolithographic imaging at a depth of focus suitable for non-flat LED substrates while also providing the needed resolution to form the substrate posts.
摘要翻译： 公开了形成LED的粗糙表面以提高LED发光效率的光刻方法。 所述方法包括将相移掩模图案光刻成像到基板的光致抗蚀剂层上以在其中形成光致抗蚀剂特征的周期性阵列。 通过处理暴露的光致抗蚀剂层以在衬底表面中形成周期性的衬底柱阵列来产生粗糙化的衬底表面。 然后在粗糙化的基板表面上形成p-n结多层结构以形成LED。 与没有粗糙化的基板表面的LED相比，衬底柱的周期性阵列用作提高LED发光效率的散射点。 使用相移掩模使得可以在适合于非平坦LED基板的聚焦深度下使用经济的光刻成像，同时还提供形成基板柱的所需分辨率。
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公开(公告)号：US20120153323A1
公开(公告)日：2012-06-21
申请号：US12928862
申请日：2010-12-21
CPC分类号： H01L33/22 , G03F1/26 , G03F7/70283 , G03F7/703 , H01L33/007 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： Photolithographic methods of forming a roughened surface for an LED to improve LED light emission efficiency are disclosed. The methods include photolithographically imaging a phase-shift mask pattern onto a photoresist layer of a substrate to form therein a periodic array of photoresist features. The roughened substrate surface is created by processing the exposed photoresist layer to form a periodic array of substrate posts in the substrate surface. A p-n junction multilayer structure is then formed atop the roughened substrate surface to form the LED. The periodic array of substrate posts serve as scatter sites that improve the LED light emission efficiency as compared to the LED having no roughened substrate surface. The use of the phase-shift mask enables the use of affordable photolithographic imaging at a depth of focus suitable for non-flat LED substrates while also providing the needed resolution to form the substrate posts.
摘要翻译： 公开了形成LED的粗糙表面以提高LED发光效率的光刻方法。 所述方法包括将相移掩模图案光刻成像到基板的光致抗蚀剂层上以在其中形成光致抗蚀剂特征的周期性阵列。 通过处理暴露的光致抗蚀剂层以在衬底表面中形成周期性的衬底柱阵列来产生粗糙化的衬底表面。 然后在粗糙化的基板表面上形成p-n结多层结构以形成LED。 与没有粗糙化的基板表面的LED相比，衬底柱的周期性阵列用作提高LED发光效率的散射点。 使用相移掩模使得可以在适合于非平坦LED基板的聚焦深度下使用经济的光刻成像，同时还提供形成基板柱的所需分辨率。
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公开(公告)号：US08323857B2
公开(公告)日：2012-12-04
申请号：US13066804
申请日：2011-04-25
申请人： Robert L. Hsieh , Warren W. Flack
发明人： Robert L. Hsieh , Warren W. Flack
IPC分类号： G03F1/36
摘要： A phase-shift mask having a checkerboard array and a surrounding sub-resolution assist phase pattern. The checkerboard array comprises alternating phase-shift regions R that have a relative phase difference of 180 degrees. The sub-resolution assist phase regions R′ reside adjacent corresponding phase-shift regions R and have a relative phase difference of 180 degrees thereto. The sub-resolution assist phase regions R′ are configured to mitigate undesirable edge effects when photolithographically forming photoresist features. Method of forming LEDs using the phase-shift mask are also disclosed.
摘要翻译： 具有棋盘阵列和周围的子分辨率辅助相位图案的相移掩模。 棋盘阵列包括具有180度的相对相位差的交替相移区域R. 副分辨率辅助相位区域R'与相应的相移区域R相邻并且具有180度的相对相位差。 辅助分辨率辅助相位区域R'被配置为当光刻形成光致抗蚀剂特征时减轻不期望的边缘效应。 还公开了使用相移掩模形成LED的方法。
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公开(公告)号：US20120156814A1
公开(公告)日：2012-06-21
申请号：US13066804
申请日：2011-04-25
申请人： Robert L. Hsieh , Warren W. Flack
发明人： Robert L. Hsieh , Warren W. Flack
摘要： A phase-shift mask having a checkerboard array and a surrounding sub-resolution assist phase pattern. The checkerboard array comprises alternating phase-shift regions R that have a relative phase difference of 180 degrees. The sub-resolution assist phase regions R′ reside adjacent corresponding phase-shift regions R and have a relative phase difference of 180 degrees thereto. The sub-resolution assist phase regions R′ are configured to mitigate undesirable edge effects when photolithographically forming photoresist features. Method of forming LEDs using the phase-shift mask are also disclosed.
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