公开(公告)号：US08384090B2

公开(公告)日：2013-02-26

申请号：US11940454

申请日：2007-11-15

申请人： Adrian Powell ,  Mark Brady ,  Stephan G. Mueller ,  Valeri F. Tsvetkov ,  Robert T. Leonard

发明人： Adrian Powell ,  Mark Brady ,  Stephan G. Mueller ,  Valeri F. Tsvetkov ,  Robert T. Leonard

IPC分类号： H01L29/24

CPC分类号： C30B23/00 ,  C30B29/36 ,  Y10T428/21

摘要： A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1c screw dislocation density of less than about 2000 cm−2.

摘要翻译： 公开了具有至少约3英寸的直径和小于约2000cm-2的1c螺旋位错密度的SiC的高质量单晶晶片。

公开(公告)号：US20080008641A1

公开(公告)日：2008-01-10

申请号：US11428954

申请日：2006-07-06

申请人： Robert T. Leonard ,  Mark Brady ,  Adrian Powell

发明人： Robert T. Leonard ,  Mark Brady ,  Adrian Powell

IPC分类号： C01B31/36

CPC分类号： C30B29/36 ,  C30B23/00

摘要： A semiconductor crystal and associated growth method are disclosed. The crystal includes a seed portion and a growth portion on the seed portion. The seed portion and the growth portion form a substantially right cylindrical single crystal of silicon carbide. A seed face defines an interface between the growth portion and the seed portion, with the seed face being substantially parallel to the bases of the right cylindrical crystal and being off-axis with respect to a basal plane of the single crystal. The growth portion replicates the polytype of the seed portion and the growth portion has a diameter of at least about 100 mm.

摘要翻译： 公开了半导体晶体和相关生长方法。 晶体包括种子部分和种子部分上的生长部分。 种子部分和生长部分形成基本上为圆柱形的碳化硅单晶。 种子面限定了生长部分和种子部分之间的界面，种子面基本上平行于右圆柱形晶体的基部并且相对于单晶的基面偏离轴。 生长部分复制种子部分的多型，并且生长部分具有至少约100mm的直径。

公开(公告)号：US07314520B2

公开(公告)日：2008-01-01

申请号：US10957806

申请日：2004-10-04

申请人： Adrian Powell ,  Mark Brady ,  Stephen G. Mueller ,  Valeri F. Tsvetkov ,  Robert T. Leonard

发明人： Adrian Powell ,  Mark Brady ,  Stephen G. Mueller ,  Valeri F. Tsvetkov ,  Robert T. Leonard

IPC分类号： C30B25/12

CPC分类号： C30B23/00 ,  C30B29/36 ,  Y10T428/21

摘要： A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1 c screw dislocation density of less than about 2000 cm−2.

摘要翻译： 公开了一种高质量的SiC晶圆，其直径至少​​为约3英寸，螺旋位错密度小于约2000cm -2。

公开(公告)号：US07563321B2

公开(公告)日：2009-07-21

申请号：US11006997

申请日：2004-12-08

申请人： Adrian Powell ,  Valeri F. Tsvetkov ,  Mark Brady ,  Robert T. Leonard

发明人： Adrian Powell ,  Valeri F. Tsvetkov ,  Mark Brady ,  Robert T. Leonard

IPC分类号： C30B23/00 ,  H01L29/04

CPC分类号： C30B29/36 ,  C30B23/00

摘要： The invention is an improvement in the method of producing a high quality bulk single crystal of silicon carbide in a seeded sublimation system. In a first embodiment, the improvement comprises reducing the number of macrosteps in a growing crystal by incorporating a high concentration of nitrogen atoms in the initial one (1) millimeter of crystal growth.

摘要翻译： 本发明是在种子升华系统中生产高质量的碳化硅单晶的方法的改进。 在第一实施例中，改进包括通过在最初的一（1）毫米晶体生长中引入高浓度的氮原子来减少生长晶体中的宏步数。

公开(公告)号：US20080169476A1

公开(公告)日：2008-07-17

申请号：US11940454

申请日：2007-11-15

申请人： Adrian Powell ,  Mark Brady ,  Stephan G. Mueller ,  Valeri F. Tsvetkov ,  Robert T. Leonard

发明人： Adrian Powell ,  Mark Brady ,  Stephan G. Mueller ,  Valeri F. Tsvetkov ,  Robert T. Leonard

IPC分类号： H01L29/24 ,  B32B33/00

CPC分类号： C30B23/00 ,  C30B29/36 ,  Y10T428/21

摘要： A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1c screw dislocation density of less than about 2000 cm 2.

摘要翻译： 公开了具有至少约3英寸的直径和小于约2000cm 2的1c螺旋位错密度的SiC的高质量单晶晶片。

公开(公告)号：US08980445B2

公开(公告)日：2015-03-17

申请号：US11428954

申请日：2006-07-06

申请人： Robert T. Leonard ,  Mark Brady ,  Adrian Powell

发明人： Robert T. Leonard ,  Mark Brady ,  Adrian Powell

IPC分类号： C01B31/36 ,  B32B9/00 ,  B32B19/00 ,  C30B29/36 ,  C30B23/00

CPC分类号： C30B29/36 ,  C30B23/00

摘要： A semiconductor crystal and associated growth method are disclosed. The crystal includes a seed portion and a growth portion on the seed portion. The seed portion and the growth portion form a substantially right cylindrical single crystal of silicon carbide. A seed face defines an interface between the growth portion and the seed portion, with the seed face being substantially parallel to the bases of the right cylindrical crystal and being off-axis with respect to a basal plane of the single crystal. The growth portion replicates the polytype of the seed portion and the growth portion has a diameter of at least about 100 mm.

摘要翻译： 公开了半导体晶体和相关生长方法。 晶体包括种子部分和种子部分上的生长部分。 种子部分和生长部分形成基本上为圆柱形的碳化硅单晶。 种子面限定了生长部分和种子部分之间的界面，种子面基本上平行于右圆柱形晶体的基部并且相对于单晶的基面偏离轴。 生长部分复制种子部分的多型，并且生长部分具有至少约100mm的直径。

公开(公告)号：US08410488B2

公开(公告)日：2013-04-02

申请号：US11854878

申请日：2007-09-13

申请人： Cem Basceri ,  Yuri Khlebnikov ,  Igor Khlebnikov ,  Cengiz Balkas ,  Murat N. Silan ,  Hudson McD. Hobgood ,  Calvin H. Carter, Jr. ,  Vijay Balakrishna ,  Robert T. Leonard ,  Adrian R. Powell ,  Valeri T. Tsvetkov ,  Jason R. Jenny

发明人： Cem Basceri ,  Yuri Khlebnikov ,  Igor Khlebnikov ,  Cengiz Balkas ,  Murat N. Silan ,  Hudson McD. Hobgood ,  Calvin H. Carter, Jr. ,  Vijay Balakrishna ,  Robert T. Leonard ,  Adrian R. Powell ,  Valeri T. Tsvetkov ,  Jason R. Jenny

IPC分类号： C01B31/36 ,  H01L31/0312

CPC分类号： H01L29/1608 ,  C30B23/002 ,  C30B23/005 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02634 ,  Y10T428/21

摘要： Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material.

公开(公告)号：US09099377B2

公开(公告)日：2015-08-04

申请号：US11854864

申请日：2007-09-13

申请人： Cem Basceri ,  Yuri Khlebnikov ,  Igor Khlebnikov ,  Cengiz Balkas ,  Murat N. Silan ,  Hudson McD. Hobgood ,  Calvin H. Carter, Jr. ,  Vijay Balakrishna ,  Robert T. Leonard ,  Adrian R. Powell ,  Valeri T. Tsvetkov ,  Jason R. Jenny

发明人： Cem Basceri ,  Yuri Khlebnikov ,  Igor Khlebnikov ,  Cengiz Balkas ,  Murat N. Silan ,  Hudson McD. Hobgood ,  Calvin H. Carter, Jr. ,  Vijay Balakrishna ,  Robert T. Leonard ,  Adrian R. Powell ,  Valeri T. Tsvetkov ,  Jason R. Jenny

IPC分类号： C30B23/00 ,  C30B29/36 ,  C30B29/40 ,  H01L29/16 ,  H01L21/02

CPC分类号： H01L29/1608 ,  C30B23/002 ,  C30B23/005 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02634 ,  Y10T428/21

摘要： Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material.

摘要翻译： 公开了无微波，单晶，碳化硅（SiC）和相关制造方法。 通过将源材料和种子材料放置在升华系统的反应坩埚中的种子保持器上来生长SiC，其中包括源材料，反应坩埚和种子保持器的升华系统的构成成分基本上没有无意的杂质。 通过控制PVT过程中生长温度，生长压力，SiC升华通量和组成以及种子材料或种子材料上生长的SiC晶体之间的温度梯度，消除了微管诱导过程的不稳定性， 在种子材料上生长游离的SiC晶体。