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    Etch apparatus
    1.
    发明授权
    Etch apparatus 有权
    蚀刻装置

    公开(公告)号：US07332054B2

    公开(公告)日：2008-02-19

    申请号：US10760896

    申请日：2004-01-20

    Applicant: Arne W. Ballantine ,  Scott A. Estes ,  Emily E. Fisch ,  Gary Milo ,  Ronald A. Warren

    Inventor： Arne W. Ballantine ,  Scott A. Estes ,  Emily E. Fisch ,  Gary Milo ,  Ronald A. Warren

    IPC: H01L21/00 ,  B05C3/00 ,  B05D45/00

    CPC classification number: H01L21/67086 ,  H01L21/31111 ,  H01L21/32134 ,  Y10S134/902

    Abstract: In a process using a hot phosphoric acid etchant (12) to etch silicon nitride on a semiconductor wafer (15) submerged in a tank (11) of the etchant (12), a recirculating path is established for the etchant (12). A porous filter (35) is coated with silicon nitride and installed in the recirculating path. As the etchant (12) in the recirculating path flows through the porous filter (35), the silicon nitride on the porous filter (35) dissolves into the etchant (12). In the tank (11), the silicon nitride dissolved in the etchant (12) significantly suppresses the etch of silicon dioxide on the semiconductor wafer (15), thereby enhancing the etch selectivity of the process. Monitoring and maintaining the concentration of the silicon nitride in the etchant (12) stabilizes the etch selectivity of the process.

    Abstract translation: 在使用热磷酸蚀刻剂（12）蚀刻浸没在蚀刻剂（12）的罐（11）中的半导体晶片（15）上的氮化硅的方法中，为蚀刻剂（12）建立再循环路径。 多孔过滤器（35）涂覆有氮化硅并且安装在再循环路径中。 当再循环路径中的蚀刻剂（12）流过多孔过滤器（35）时，多孔过滤器（35）上的氮化硅溶解到蚀刻剂（12）中。 在罐（11）中，溶解在蚀刻剂（12）中的氮化硅显着地抑制了半导体晶片（15）上的二氧化硅的蚀刻，从而提高了工艺的蚀刻选择性。 监测和维持蚀刻剂（12）中氮化硅的浓度稳定了工艺的蚀刻选择性。

    Low stress electrodeposition of gold for X-ray mask fabrication
    3.
    发明授权
    Low stress electrodeposition of gold for X-ray mask fabrication 失效
    用于X射线掩模制造的金属的低应力电沉积

    公开(公告)号：US5318687A

    公开(公告)日：1994-06-07

    申请号：US927700

    申请日：1992-08-07

    Applicant: Scott A. Estes ,  Thomas B. Faure ,  Steven C. Nash

    Inventor： Scott A. Estes ,  Thomas B. Faure ,  Steven C. Nash

    IPC: C25D3/48 ,  G03F1/22 ,  H01L21/027 ,  H01L21/30 ,  C25D13/00

    CPC classification number: G03F1/22 ,  C25D3/48

    Abstract: An electrodeposition process for producing gold masks for X-ray lithography of integrated circuits is disclosed. The process produces a gold layer of tightly controlled grain size and arsenic content which results in minimum stress in the gold film and therefore minimum distortion in the features produced from the mask. The process comprises (a) immersing a substrate in a solution containing from 6 to 9 grams of gold per liter and from 8 to 30 mg of arsenite per liter, and (b) passing an electric current having a current density of 1 to 5 mA per cm.sup.2 through the solution to cause electrodeposition of gold.

    Abstract translation: 公开了一种用于制造用于集成电路的X射线光刻的金掩模的电沉积工艺。 该过程产生严格控制的晶粒尺寸和砷含量的金层，其导致金膜中的最小应力，并因此导致由掩模产生的特征的最小变形。 该方法包括（a）将基底浸入含有6-9克金每升和8-30毫克亚砷酸盐/升的溶液中，和（b）使电流密度为1至5mA的电流 每cm 2通过溶液引起电沉积金。

    Corrosion inhibitor additives to prevent semiconductor device bond-pad corrosion during wafer dicing operations
    4.
    发明授权
    Corrosion inhibitor additives to prevent semiconductor device bond-pad corrosion during wafer dicing operations 有权
    用于防止晶圆切片操作期间半导体器件接合焊盘腐蚀的防腐蚀添加剂

    公开(公告)号：US07855130B2

    公开(公告)日：2010-12-21

    申请号：US10249576

    申请日：2003-04-21

    Applicant: Robert R Cadieux ,  Scott A Estes ,  Timothy C Krywanczyk

    Inventor： Robert R Cadieux ,  Scott A Estes ,  Timothy C Krywanczyk

    IPC: H01L21/78 ,  H01L21/46

    CPC classification number: H01L21/78 ,  B28D5/0076 ,  B28D5/022

    Abstract: An improved method of dicing a semiconductor wafer which substantially reduces or eliminates corrosion of copper-containing, aluminum bonding pads. The method involves continuously contacting the bonding pads with deionized water and an effective amount of a copper corrosion inhibiting agent, most preferably benzotriazole. Also disclosed, is an improved apparatus for dicing a wafer, in which a copper corrosion inhibiting agent is included in the cooling system for cooling the dicing blade.

    Abstract translation: 一种切割半导体晶片的改进方法，其基本上减少或消除含铜铝键合焊盘的腐蚀。 该方法包括使接合垫与去离子水和有效量的铜腐蚀抑制剂，最优选苯并三唑连续接触。 还公开了一种用于切割晶片的改进的设备，其中在用于冷却切割刀片的冷却系统中包括铜腐蚀抑制剂。

    Etch process and apparatus therefor
    7.
    发明授权
    Etch process and apparatus therefor 有权
    蚀刻工艺及其设备

    公开(公告)号：US06699400B1

    公开(公告)日：2004-03-02

    申请号：US09326514

    申请日：1999-06-04

    Applicant: Arne W. Ballantine ,  Scott A. Estes ,  Emily E. Fisch ,  Gary Milo ,  Ronald A. Warren

    Inventor： Arne W. Ballantine ,  Scott A. Estes ,  Emily E. Fisch ,  Gary Milo ,  Ronald A. Warren

    IPC: H01L2100

    CPC classification number: H01L21/67086 ,  H01L21/31111 ,  H01L21/32134 ,  Y10S134/902

    Abstract: In a process using a hot phosphoric acid etchant (12) to etch silicon nitride on a semiconductor wafer (15) submerged in a tank (11) of the etchant (12), a recirculating path is established for the etchant (12). A porous filter (35) is coated with silicon nitride and installed in the recirculating path. As the etchant (12) in the recirculating path flows through the porous filter (35), the silicon nitride on the porous filter (35) dissolves into the etchant (12). In the tank (11), the silicon nitride dissolved in the etchant (12) significantly suppresses the etch of silicon dioxide on the semiconductor wafer (15), thereby enhancing the etch selectivity of the process. Monitoring and maintaining the concentration of the silicon nitride in the etchant (12) stabilizes the etch selectivity of the process.

    Abstract translation: 在使用热磷酸蚀刻剂（12）蚀刻浸没在蚀刻剂（12）的罐（11）中的半导体晶片（15）上的氮化硅的方法中，为蚀刻剂（12）建立再循环路径。 多孔过滤器（35）涂覆有氮化硅并且安装在再循环路径中。 当再循环路径中的蚀刻剂（12）流过多孔过滤器（35）时，多孔过滤器（35）上的氮化硅溶解到蚀刻剂（12）中。 在罐（11）中，溶解在蚀刻剂（12）中的氮化硅显着地抑制了半导体晶片（15）上的二氧化硅的蚀刻，从而提高了工艺的蚀刻选择性。 监测和维持蚀刻剂（12）中氮化硅的浓度稳定了工艺的蚀刻选择性。

    Low stress electrodeposition of gold for x-ray mask fabrication
    8.
    发明授权
    Low stress electrodeposition of gold for x-ray mask fabrication 失效
    用于x射线掩模制造的金属的低应力电沉积

    公开(公告)号：US5459001A

    公开(公告)日：1995-10-17

    申请号：US207834

    申请日：1994-03-08

    Applicant: Scott A. Estes ,  Thomas B. Faure ,  Steven C. Nash

    Inventor： Scott A. Estes ,  Thomas B. Faure ,  Steven C. Nash

    IPC: C25D3/48 ,  G03F1/22 ,  H01L21/027 ,  H01L21/30 ,  G03F9/00

    CPC classification number: G03F1/22 ,  C25D3/48

    Abstract: An electrodeposition process for producing gold masks for X-ray lithography of integrated circuits is disclosed. The process produces a gold layer of tightly controlled grain size and arsenic content which results in minimum stress in the gold film and therefore minimum distortion in the features produced from the mask. The process comprises (a) immersing a substrate in a solution containing from 6 to 9 grams of gold per liter and from 8 to 30 mg of arsenite per liter, and (b) passing an electric current having a current density of 1 to 5 mA per cm.sup.2 through the solution to cause electrodeposition of gold.

    Abstract translation: 公开了一种用于制造用于集成电路的X射线光刻的金掩模的电沉积工艺。 该过程产生严格控制的晶粒尺寸和砷含量的金层，其导致金膜中的最小应力，并因此导致由掩模产生的特征的最小变形。 该方法包括（a）将基底浸入含有6-9克金每升和8-30毫克亚砷酸盐/升的溶液中，和（b）使电流密度为1至5mA的电流 每cm 2通过溶液引起电沉积金。

    Dilute acid rinse after develop for chrome etch
    9.
    发明授权
    Dilute acid rinse after develop for chrome etch 失效
    开发铬蚀刻后稀释酸冲洗

    公开(公告)号：US6162565A

    公开(公告)日：2000-12-19

    申请号：US178209

    申请日：1998-10-23

    Applicant: Virginia Chi-Chuen Chao ,  Scott A. Estes ,  Thomas B. Faure ,  Thomas M. Wagner

    Inventor： Virginia Chi-Chuen Chao ,  Scott A. Estes ,  Thomas B. Faure ,  Thomas M. Wagner

    IPC: G03F1/26 ,  G03F1/32 ,  G03F1/68 ,  G03F1/76 ,  G03F7/32 ,  G03F9/00

    CPC classification number: G03F1/32 ,  G03F1/26 ,  G03F1/76 ,  G03F1/80 ,  G03F7/32

    Abstract: A method for forming chrome photomasks and phase-shift masks without producing chrome opaque defects. The method involves rinsing the mask blank with dilute acid, preferably nitric or perchloric acid, during processing to form the photomask. When a dry etch is used to form the photomask, the mask blank is rinsed after wet development of the photoresist. When a wet etch is used to form the photomask, the mask blank is rinsed after the wet etch. This method decreases the number of defects per photomask as well as the mask-to-mask variation in the number of defects.

    Abstract translation: 用于形成铬光掩模和相移掩模的方法，而不产生铬不透明缺陷。 该方法包括在加工过程中用稀酸，优选硝酸或高氯酸冲洗掩模毛坯，以形成光掩模。 当使用干蚀刻来形成光掩模时，在湿光显影光致抗蚀剂之后，将掩模毛坯漂洗。 当使用湿蚀刻来形成光掩模时，在湿蚀刻之后，将掩模毛坯冲洗掉。 该方法减少每个光掩模的缺陷数量以及缺陷数量的掩模对掩模的变化。

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