摘要:
A storage device includes a storage medium and a probe to form perturbations in the storage medium. The storage device further includes a circuit to cause heating of the probe to perform an access operation, the circuit to compensate for variations in a temperature of the probe in performing the access operation.
摘要:
A read/write arrangement for a contact probe storage arrangement or the like, has a cantilever disposed with a medium which is movable relative to the cantilever. A device which is associated with one of the cantilever and the medium is configured to be responsive to changes in electrical field between the medium and the cantilever caused by a change in distance between the medium and the cantilever. A heater is disposed on the cantilever for heating the medium and for inducing localized topographical changes which represent bits of data. A circuit electrically interconnects both of the device and the heater.
摘要:
A read/write arrangement for a contact probe storage arrangement or the like, has a cantilever disposed with a medium which is movable relative to the cantilever; a device associated with one of the cantilever and the medium which is configured to be responsive to changes in electrical field between the medium and the cantilever caused by a change in distance between the medium and the cantilever; a heater disposed on the cantilever for heating the medium and for inducing localized topographical changes which represent bits of data; and a circuit which electrically interconnects both of the device and the heater.
摘要:
A highly parallel data storage chip device providing a plurality of parallel data tracks allocated into separate physical groups upon a data storage medium. A controller establishes logical groups of data tracks located in different physical groups. A servo track provides tracking information for a plurality of read/write devices that move relative to the length of each data track, thereby permitting parallel data transfer between the read/write devices and the distributed data tracks of the logical group.
摘要:
A method of storing data in a storage device having a probe to form perturbations in a storage medium of the storage device includes receiving input write data bits and encoding the input write data bits to form coded write data bits. Perturbations are formed in the storage medium by contacting a probe to the storage medium, the perturbations corresponding to the coded write data bits, wherein the coded write data bits provide a generally uniform distribution of the perturbations on the storage medium.
摘要:
A method for performing a read operation from a memory cell in a memory cell string is provided. The method includes applying a constant current across the memory cell string, measuring a first voltage across the memory cell string, writing the memory cell to a first state, measuring a second voltage across the memory cell string, and determining whether the first voltage differs from the second voltage.
摘要:
A method for determining memory element values may include: selecting a column of interest containing a desired memory element, disabling the desired memory element, measuring a first current provided to the column of interest, adjusting measurement circuitry to compensate for skew introduced by undesired memory elements, enabling the desired memory element, and measuring a second current provided to the column of interest.
摘要:
A storage device includes a probe and a storage medium having a plurality of storage cells. The probe is able to form a first structure and a second structure in the storage medium, where a first storage cell containing a transition between the first structure and a second structure contains a data bit having a first state, and where a second storage cell not including a transition between the first structure and the second structure contains a data bit having a second state.
摘要:
A method for determining the memory element values is disclosed. In some embodiments the method may include: selecting a column of interest containing a desired memory element, disabling the desired memory element, measuring a first current provided to the column of interest, adjusting measurement circuitry to compensate for skew introduced by undesired memory elements, enabling the desired memory elements, and measuring a second current provided to the column of interest.
摘要:
A storage device includes a probe and a storage medium, where the probe is adapted to form perturbations in the storage medium. A read circuit detects a storage state, with the read circuit to receive a first signal representing interaction between the probe and the storage medium. The read circuit derives a second signal based on the first signal, the second signal being a second derivative of the first signal. The read circuit is adapted to detect the storage state based on the second signal.