Corrosion inhibitor additives to prevent semiconductor device bond-pad corrosion during wafer dicing operations
    1.
    发明授权
    Corrosion inhibitor additives to prevent semiconductor device bond-pad corrosion during wafer dicing operations 有权
    用于防止晶圆切片操作期间半导体器件接合焊盘腐蚀的防腐蚀添加剂

    公开(公告)号:US07855130B2

    公开(公告)日:2010-12-21

    申请号:US10249576

    申请日:2003-04-21

    IPC分类号: H01L21/78 H01L21/46

    摘要: An improved method of dicing a semiconductor wafer which substantially reduces or eliminates corrosion of copper-containing, aluminum bonding pads. The method involves continuously contacting the bonding pads with deionized water and an effective amount of a copper corrosion inhibiting agent, most preferably benzotriazole. Also disclosed, is an improved apparatus for dicing a wafer, in which a copper corrosion inhibiting agent is included in the cooling system for cooling the dicing blade.

    摘要翻译: 一种切割半导体晶片的改进方法,其基本上减少或消除含铜铝键合焊盘的腐蚀。 该方法包括使接合垫与去离子水和有效量的铜腐蚀抑制剂,最优选苯并三唑连续接触。 还公开了一种用于切割晶片的改进的设备,其中在用于冷却切割刀片的冷却系统中包括铜腐蚀抑制剂。

    System and device for thinning wafers that have contact bumps
    2.
    发明授权
    System and device for thinning wafers that have contact bumps 有权
    具有接触凸块的用于减薄晶片的系统和装置

    公开(公告)号:US07722446B2

    公开(公告)日:2010-05-25

    申请号:US11533609

    申请日:2006-10-17

    IPC分类号: B24B55/04

    CPC分类号: H01L21/78

    摘要: In accordance with the foregoing objects and advantages, the present invention provides a fabrication device that may be used during the grinding operation of the fabrication process. The fabrication device comprises a socket plate that includes a plurality of cavities formed therein that correspond in position and number to the solder (or other conductive material) bumps formed on the front surface of a product wafer.

    摘要翻译: 根据上述目的和优点,本发明提供了可在制造过程的磨削操作期间使用的制造装置。 该制造装置包括插座板,该插座板包括形成在其中的多个空腔,其位置和数量与形成在产品晶片的前表面上的焊料(或其它导电材料)凸起相对应。

    Tape removal in semiconductor structure fabrication
    3.
    发明授权
    Tape removal in semiconductor structure fabrication 失效
    半导体结构制造中的磁带去除

    公开(公告)号:US07572739B2

    公开(公告)日:2009-08-11

    申请号:US10905914

    申请日:2005-01-26

    IPC分类号: H01L21/302 H01L21/461

    摘要: A semiconductor structure fabrication method for removing a tape physically attached to a device side of the semiconductor substrate by an adhesive layer of the tape, wherein the adhesive layer comprises an adhesive material. The method includes the step of submerging the tape in a liquid chemical comprising monoethanolamine or an alkanolamine for a pre-specified period of time sufficient to allow for a separation of the tape from the semiconductor substrate without damaging devices on the semiconductor substrate.

    摘要翻译: 一种半导体结构制造方法,用于通过所述带的粘合剂层去除物理地附接到所述半导体衬底的器件侧的带,其中所述粘合剂层包括粘合剂材料。 该方法包括将胶带浸入包含单乙醇胺或链烷醇胺的液体化学品中的步骤,其预定时间足以允许胶带从半导体衬底上分离而不损坏半导体衬底上的装置。