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1.发明授权公开(公告)号：US07262850B2
公开(公告)日：2007-08-28
申请号：US10735414
申请日：2003-12-12
IPC分类号： G01B11/00
CPC分类号： G01N21/95623 , G01N2021/95676 , G03F1/84 , G06T7/001 , G06T2207/10056 , G06T2207/30148
摘要： The invention relates to a method for inspection of periodic structures on lithography masks using a microscope with adjustable illumination and an operating element for movement of a mechanical stage with the lithography mask attached to it in order to record images of the lithography mask at a computer-controlled location on the lithography mask. The position, the size and the pitch specification of the lithography mask are stored.
摘要翻译： 本发明涉及一种使用具有可调节照明的显微镜对光刻掩模上的周期性结构进行检查的方法，以及用于使光刻掩模附着于其上的机械台的运动的操作元件，以便在计算机可读介质上记录光刻掩模的图像， 控制位置在光刻掩模上。 存储光刻掩模的位置，尺寸和间距规格。
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公开(公告)号：US07424144B2
公开(公告)日：2008-09-09
申请号：US10894640
申请日：2004-07-20
申请人： Roderick Koehle , Martin Verbeek
发明人： Roderick Koehle , Martin Verbeek
CPC分类号： G03F1/84 , Y10S977/84
摘要： The invention, which relates to a method for checking periodic structures on lithography masks, in which an image of the structure of the lithography mask is generated by an imaging optic of a microscope, provides a method for inspecting structures on lithography masks which is used to represent deviations in the periodic structure of a lithography mask, a better demarcation of the periodic structure from a deviation being achieved. The parameters of wavelength λ, the numerical aperture NA and the coherence of the illumination σ of the imaging optic of the microscope are chosen such that the inequality P ≤ λ NA ( 1 + σ ) describing the resolution limit for a periodic structure having the period P is fulfilled, and in that the image of the structure that is generated in this way is evaluated for deviations in the periodic structure.
摘要翻译： 本发明涉及一种用于检查光刻掩模上的周期性结构的方法，其中通过显微镜的成像光学器件产生光刻掩模的结构的图像，提供了一种用于检查光刻掩模上的结构的方法，其用于 表示光刻掩模的周期性结构中的偏差，周期性结构与实现偏差的更好的分界。 选择波长λ的参数，数值孔径NA和显微镜成像光学器件的照明西格玛的相干性，使得不等式
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公开(公告)号：US20050048379A1
公开(公告)日：2005-03-03
申请号：US10894640
申请日：2004-07-20
申请人： Roderick Koehle , Martin Verbeek
发明人： Roderick Koehle , Martin Verbeek
CPC分类号： G03F1/84 , Y10S977/84
摘要： The invention, which relates to a method for checking periodic structures on lithography masks, in which an image of the structure of the lithography mask is generated by an imaging optic of a microscope, provides a method for inspecting structures on lithography masks which is used to represent deviations in the periodic structure of a lithography mask, a better demarcation of the periodic structure from a deviation being achieved. The parameters of wavelength λ, the numerical aperture NA and the coherence of the illumination σ of the imaging optic of the microscope are chosen such that the inequality P≦λ/NA(1+σ) describing the resolution limit for a periodic structure having the period P is fulfilled, and in that the image of the structure that is generated in this way is evaluated for deviations in the periodic structure.
摘要翻译： 本发明涉及一种用于检查光刻掩模上的周期性结构的方法，其中通过显微镜的成像光学器件产生光刻掩模的结构的图像，提供了一种用于检查光刻掩模上的结构的方法，其用于 表示光刻掩模的周期性结构中的偏差，周期性结构与实现偏差的更好的分界。 选择波长λ的参数，数值孔径NA和显微镜成像光学器件的照明西格玛的相干性，使得描述具有周期性结构的分辨率极限的不等式P <=λ/ NA（1 + sigma）具有 满足周期P，并且以这种方式生成的结构的图像被评估周期性结构中的偏差。
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公开(公告)号：US20070037071A1
公开(公告)日：2007-02-15
申请号：US11510701
申请日：2006-08-28
CPC分类号： G03F1/74
摘要： The present invention relates to a method for removing defect material in a transmissive region of a lithography mask having transmissive carrier material and absorber material. A first method step involves removing defective material and absorber material in a processing region. A second method step involves applying an absorbent material in an outer region, the outer region depending on the partial region of the processing region that was previously covered with absorber material.
摘要翻译： 本发明涉及一种用于去除具有透射载体材料和吸收材料的光刻掩模的透射区域中的缺陷材料的方法。 第一种方法步骤涉及在处理区域中去除有缺陷的材料和吸收材料。 第二种方法步骤包括在外部区域中涂覆吸收材料，外部区域取决于先前被吸收材料覆盖的处理区域的部分区域。
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5.发明授权Defect repair method, in particular for repairing quartz defects on alternating phase shift masks 有权缺陷修复方法，特别是修复交替相移掩模上的石英缺陷公开(公告)号：US07108798B2
公开(公告)日：2006-09-19
申请号：US10668375
申请日：2003-09-24
申请人： Ralf Ludwig , Martin Verbeek
发明人： Ralf Ludwig , Martin Verbeek
摘要： The invention relates to a defect repair method, in particular for repairing quartz defects on alternating phase shift masks, wherein, for repairing defects (5) existing on one and the same component (1), both, defect repair method steps substantially based on mechanical processes (S3), in particular nanomachining method steps, and defect repair method steps substantially based on etching processes (S2), in particular FIB (Focused Ion Beam) method steps, are used. Moreover, the invention relates to a component (1), in particular a photomask, repaired by making use of such a defect repair method.
摘要翻译： 本发明涉及一种缺陷修复方法，特别是用于修复交替相移掩模上的石英缺陷，其中，为了修复存在于同一部件（1）上的缺陷（5），两者都基本上基于机械 使用基本上基于蚀刻工艺（S 2），特别是FIB（聚焦离子束）方法步骤的方法（S 3），特别是纳米加工方法步骤和缺陷修复方法步骤。 此外，本发明涉及通过利用这种缺陷修复方法修复的组件（1），特别是光掩模。
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6.发明授权Exposure mask with repaired dummy structure and method of repairing an exposure mask 失效具有修复虚拟结构的曝光掩模和修复曝光掩模的方法公开(公告)号：US06756164B2
公开(公告)日：2004-06-29
申请号：US10186113
申请日：2002-06-28
申请人： Torsten Franke , Henning Haffner , Armin Semmler , Martin Verbeek
发明人： Torsten Franke , Henning Haffner , Armin Semmler , Martin Verbeek
IPC分类号： G03F900
摘要： An exposure mask has a phase mask and a phase-shifting dummy structure. The exposure mask can be repaired with regard to defects in the dummy structure. For that purpose, repair structures are applied on the exposure mask substrate material which have a lower phase shift compared to the dummy structures. The repair structure is preferably produced from carbon, the carbon being applied in a suitable layer thickness such that the repair structure no longer permits any transmission. In a preferred embodiment, the repair structure is arranged laterally offset with respect to the defect in the dummy structure.
摘要翻译： 曝光掩模具有相位掩模和相移虚拟结构。 关于虚拟结构中的缺陷，可以修复曝光掩模。 为了这个目的，将修复结构应用于与虚拟结构相比具有较低相移的曝光掩模基板材料上。 修复结构优选由碳制成，碳以适当的层厚施加，使得修复结构不再允许任何传输。 在优选实施例中，修复结构相对于虚拟结构中的缺陷横向偏移设置。
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