公开(公告)号：US06413882B1

公开(公告)日：2002-07-02

申请号：US09291511

申请日：1999-04-14

申请人： Roger Yu-Kwan Leung ,  Suzanne Case

发明人： Roger Yu-Kwan Leung ,  Suzanne Case

IPC分类号： H01L2131

CPC分类号： H01L21/02137 ,  C09D183/04 ,  H01L21/02203 ,  H01L21/02282 ,  H01L21/31695

摘要： The present invention relates to novel low dielectric constant nanoporous dielectric films having improved mechanical strength, and to improved processes for producing the same on substrates suitable for use in the production of integrated circuits. The nanoporous dielectric films are prepared by a process of preparing a mixture of a spin-on-glass material with a suitable thermally degradable polymer that is soluble in nonpolar solvents. Applying the resulting mixture onto a substrate suitable for use in the production of an integrated circuit, to produce a coated substrate. The coated substrate is then heated for a time and at one or more temperatures effective to remove the thermally degradable polymer, so as to produce the desired low dielectric nanoporous dielectric film.

摘要翻译： 本发明涉及具有改进的机械强度的新颖的低介电常数纳米孔隙介电膜，以及用于在适用于集成电路生产中的基板上制造该介电薄膜的方法。 纳米多孔介电膜通过制备旋涂玻璃材料与可溶于非极性溶剂的合适的可热降解聚合物的混合物的方法制备。 将所得混合物施加到适合用于制造集成电路的基板上，以制造涂覆的基板。 然后将涂覆的基材加热一段时间并在一个或多个温度下有效去除可热降解的聚合物，以便产生所需的低介电纳米多孔介电膜。

公开(公告)号：US06204202B1

公开(公告)日：2001-03-20

申请号：US09291510

申请日：1999-04-14

申请人： Roger Yu-Kwan Leung ,  Suzanne Case

发明人： Roger Yu-Kwan Leung ,  Suzanne Case

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  C09D183/04 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/31695

摘要： The present invention relates to novel low dielectric constant nanoporous dielectric films having improved mechanical strength, and to improved processes for producing the same on substrates suitable for use in the production of integrated circuits. The nanoporous dielectric films are prepared by a process of preparing a mixture of a spin-on-glass material with a suitable thermally degradable polymer that is soluble in polar solvents. The resulting mixture is then applied onto a substrate suitable for use in the production of an integrated circuit, to produce a coated substrate that is heated for a time and at one or more temperatures effective to degrade the polymer, so as to produce the desired low dielectric nanoporous dielectric film.

摘要翻译： 本发明涉及具有改进的机械强度的新颖的低介电常数纳米孔隙介电膜，以及用于在适用于集成电路生产中的基板上制造该介电薄膜的方法。 纳米多孔介电膜通过制备旋涂玻璃材料与可溶于极性溶剂的合适的可热降解聚合物的混合物的方法制备。 然后将所得混合物施加到适合用于生产集成电路的基板上，以产生被加热一段时间并且在一个或多个温度下有效降解聚合物的涂覆基底，从而产生所需的低 介电纳米多孔介电膜。