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    Gap-fill methods
    1.
    发明授权
    Gap-fill methods 有权
    间隙填充方法

    公开(公告)号：US09558987B2

    公开(公告)日：2017-01-31

    申请号：US14582149

    申请日：2014-12-23

    申请人： Rohm and Haas Electronic Materials LLC ,  Dow Global Technologies LLC ,  Rohm and Haas Electronic Materials Korea Ltd.

    发明人： Jae Hwan Sim ,  Jin Hong Park ,  Jae-Bong Lim ,  Jung Kyu Jo ,  Cheng-Bai Xu ,  Jong Keun Park ,  Mingqi Li ,  Phillip D. Hustad

    IPC分类号： H01L21/31 ,  H01L21/762 ,  H01L21/3105

    CPC分类号： H01L21/76224 ,  H01L21/31058

    摘要： Gap-fill methods comprise: (a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a plurality of gaps to be filled; (b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a non-crosslinked crosslinkable polymer, an acid catalyst, a crosslinker and a solvent, wherein the crosslinkable polymer comprises a first unit of the following general formula (I): wherein: R1 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; and Ar1 is an optionally substituted aryl group that is free of crosslinkable groups; and a second unit of the following general formula (II): wherein: R3 is chosen from hydrogen, fluorine, C1-C3 alkyl and C1-C3 fluoroalkyl; and R4 is chosen from optionally substituted C1 to C12 linear, branched or cyclic alkyl, and optionally substituted C6 to C15 aryl, optionally containing heteroatoms, wherein at least one hydrogen atom is substituted with a functional group independently chosen from hydroxyl, carboxyl, thiol, amine, epoxy, alkoxy, amide and vinyl groups; and (c) heating the gap-fill composition at a temperature to cause the polymer to crosslink. The methods find particular applicability in the manufacture of semiconductor devices for the filling of high aspect ratio gaps.

    摘要翻译： 间隙填充方法包括：（a）在衬底的表面上提供具有浮雕图像的半导体衬底，所述浮雕图像包括要填充的多个间隙; （b）在所述浮雕图像上施加间隙填充组合物，其中所述间隙填充组合物包含非交联的可交联聚合物，酸催化剂，交联剂和溶剂，其中所述可交联聚合物包含以下通用物质的第一单元 式（I）：其中：R 1选自氢，氟，C 1 -C 3烷基和C 1 -C 3氟代烷基; 并且Ar1是不含可交联基团的任选取代的芳基; 和下列通式（II）的第二单元：其中：R 3选自氢，氟，C 1 -C 3烷基和C 1 -C 3氟代烷基; 并且R 4选自任选取代的C 1至C 12直链，支链或环状烷基，以及任选含有杂原子的任选取代的C 6至C 15芳基，其中至少一个氢原子被独立地选自羟基，羧基，硫醇， 胺，环氧，烷氧基，酰胺和乙烯基; 和（c）在一定温度下加热间隙填充组合物以使聚合物交联。 该方法在用于填充高纵横比间隙的半导体器件的制造中具有特别的适用性。