摘要:
The present invention provides new photoresist compositions that comprise a resin binder, a photoactive component, particularly an acid generator, and a dye material that contains one or more chromophores that can reduce undesired reflections of exposure radiation. Preferred dye compounds are polymeric materials that include one or more chromophores such as anthracene and other polycyclic moieties that effectively absorb deep UV exposure radiation.
摘要:
The invention provides new light absorbing crosslinking compositions suitable for use as an antireflective composition (ARC), particularly for deep UV applications. The ARCs of the invention in general comprise a crosslinker and novel ARC resin binders that effectively absorb reflected deep UV exposure radiation.
摘要:
The present invention provides new photoresist compositions that comprise a resin binder, a photoactive component, particularly an acid generator, and a dye material that contains one or more chromophores that can reduce undesired reflections of exposure radiation. Preferred dye compounds are polymeric materials that include one or more chromophores such as anthracene and other polycyclic moieties that effectively absorb deep UV exposure radiation.
摘要:
The invention provides new light absorbing crosslinking compositions suitable for use as an antireflective composition (ARC), particularly for deep UV applications. The ARCs of the invention in general comprise a crosslinker and novel ARC resin binders that effectively absorb reflected deep UV exposure radiation.
摘要:
The present invention provides new photoresist compositions that comprise a resin binder, a photoactive component, particularly an acid generator, and a dye material that contains one or more chromophores that can reduce undesired reflections of exposure radiation. Preferred dye compounds are polymeric materials that include one or more chromophores such as anthracene and other polycyclic moieties that effectively absorb deep UV exposure radiation.
摘要:
The invention provides positive-acting chemically-amplified photoresist compositions that can provide excellent lithographic performance as well as significantly enhanced storage stability. In one aspect, photoresist compositions are provided that comprise a solvent that is free of hydroxy groups (i.e. non-hydroxylic solvent), a resin binder and a photoactive compound that exhibits enhanced and long-term solubility in the solvent. In a further aspect, resists are provided that are formulated in a hydroxyl-containing solvent such as ethyl lactate and that contains a sulfonium salt photoactive compound that includes a sulfonate counter anion that can provide enhanced storage stability for the resist.
摘要:
New methods and compositions are provided that enable application and processing of photoresist as thick coating layers, e.g. at dried layer (post soft-bake) thicknesses of in excess of 2 microns. Resists can be imaged at short wavelengths in accordance with the invention, including 248 nm.
摘要:
The invention provides new photoresist compositions that contain a resin binder and a blend of photoacid generators. Photoacid generator blends of the invention produce photoacids that differ in acid strength and/or size.
摘要:
The invention provides new photoresist compositions that contain a resin binder and a blend of photoacid generators. Photoacid generator blends of the invention produce photoacids that differ in acid strength and/or size.
摘要:
The invention provides new photoresist compositions that contain a resin binder and a blend of photoacid generators. Photoacid generator blends of the invention produce photoacids that differ in acid strength and/or size. A specific composition comprises a terpolymer having units of hydroxystyrene, styrene and t-butyl acrylate with the photoacid generators di-(4-tbutylphenyl)iodonium camphorsulfonate and di-(4-t-butylphenyl)iodonium o-trifluoromethylbenzene sulfonate.