公开(公告)号：US08410488B2

公开(公告)日：2013-04-02

申请号：US11854878

申请日：2007-09-13

申请人： Cem Basceri ,  Yuri Khlebnikov ,  Igor Khlebnikov ,  Cengiz Balkas ,  Murat N. Silan ,  Hudson McD. Hobgood ,  Calvin H. Carter, Jr. ,  Vijay Balakrishna ,  Robert T. Leonard ,  Adrian R. Powell ,  Valeri T. Tsvetkov ,  Jason R. Jenny

发明人： Cem Basceri ,  Yuri Khlebnikov ,  Igor Khlebnikov ,  Cengiz Balkas ,  Murat N. Silan ,  Hudson McD. Hobgood ,  Calvin H. Carter, Jr. ,  Vijay Balakrishna ,  Robert T. Leonard ,  Adrian R. Powell ,  Valeri T. Tsvetkov ,  Jason R. Jenny

IPC分类号： C01B31/36 ,  H01L31/0312

CPC分类号： H01L29/1608 ,  C30B23/002 ,  C30B23/005 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02634 ,  Y10T428/21

摘要： Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material.

公开(公告)号：US09099377B2

公开(公告)日：2015-08-04

申请号：US11854864

申请日：2007-09-13

申请人： Cem Basceri ,  Yuri Khlebnikov ,  Igor Khlebnikov ,  Cengiz Balkas ,  Murat N. Silan ,  Hudson McD. Hobgood ,  Calvin H. Carter, Jr. ,  Vijay Balakrishna ,  Robert T. Leonard ,  Adrian R. Powell ,  Valeri T. Tsvetkov ,  Jason R. Jenny

发明人： Cem Basceri ,  Yuri Khlebnikov ,  Igor Khlebnikov ,  Cengiz Balkas ,  Murat N. Silan ,  Hudson McD. Hobgood ,  Calvin H. Carter, Jr. ,  Vijay Balakrishna ,  Robert T. Leonard ,  Adrian R. Powell ,  Valeri T. Tsvetkov ,  Jason R. Jenny

IPC分类号： C30B23/00 ,  C30B29/36 ,  C30B29/40 ,  H01L29/16 ,  H01L21/02

CPC分类号： H01L29/1608 ,  C30B23/002 ,  C30B23/005 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02634 ,  Y10T428/21

摘要： Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material.

摘要翻译： 公开了无微波，单晶，碳化硅（SiC）和相关制造方法。 通过将源材料和种子材料放置在升华系统的反应坩埚中的种子保持器上来生长SiC，其中包括源材料，反应坩埚和种子保持器的升华系统的构成成分基本上没有无意的杂质。 通过控制PVT过程中生长温度，生长压力，SiC升华通量和组成以及种子材料或种子材料上生长的SiC晶体之间的温度梯度，消除了微管诱导过程的不稳定性， 在种子材料上生长游离的SiC晶体。

公开(公告)号：US20080083366A1

公开(公告)日：2008-04-10

申请号：US11854864

申请日：2007-09-13

申请人： Cem Basceri ,  Yuri Khlebnikov ,  Igor Khlebnikov ,  Cengiz Balkas ,  Murat Silan ,  Hudson Hobgood ,  Calvin Carter ,  Vijay Balakrishna ,  Robert Leonard ,  Adrian Powell ,  Valeri Tsvetkov ,  Jason Jenny

发明人： Cem Basceri ,  Yuri Khlebnikov ,  Igor Khlebnikov ,  Cengiz Balkas ,  Murat Silan ,  Hudson Hobgood ,  Calvin Carter ,  Vijay Balakrishna ,  Robert Leonard ,  Adrian Powell ,  Valeri Tsvetkov ,  Jason Jenny

IPC分类号： C30B23/00 ,  C30B25/00

CPC分类号： H01L29/1608 ,  C30B23/002 ,  C30B23/005 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02634 ,  Y10T428/21

摘要： Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material.

摘要翻译： 公开了无微波，单晶，碳化硅（SiC）和相关制造方法。 通过将源材料和种子材料放置在升华系统的反应坩埚中的种子保持器上来生长SiC，其中包括源材料，反应坩埚和种子保持器的升华系统的构成成分基本上没有无意的杂质。 通过控制PVT过程中生长温度，生长压力，SiC升华通量和组成以及种子材料或种子材料上生长的SiC晶体之间的温度梯度，消除了微管诱导过程的不稳定性， 在种子材料上生长游离的SiC晶体。

公开(公告)号：US20080067524A1

公开(公告)日：2008-03-20

申请号：US11854878

申请日：2007-09-13

申请人： Cem Basceri ,  Yuri Khlebnikov ,  Igor Khlebnikov ,  Cengiz Balkas ,  Murat Silan ,  Hudson Hobgood ,  Calvin Carter ,  Vijay Balakrishna ,  Robert Leonard ,  Adrian Powell ,  Valeri Tsvetkov ,  Jason Jenny

发明人： Cem Basceri ,  Yuri Khlebnikov ,  Igor Khlebnikov ,  Cengiz Balkas ,  Murat Silan ,  Hudson Hobgood ,  Calvin Carter ,  Vijay Balakrishna ,  Robert Leonard ,  Adrian Powell ,  Valeri Tsvetkov ,  Jason Jenny

IPC分类号： B32B3/00 ,  C01B31/00 ,  H01L29/94

CPC分类号： H01L29/1608 ,  C30B23/002 ,  C30B23/005 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02634 ,  Y10T428/21

摘要： Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material.

公开(公告)号：US08664664B2

公开(公告)日：2014-03-04

申请号：US11651528

申请日：2007-01-10

申请人： Christopher Harris ,  Cem Basceri ,  Thomas Gehrke ,  Cengiz Balkas

发明人： Christopher Harris ,  Cem Basceri ,  Thomas Gehrke ,  Cengiz Balkas

IPC分类号： H01L29/15 ,  H01L31/0312

CPC分类号： H01L33/38 ,  H01L21/0475 ,  H01L23/367 ,  H01L23/3738 ,  H01L29/0657 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/417 ,  H01L33/0079 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/10158 ,  H01L2933/0016 ,  H01L2924/00

摘要： A dimpled substrate and method of making including a substrate of high thermal conductivity having a first main surface and a second main surface opposite the first main surface. Active epitaxial layers are formed on the first main surface of the substrate. Dimples are formed as extending from the second main surface into the substrate toward the first main surface. An electrical contact of low resistance material is disposed on the second main surface and within the dimples. A back contact of low resistance and low loss is thus provided while maintaining the substrate as an effective heat sink.

摘要翻译： 一种凹凸基板及其制造方法，包括具有第一主表面和与第一主表面相对的第二主表面的具有高导热性的基板。 在衬底的第一主表面上形成有源外延层。 凹坑形成为从第二主表面延伸到基板朝向第一主表面。 低电阻材料的电触点设置在第二主表面和凹坑内。 因此，在保持基板作为有效散热器的同时提供低电阻和低损耗的背接触。

公开(公告)号：US20070200116A1

公开(公告)日：2007-08-30

申请号：US11651528

申请日：2007-01-10

申请人： Christopher Harris ,  Cem Basceri ,  Thomas Gehrke ,  Cengiz Balkas

发明人： Christopher Harris ,  Cem Basceri ,  Thomas Gehrke ,  Cengiz Balkas

IPC分类号： H01L31/0312

CPC分类号： H01L33/38 ,  H01L21/0475 ,  H01L23/367 ,  H01L23/3738 ,  H01L29/0657 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/417 ,  H01L33/0079 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/10158 ,  H01L2933/0016 ,  H01L2924/00

摘要： A dimpled substrate and method of making including a substrate of high thermal conductivity having a first main surface and a second main surface opposite the first main surface. Active epitaxial layers are formed on the first main surface of the substrate. Dimples are formed as extending from the second main surface into the substrate toward the first main surface. An electrical contact of low resistance material is disposed on the second main surface and within the dimples. A back contact of low resistance and low loss is thus provided while maintaining the substrate as an effective heat sink.

摘要翻译： 一种凹凸基板及其制造方法，包括具有第一主表面和与第一主表面相对的第二主表面的具有高导热性的基板。 在衬底的第一主表面上形成有源外延层。 凹坑形成为从第二主表面延伸到基板朝向第一主表面。 低电阻材料的电触点设置在第二主表面和凹坑内。 因此，在保持基板作为有效散热器的同时提供低电阻和低损耗的背接触。

公开(公告)号：US20060174825A1

公开(公告)日：2006-08-10

申请号：US11052899

申请日：2005-02-09

申请人： Cem Basceri ,  Nikolay Yushin ,  Cengiz Balkas

发明人： Cem Basceri ,  Nikolay Yushin ,  Cengiz Balkas

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B29/36 ,  C30B23/00

摘要： Embodiments related to a method of forming semi-insulating silicon carbide (SiC) single crystal are disclosed in which shallow donor levels originating, at least in part, from residual nitrogen impurities are compensated by the addition of one or more trivalent element(s) introduced by doping the SiC in a concentration that changes the SiC conductivity from n-type to semi-insulating. Related embodiments provide for the additional doping of the SiC single crystal with one or more deep level dopants. However, the resulting concentration of deep level dopants, as well as shallow donor or acceptor dopants, is not limited to concentrations below the detection limits of secondary ion mass spectrometry (SIMS) analysis.

摘要翻译： 公开了与形成半​​绝缘碳化硅（SiC）单晶的方法相关的实施例，其中至少部分由残留氮杂质起源的浅供体水平通过加入一种或多种引入的三价元素来补偿 通过以将SiC导电性从n型改变为半绝缘的浓度掺杂SiC。 相关实施例提供了具有一个或多个深层掺杂剂的SiC单晶的附加掺杂。 然而，所产生的深层掺杂剂以及浅施主或受体掺杂剂的浓度不限于低于二次离子质谱（SIMS）分析检测限的浓度。