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公开(公告)号：US08169692B2
公开(公告)日：2012-05-01
申请号：US12191909
申请日：2008-08-14
CPC分类号： G02B6/138 , G02B6/1221 , G02F1/395 , G02F2001/3548 , G02F2202/101 , G02F2202/20
摘要： A waveguide parametric device including a multi-mode waveguide having orientation layers formed in a propagation direction of a signal beam and a pump beam propagating down the waveguide. The orientation layers are oppositely oriented to provide non-linear coupling between the pump beam and the signal beam and have a periodicity that provides quasi-phase matching for a fundamental propagation mode, where the waveguide has a size to accommodate multi-mode wave propagation.
摘要翻译： 一种波导参数装置，包括具有沿信号光束的传播方向形成的取向层的多模波导和沿波导传播的泵浦光束。 取向层相反地定向以提供泵浦光束和信号光束之间的非线性耦合，并且具有为基本传播模式提供准相位匹配的周期性，其中波导具有适应多模波传播的尺寸。
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公开(公告)号：US20100328760A1
公开(公告)日：2010-12-30
申请号：US12191909
申请日：2008-08-14
CPC分类号： G02B6/138 , G02B6/1221 , G02F1/395 , G02F2001/3548 , G02F2202/101 , G02F2202/20
摘要： A waveguide parametric device including a multi-mode waveguide having orientation layers formed in a propagation direction of a signal beam and a pump beam propagating down the waveguide. The orientation layers are oppositely oriented to provide non-linear coupling between the pump beam and the signal beam and have a periodicity that provides quasi-phase matching for a fundamental propagation mode, where the waveguide has a size to accommodate multi-mode wave propagation.
摘要翻译： 一种波导参数装置，包括具有沿信号光束的传播方向形成的取向层的多模波导和沿波导传播的泵浦光束。 取向层相反地定向以提供泵浦光束和信号光束之间的非线性耦合，并且具有为基本传播模式提供准相位匹配的周期性，其中波导具有适应多模波传播的尺寸。
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公开(公告)号：US20090268761A1
公开(公告)日：2009-10-29
申请号：US12150415
申请日：2008-04-28
CPC分类号： H01S5/22 , H01L21/265 , H01L21/425 , H01L21/76825 , H01L45/165 , H01L51/105 , H01S5/02469 , H01S5/0287 , H01S5/0425 , H01S5/0655 , H01S5/1014 , H01S5/1053 , H01S5/1064 , H01S5/2036 , H01S2301/166
摘要： One embodiment is a wide stripe semiconductor waveguide, which is cleaved at a Talbot length thereof, the wide stripe semiconductor waveguide having facets with mirror coatings. A system provides for selective pumping the wide stripe semiconductor waveguide to create and support a Talbot mode. In embodiments according to the present method and apparatus the gain is patterned so that a single unique pattern actually has the highest gain and hence it is the distribution that oscillates.
摘要翻译： 一个实施例是宽条形半导体波导，其在其Talbot长度处被切割，宽条形半导体波导具有具有镜面涂层的刻面。 系统提供选择性地泵送宽条形半导体波导以创建和支持Talbot模式。 在根据本方法和装置的实施例中，增益被图案化，使得单个唯一图案实际上具有最高增益，因此是振荡的分布。
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公开(公告)号：US09368935B2
公开(公告)日：2016-06-14
申请号：US12150415
申请日：2008-04-28
CPC分类号： H01S5/22 , H01L21/265 , H01L21/425 , H01L21/76825 , H01L45/165 , H01L51/105 , H01S5/02469 , H01S5/0287 , H01S5/0425 , H01S5/0655 , H01S5/1014 , H01S5/1053 , H01S5/1064 , H01S5/2036 , H01S2301/166
摘要： One embodiment is a wide stripe semiconductor waveguide, which is cleaved at a Talbot length thereof, the wide stripe semiconductor waveguide having facets with mirror coatings. A system provides for selective pumping the wide stripe semiconductor waveguide to create and support a Talbot mode. In embodiments according to the present method and apparatus the gain is patterned so that a single unique pattern actually has the highest gain and hence it is the distribution that oscillates.
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公开(公告)号：US08432609B2
公开(公告)日：2013-04-30
申请号：US12690539
申请日：2010-01-20
CPC分类号： H01S5/50 , B82Y20/00 , H01S5/02264 , H01S5/02272 , H01S5/024 , H01S5/041 , H01S5/2027 , H01S5/34306
摘要： An edge photo-pumped semiconductor slab amplifier including an undoped semiconductor slab. A first gain structure is formed on an upper surface of the slab and a second gain structure is formed on a lower surface of the slab. The gain structures can be resonant periodic gain structures including a plurality of stacked quantum well layers. Confining layers are coupled to the gain structures to confine a signal beam within the semiconductor slab. Heat sinks are thermally coupled to the confining layers. Optical pump sources are provided along the side edges or coupled to the end edges of the slab so that pump light is introduced into the slab through the edges to provide gain for the quantum well layers.
摘要翻译： 一种边缘光泵浦半导体平板放大器，包括未掺杂的半导体板。 第一增益结构形成在板的上表面上，第二增益结构形成在板的下表面上。 增益结构可以是包括多个堆叠的量子阱层的谐振周期性增益结构。 限制层耦合到增益结构以将信号束限制在半导体板内。 散热器热耦合到限制层。 沿着侧边缘提供光泵浦源，或者耦合到板坯的端边缘，使得泵浦光通过边缘被引入到板坯中，以为量子阱层提供增益。
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公开(公告)号：US20110176204A1
公开(公告)日：2011-07-21
申请号：US12690539
申请日：2010-01-20
CPC分类号： H01S5/50 , B82Y20/00 , H01S5/02264 , H01S5/02272 , H01S5/024 , H01S5/041 , H01S5/2027 , H01S5/34306
摘要： An edge photo-pumped semiconductor slab amplifier including an undoped semiconductor slab. A first gain structure is formed on an upper surface of the slab and a second gain structure is formed on a lower surface of the slab. The gain structures can be resonant periodic gain structures including a plurality of stacked quantum well layers. Confining layers are coupled to the gain structures to confine a signal beam within the semiconductor slab. Heat sinks are thermally coupled to the confining layers. Optical pump sources are provided along the side edges or coupled to the end edges of the slab so that pump light is introduced into the slab through the edges to provide gain for the quantum well layers.
摘要翻译： 一种边缘光泵浦半导体平板放大器，包括未掺杂的半导体板。 第一增益结构形成在板的上表面上，第二增益结构形成在板的下表面上。 增益结构可以是包括多个堆叠的量子阱层的谐振周期性增益结构。 限制层耦合到增益结构以将信号束限制在半导体板内。 散热器热耦合到限制层。 沿着侧边缘提供光泵浦源，或者耦合到板坯的端边缘，使得泵浦光通过边缘被引入到板坯中，以为量子阱层提供增益。
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