公开(公告)号：US08106472B2

公开(公告)日：2012-01-31

申请号：US12702524

申请日：2010-02-09

申请人： Rolf Kaufmann ,  Michael Lehmann ,  Peter Seitz

发明人： Rolf Kaufmann ,  Michael Lehmann ,  Peter Seitz

IPC分类号： H01L27/14

CPC分类号： H01L27/14603

摘要： The pixel for use in an image sensor comprises a low-doped semiconductor substrate (A). On the substrate (A), an arrangement of a plurality of floating areas, e.g., floating gates (FG2-FG6), is provided. Neighboring floating gates are electrically isolated from each other yet capacitively coupled to each other. By applying a voltage (V2−V1) to two contact areas (FG1, FG7), a lateral steplike electric field is generated. Photogenerated charge carriers move along the electric-field lines to the point of highest potential energy, where a floating diffusion (D) accumulate the photocharges. The charges accumulated in the various pixels are sequentially read out with a suitable circuit known from image-sensor literature, such as a source follower or a charge amplifier with row and column select mechanisms. The pixel of offers at the same time a large sensing area, a high photocharge-detection sensitivity and a high response speed, without any static current consumption.

摘要翻译： 用于图像传感器的像素包括低掺杂半导体衬底（A）。 在基板（A）上，提供多个浮动区域的布置，例如浮动栅极（FG2-FG6）。 相邻的浮动栅极彼此电隔离，但是电容耦合到彼此。 通过向两个接触区域（FG1，FG7）施加电压（V2-V1），产生横向的阶梯状电场。 光生电荷载体沿着电场线移动到最高势能点，浮动扩散（D）累积光电荷。 利用从图像传感器文献已知的合适的电路，例如源跟随器或具有行和列选择机构的电荷放大器，顺序地读出累积在各个像素中的电荷。 提供的像素同时具有大的感测区域，高的光电荷检测灵敏度和高响应速度，没有任何静态电流消耗。

公开(公告)号：US20100193666A1

公开(公告)日：2010-08-05

申请号：US12702524

申请日：2010-02-09

申请人： Rolf Kaufmann ,  Michael Lehmann ,  Peter Seitz

发明人： Rolf Kaufmann ,  Michael Lehmann ,  Peter Seitz

IPC分类号： H01L27/148

CPC分类号： H01L27/14603

摘要： The pixel for use in an image sensor comprises a low-doped semiconductor substrate (A). On the substrate (A), an arrangement of a plurality of floating areas, e.g., floating gates (FG2-FG6), is provided. Neighboring floating gates are electrically isolated from each other yet capacitively coupled to each other. By applying a voltage (V2−V1) to two contact areas (FG1, FG7), a lateral steplike electric field is generated. Photogenerated charge carriers move along the electric-field lines to the point of highest potential energy, where a floating diffusion (D) accumulate the photocharges. The charges accumulated in the various pixels are sequentially read out with a suitable circuit known from image-sensor literature, such as a source follower or a charge amplifier with row and column select mechanisms. The pixel of offers at the same time a large sensing area, a high photocharge-detection sensitivity and a high response speed, without any static current consumption.

摘要翻译： 用于图像传感器的像素包括低掺杂半导体衬底（A）。 在基板（A）上，提供多个浮动区域的布置，例如浮动栅极（FG2-FG6）。 相邻的浮动栅极彼此电隔离，但是电容耦合到彼此。 通过向两个接触区域（FG1，FG7）施加电压（V2-V1），产生横向的阶梯状电场。 光生电荷载体沿着电场线移动到最高势能点，浮动扩散（D）累积光电荷。 利用从图像传感器文献已知的合适的电路，例如源跟随器或具有行和列选择机构的电荷放大器，顺序地读出累积在各个像素中的电荷。 提供的像素同时具有大的感测区域，高的光电荷检测灵敏度和高响应速度，没有任何静态电流消耗。

公开(公告)号：US07701028B2

公开(公告)日：2010-04-20

申请号：US10594642

申请日：2005-03-31

申请人： Rolf Kaufmann ,  Michael Lehmann ,  Peter Seitz

发明人： Rolf Kaufmann ,  Michael Lehmann ,  Peter Seitz

IPC分类号： H01L31/075

CPC分类号： H01L27/14603

摘要： The pixel for use in an image sensor comprises a low-doped semiconductor substrate (A). On the substrate (A), an arrangement of a plurality of floating areas e.g., floating gates (FG2-FG6), is provided. Neighboring floating gates are electrically isolated from each other yet capacitively coupled to each other. By applying a voltage (V2-V1) to two contact areas (FG1, FG7), a lateral steplike electric field is generated. Photogenerated charge carriers move along the electric-field lines to the point of highest potential energy, where a floating diffusion (D) accumulate the photocharges. The charges accumulated in the various pixels are sequentially read out with a suitable circuit known from image-sensor literature, such as a source follower or a charge amplifier with row and column select mechanisms. The pixel of offers at the same time a large sensing area, a high photocharge-detection sensitivity and a high response speed without any static current consumption.

摘要翻译： 用于图像传感器的像素包括低掺杂半导体衬底（A）。 在基板（A）上，设置多个浮动区域（例如浮动栅极（FG2-FG6））的布置。 相邻的浮动栅极彼此电隔离，但是电容耦合到彼此。 通过向两个接触区域（FG1，FG7）施加电压（V2-V1），产生横向的阶梯状电场。 光生电荷载体沿着电场线移动到最高势能点，浮动扩散（D）累积光电荷。 利用从图像传感器文献已知的合适的电路，例如源跟随器或具有行和列选择机构的电荷放大器，顺序地读出累积在各个像素中的电荷。 提供的像素同时具有大的感测区域，高的光电荷检测灵敏度和高响应速度，没有任何静态电流消耗。

公开(公告)号：US20070187724A1

公开(公告)日：2007-08-16

申请号：US10594642

申请日：2005-03-31

申请人： Rolf Kaufmann ,  Michael Lehmann ,  Peter Seitz

发明人： Rolf Kaufmann ,  Michael Lehmann ,  Peter Seitz

IPC分类号： H01L29/768

CPC分类号： H01L27/14603

摘要： The pixel for use in an image sensor comprises a low-doped semiconductor substrate (A). On the substrate (A), an arrangement of a plurality of floating areas e.g., floating gates (FG2-FG6), is provided. Neighboring floating gates are electrically isolated from each other yet capacitively coupled to each other. By applying a voltage (V2-V1) to two contact areas (FG1, FG7), a lateral steplike electric field is generated. Photogenerated charge carriers move along the electric-field lines to the point of highest potential energy, where a floating diffusion (D) accumulate the photocharges. The charges accumulated in the various pixels are sequentially read out with a suitable circuit known from image-sensor literature, such as a source follower or a charge amplifier with row and column select mechanisms. The pixel of offers at the same time a large sensing area, a high photocharge-detection sensitivity and a high response speed without any static current consumption.

摘要翻译： 用于图像传感器的像素包括低掺杂半导体衬底（A）。 在基板（A）上，提供多个浮动区域（例如浮动栅极（FG 2 -FG 6））的布置。 相邻的浮动栅极彼此电隔离，但是电容耦合到彼此。 通过向两个接触区域（FG 1，FG 7）施加电压（V 2 -V 1），产生横向步进电场。 光生电荷载体沿着电场线移动到最高势能点，浮动扩散（D）累积光电荷。 利用从图像传感器文献已知的合适的电路，例如源跟随器或具有行和列选择机构的电荷放大器，顺序地读出累积在各个像素中的电荷。 提供的像素同时具有大的感测区域，高的光电荷检测灵敏度和高响应速度，没有任何静态电流消耗。

公开(公告)号：US07547889B2

公开(公告)日：2009-06-16

申请号：US12075815

申请日：2008-03-14

申请人： Michael Lehmann ,  Rolf Kaufmann ,  Max Erick Busse-Grawitz

发明人： Michael Lehmann ,  Rolf Kaufmann ,  Max Erick Busse-Grawitz

IPC分类号： G01T1/24 ,  H03F1/34

CPC分类号： G01T1/17 ,  G01T1/2018

摘要： The present invention discloses a photon detection device that is adapted to detect at least one packet of photons. The photon detection device may include a photon-sensitive element having an output, an amplifier; and a non-linear feedback (NLF) element. The photon-sensitive element generates charges upon the engagement of at least one photon packet therewith. An increase from a first number of charges in the photon-sensitive element to a second number of charges, results in a corresponding increase of a first reset time required to reset the first number of charges to a respective second reset time required to reset the second number of charges in the photon-sensitive element, whereby the reset time is non-linear to with respect to an increase in the charges. Additional and alternative embodiments are described and claimed.

摘要翻译： 本发明公开了一种适于检测至少一个光子包的光子检测装置。 光子检测装置可以包括具有输出的光敏元件，放大器; 和非线性反馈（NLF）元素。 光敏元件在与至少一个光子分组的接合时产生电荷。 从光敏元件中的第一数量的电荷增加到第二数量的电荷导致将第一数量的电荷复位到复位第二个所需的相应的第二复位时间所需的第一复位时间的相应增加 光子敏感元件中的电荷数，由此复位时间相对于电荷的增加是非线性的。 描述和要求保护附加和替代实施例。

公开(公告)号：US20090014658A1

公开(公告)日：2009-01-15

申请号：US11658516

申请日：2005-07-25

申请人： Kaspar Cottier ,  Rolf Kaufmann ,  Rino E. Kunz ,  Thierry Oggier ,  Guy Voirin ,  Simon Neukom ,  Michael Lehmann

发明人： Kaspar Cottier ,  Rolf Kaufmann ,  Rino E. Kunz ,  Thierry Oggier ,  Guy Voirin ,  Simon Neukom ,  Michael Lehmann

IPC分类号： G01T1/24

CPC分类号： H01L31/0232 ,  H01L27/14601 ,  H01L27/14623 ,  H01L27/148 ,  H01L31/02005

摘要： A pixel is formed in a semiconductor substrate (S) with a plane surface for use in a photodetector. It comprises an active region for converting incident light (In) into charge carriers, photogates (PGL, PGM, PGR) for generating a lateral electric potential (Φ(x)) across the active region, and an integration gate (IG) for storing charge carriers generated in the active region and a dump site (Ddiff). The pixel further comprises separation-enhancing means (SL) for additionally enhancing charge separation in the active region and charge transport from the active region to the integration gate (IG). The separation-enhancing means (SL) are for instance a shield layer designed such that for a given lateral electric potential (Φ(x)), the incident light (In) does not impinge on the section from which the charge carriers would not be transported to the integration gate (IG).

摘要翻译： 在具有用于光电检测器的平面的半导体基板（S）中形成像素。 它包括用于将入射光（In）转换成电荷载体的有源区域，用于在有源区域产生横向电势（Phi（x））的摄摄门（PGL，PGM，PGR）和用于存储的积分栅极 在活动区域​​中生成的电荷载体和转储位点（Ddiff）。 像素还包括分离增强装置（SL），用于另外增强有源区域中的电荷分离和从有源区域到积分栅极（IG）的电荷传输。 分离增强装置（SL）例如是设计成对于给定的横向电势（Phi（x））的屏蔽层，入射光（In）不会撞击载流子不会在其上的部分 运送到集成门（IG）。

公开(公告)号：US20110101241A1

公开(公告)日：2011-05-05

申请号：US12987669

申请日：2011-01-10

申请人： Kaspar Cottier ,  Rolf Kaufmann ,  Rino E. Kunz ,  Thierry Oggier ,  Guy Voirin ,  Simon Neukom ,  Michael Lehmann

发明人： Kaspar Cottier ,  Rolf Kaufmann ,  Rino E. Kunz ,  Thierry Oggier ,  Guy Voirin ,  Simon Neukom ,  Michael Lehmann

IPC分类号： G01N21/64

CPC分类号： H01L31/0232 ,  H01L27/14601 ,  H01L27/14623 ,  H01L27/148 ,  H01L31/02005

摘要： A pixel is formed in a semiconductor substrate (S) with a plane surface for use in a photodetector. It comprises an active region for converting incident light (In) into charge carriers, photogates (PGL, PGM, PGR) for generating a lateral electric potential (Φ(x)) across the active region, and an integration gate (IG) for storing charge carriers generated in the active region and a dump site (Ddiff). The pixel further comprises separation-enhancing means (SL) for additionally enhancing charge separation in the active region and charge transport from the active region to the integration gate (IG). The separation-enhancing means (SL) are for instance a shield layer designed such that for a given lateral electric potential (Φ(x)), the incident light (In) does not impinge on the section from which the charge carriers would not be transported to the integration gate (IG).

摘要翻译： 在具有用于光电检测器的平面的半导体基板（S）中形成像素。 它包括用于将入射光（In）转换成电荷载体的有源区域，用于在有源区域上产生横向电位（Φ（x））的摄像机（PGL，PGM，PGR）和用于存储的积分栅极 在活动区域​​中生成的电荷载体和转储位点（Ddiff）。 像素还包括分离增强装置（SL），用于另外增强有源区域中的电荷分离和从有源区域到积分栅极（IG）的电荷传输。 分离增强装置（SL）例如是设计成使得对于给定的横向电位（Φ（x）），入射光（In）不会撞击到电荷载体不会在其上的部分的屏蔽层 运送到集成门（IG）。

公开(公告)号：US07897928B2

公开(公告)日：2011-03-01

申请号：US11658516

申请日：2005-07-25

申请人： Rolf Kaufmann ,  Thierry Oggier ,  Simon Neukom ,  Michael Lehmann

发明人： Rolf Kaufmann ,  Thierry Oggier ,  Simon Neukom ,  Michael Lehmann

IPC分类号： G01T1/24 ,  H01L27/148

CPC分类号： H01L31/0232 ,  H01L27/14601 ,  H01L27/14623 ,  H01L27/148 ,  H01L31/02005

摘要： A pixel is formed in a semiconductor substrate (S) with a plane surface for use in a photodetector. It comprises an active region for converting incident light (In) into charge carriers, photogates (PGL, PGM, PGR) for generating a lateral electric potential (Φ(x)) across the active region, and an integration gate (IG) for storing charge carriers generated in the active region and a dump site (Ddiff). The pixel further comprises separation-enhancing means (SL) for additionally enhancing charge separation in the active region and charge transport from the active region to the integration gate (IG). The separation-enhancing means (SL) are for instance a shield layer designed such that for a given lateral electric potential (Φ(x)), the incident light (In) does not impinge on the section from which the charge carriers would not be transported to the integration gate (IG).

摘要翻译： 在具有用于光电检测器的平面的半导体基板（S）中形成像素。 它包括用于将入射光（In）转换成电荷载体的有源区域，用于在有源区域上产生横向电位（Φ（x））的照相门（PGL，PGM，PGR）和用于存储的积分栅极 在活动区域​​中生成的电荷载体和转储位点（Ddiff）。 像素还包括分离增强装置（SL），用于另外增强有源区域中的电荷分离和从有源区域到积分栅极（IG）的电荷传输。 分离增强装置（SL）例如是设计成使得对于给定的横向电位（Φ（x）），入射光（In）不会撞击到电荷载体不会在其上的部分的屏蔽层 运送到集成门（IG）。

公开(公告)号：US20080224054A1

公开(公告)日：2008-09-18

申请号：US12075815

申请日：2008-03-14

申请人： Michael Lehmann ,  Rolf Kaufmann ,  Max Erick Busse-Grawitz

发明人： Michael Lehmann ,  Rolf Kaufmann ,  Max Erick Busse-Grawitz

IPC分类号： G01T1/24

CPC分类号： G01T1/17 ,  G01T1/2018

摘要： The present invention discloses a photon detection device that is adapted to detect at least one packet of photons. The photon detection device may include a photon-sensitive element having an output, an amplifier; and a non-linear feedback (NLF) element. The photon-sensitive element generates charges upon the engagement of at least one photon packet therewith. An increase from a first number of charges in the photon-sensitive element to a second number of charges, results in a corresponding increase of a first reset time required to reset the first number of charges to a respective second reset time required to reset the second number of charges in the photon-sensitive element, whereby the reset time is non-linear to with respect to an increase in the charges. Additional and alternative embodiments are described and claimed.

摘要翻译： 本发明公开了一种适于检测至少一个光子包的光子检测装置。 光子检测装置可以包括具有输出的光敏元件，放大器; 和非线性反馈（NLF）元素。 光敏元件在与至少一个光子分组的接合时产生电荷。 从光敏元件中的第一数量的电荷增加到第二数量的电荷导致将第一数量的电荷复位到复位第二个所需的相应的第二复位时间所需的第一复位时间的相应增加 光子敏感元件中的电荷数，由此复位时间相对于电荷的增加是非线性的。 描述和要求保护附加和替代实施例。

公开(公告)号：US08760549B2

公开(公告)日：2014-06-24

申请号：US12549649

申请日：2009-08-28

申请人： Michael Lehmann ,  Bernhard Buttgen

发明人： Michael Lehmann ,  Bernhard Buttgen

IPC分类号： H04N3/14 ,  H04N5/335 ,  H01L27/148

CPC分类号： H04N5/335 ,  G01S7/4914 ,  H01L27/14603 ,  H01L27/14609 ,  H04N5/369

摘要： A demodulation pixel architecture allows for demodulating an incoming modulated electromagnetic wave, normally visible or infrared light. It is based on a charge coupled device (CCD) line connected to a drift field structure. The drift field is exposed to the incoming light. It collects the generated charge and forces it to move to the pick-up point. At this pick-up point, the CCD element samples the charge for a given time and then shifts the charge packets further on in the daisy chain. After a certain amount of shifts, the multiple charge packets are stored in so-called integration gates, in a preferred embodiment. The number of integration gates gives the number of simultaneously available taps. When the cycle is repeated several times, the charge is accumulated in the integration gates and thus the signal-to-noise ratio increases. The architecture is flexible in the number of taps. A dump node can be attached to the CCD line for dumping charge with the same speed as the samples are taken. Different implementations are described herein, which allow for smaller design or faster speed. The pixel structure can be exploited for e.g. 3D time-of-flight imaging. Both heterodyne and homodyne measurements are possible. Due to the highly-efficient charge transport enabled by static drift fields in the photo-sensitive region and small-sized gates in the CCD chain, high frequency bandwidth from just a few Hertz (Hz) up to greater GHz is supported. Thus, the pixel allows for highly-accurate optical distance measurements. Another possible application of this pixel architecture is fluorescence lifetime imaging microscopy (FLIM), where short laser pulses for triggering the fluorescence have to be suppressed.

摘要翻译： 解调像素架构允许解调通常可见或红外光的输入调制电磁波。 它是基于连接到漂移场结构的电荷耦合器件（CCD）线。 漂移场暴露于入射光。 它收集产生的电荷并迫使其移动到接收点。 在该拾取点，CCD元件对给定时间的电荷进行采样，然后在菊花链中进一步移动电荷分组。 在优选实施例中，在一定量的位移之后，多个电荷包被存储在所谓的积分门中。 集成门数提供同时可用的抽头数。 当周期重复多次时，电荷积聚在积分门中，因此信噪比增加。 该体系结构灵活的抽头数量。 转储节点可以连接到CCD线，以与采样相同的速度倾倒电荷。 这里描述了不同的实施方式，其允许更小的设计或更快的速度。 像素结构可以被利用来实现。 3D飞行时间成像。 外差和零差测量都是可能的。 由于光敏区域的静态漂移场和CCD链中的小尺寸栅极实现了高效率的电荷传输，因此支持从几赫兹（Hz）到更高GHz的高频带宽。 因此，像素允许高精度的光学距离测量。 该像素架构的另一可能应用是荧光寿命成像显微镜（FLIM），其中必须抑制用于触发荧光的短激光脉冲。