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    CLEANING OF A PROCESS CHAMBER
    1.
    发明申请
    CLEANING OF A PROCESS CHAMBER 审中-公开
    过程室的清洁

    公开(公告)号：US20120180810A1

    公开(公告)日：2012-07-19

    申请号：US13386711

    申请日：2010-05-28

    申请人： Rudolf Beckmann ,  Michael Geisler ,  Harald Rost

    发明人： Rudolf Beckmann ,  Michael Geisler ,  Harald Rost

    IPC分类号： B08B7/00 ,  B05C5/00

    CPC分类号： C23C16/4405 ,  B08B7/0071 ,  H01J37/32862

    摘要： A method for cleaning at least one component arranged in the inner region of a plasma process chamber using a cleaning gas including fluorine gas, where the process chamber has at least one electrode and counter-electrode for generating a plasma for plasma treatment, where the inner region is exposed to gaseous fluorine compounds with a partial pressure of greater than 5 mbar, where the process chamber has at least one electrode and counter-electrode for generating a plasma, and the fluorine gas is thermally activated by means of a temperature-regulating means, where the component to be cleaned has a temperature of

    摘要翻译： 一种使用包括氟气的清洁气体来清洁布置在等离子体处理室的内部区域中的至少一个部件的方法，其中处理室具有用于产生等离子体处理的等离子体的至少一个电极和对电极，其中内部 区域暴露于分压大于5毫巴的气态氟化合物，其中处理室具有至少一个用于产生等离子体的电极和对电极，并且氟气通过温度调节装置 ，其中待清洁的组分具有<350℃的温度。