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21 条记录 (耗时 0.056 秒)

    Liquid crystal mixtures having widened smectic temperature range
    5.
    发明授权
    Liquid crystal mixtures having widened smectic temperature range 失效
    具有扩大近晶温度范围的液晶混合物

    公开(公告)号：US4857227A

    公开(公告)日：1989-08-15

    申请号：US69172

    申请日：1987-07-02

    申请人： Timothy G. Adams ,  Roger F. Sinta

    发明人： Timothy G. Adams ,  Roger F. Sinta

    IPC分类号： C09K19/20

    CPC分类号： C09K19/2021

    摘要： Mixtures of liquid crystal compounds from among different classes of liquid crystal ester compounds are disclosed. The mixtures exhibit freezing points substantially lower than the freezing point of either ester compound alone, so as to provide a substantially improved (widened) smectic C mesomorphic temperature range and protection against freezing or crystallization of liquid crystal material over a range of temperatures at which an electrooptic display device would typically be operated.

    摘要翻译： 公开了来自不同种类的液晶酯化合物的液晶化合物的混合物。 混合物显示出比单独的酯化合物的凝固点低的凝固点，从而提供基本上改进的（加宽的）近晶C介晶温度范围，并且防止液晶材料在温度范围内的冷冻或结晶， 电光显示装置通常将被操作。

    Antireflective coatings with increased etch rates
    7.
    发明授权
    Antireflective coatings with increased etch rates 有权
    具有增加蚀刻速率的抗反射涂层

    公开(公告)号：US07183037B2

    公开(公告)日：2007-02-27

    申请号：US09932792

    申请日：2001-08-17

    申请人： Zhibiao Mao ,  Suzanne Coley ,  Timothy G. Adams

    发明人： Zhibiao Mao ,  Suzanne Coley ,  Timothy G. Adams

    IPC分类号： G03C1/76

    CPC分类号： G03F7/091

    摘要： The present invention provides new light absorbing compositions suitable for use as an antireflective coating (“ARC”) with an overcoated resist layer. ARCs of the invention exhibit increased etch rates in standard plasma etchants. Preferred ARCs of invention have significantly increased oxygen content relative to prior compositions.

    摘要翻译： 本发明提供适合用作具有外涂抗蚀剂层的抗反射涂层（“ARC”）的新的光吸收组合物。 本发明的ARC在标准等离子体蚀刻剂中表现出增加的蚀刻速率。 本发明的优选ARCs相对于现有组合物具有显着增加的氧含量。

    Photoresist compositions and use of same
    10.
    发明授权
    Photoresist compositions and use of same 有权
    光刻胶组合物及其用途

    公开(公告)号：US06828083B2

    公开(公告)日：2004-12-07

    申请号：US09825070

    申请日：2001-04-03

    申请人： Timothy G. Adams

    发明人： Timothy G. Adams

    IPC分类号： G03C173

    CPC分类号： G03F7/039 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/40 ,  Y10S430/106 ,  Y10S430/111

    摘要： Compositions and methods of the invention provide for a controlled flow of resist into device contact (via) holes during a post-exposure, post-development hard-bake step. Resists of the invention are positive-acting and contain one or more components that are preferably substantially stable (i.e. no substantial crosslinking) during: 1) soft-bake, pre-exposure thermal treatment to remove solvent carrier of the applied resist, and 2) post-exposure, pre-development thermal treatment to promote or enhance the acid-promoted reaction in exposed regions (typically a de-blocking reaction). However, resists of the invention will crosslink during a post-development more stringent thermal treatment (thermal flow hard-bake step).

    摘要翻译： 本发明的组合物和方法提供了在后曝光，后显影硬烘烤步骤中将抗蚀剂控制流入装置接触（通孔）孔。 本发明的抗蚀剂是正作用的，并且含有一种或多种在以下各项期间优选基本上稳定（即没有实质性交联）的组分：1）软烘烤，预曝光热处理以除去所施加的抗蚀剂的溶剂载体，以及2） 暴露后，预开发热处理以促进或增强暴露区域中的酸促进反应（通常为解封闭反应）。 然而，本发明的抗蚀剂将在后期开发更严格的热处理（热流硬化烘烤步骤）中交联。