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公开(公告)号：US08401500B1
公开(公告)日：2013-03-19
申请号：US12706544
申请日：2010-02-16
CPC分类号： G06F1/26 , H04K3/00 , H04K2203/30
摘要： The present disclosure relates to an RF power amplifier (PA) power supply that includes a series pass circuit coupled across a direct current (DC)-to-DC converter to receive a power supply input signal, such as provided from a battery, to provide a power supply output signal to at least a first RF PA based on an output setpoint. Control circuitry selects between a switching supply operating mode and a non-switching supply operating mode based on the output setpoint. During the switching supply operating mode, the DC-to-DC converter provides the power supply output signal and during the non-switching supply operating mode, the series pass circuit provides the power supply output signal.
摘要翻译： 本公开涉及一种RF功率放大器（PA）电源，其包括跨直流（DC）至DC转换器耦合的串联传递电路，以接收诸如由电池提供的电源输入信号，以提供 基于输出设定点至少至少第一RF PA的电源输出信号。 控制电路根据输出设定值在开关电源工作模式和非开关电源工作模式之间进行选择。 在开关电源工作模式期间，DC-DC转换器提供电源输出信号，在非开关电源工作模式期间，串联电路提供电源输出信号。
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公开(公告)号：US07372326B1
公开(公告)日：2008-05-13
申请号：US11549011
申请日：2006-10-12
申请人： Edward T. Spears , Douglas A. Teeter , Hien D. Bui
发明人： Edward T. Spears , Douglas A. Teeter , Hien D. Bui
IPC分类号： H03F1/14
CPC分类号： H03F1/0277
摘要： The present invention is a parallel RF amplifier circuit that selects between a high power side (HPS) and a low power side (LPS), depending upon output power. A chain matching network couples an LPS output to an HPS output for improved efficiency at lower output power. When the HPS is selected, the LPS output is disabled, and when the LPS is selected, the HPS output is disabled When the HPS is selected, large signal voltage swings from the collector of the HPS amplifier may be multiplied through the chain matching network, and may cause negative voltage swings at the LPS collector, which may degrade linearity and efficiency of the HPS amplifier by driving currents into the disabled LPS amplifier. Therefore, the present invention includes LPS bias circuitry to minimize impacts of negative voltage swings at the LPS output.
摘要翻译： 本发明是根据输出功率在大功率侧（HPS）和低功率侧（LPS）之间进行选择的并行RF放大电路。 链匹配网络将LPS输出耦合到HPS输出，以在更低的输出功率下提高效率。 当选择HPS时，LPS输出被禁止，当选择LPS时，HPS输出被禁用当选择HPS时，来自HPS放大器的集电极的大的信号电压摆幅可以通过链匹配网络相乘， 并且可能在LPS集电极处引起负电压摆幅，这可能通过驱动电流进入禁用的LPS放大器来降低HPS放大器的线性度和效率。 因此，本发明包括LPS偏压电路，以最小化LPS输出处的负电压摆幅的影响。
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公开(公告)号：US06356150B1
公开(公告)日：2002-03-12
申请号：US09488766
申请日：2000-01-21
IPC分类号： H03G320
CPC分类号： H03G1/0088
摘要： A high efficiency multiple power level power amplifier has a PIN diode network that selectively associates an impedance transformation network with an interstage impedance matching network to maintain desired gain and linearity characteristics for the power amplifier at different output power levels. The PIN diode network in the off mode (high power), has a high breakdown voltage and high series resistance thereby reducing distortion components. The PIN diode network in the on mode (low power), has a low series resistance thereby reducing insertion losses.
摘要翻译： 高效率多功率级功率放大器具有PIN二极管网络，其选择性地将阻抗变换网络与级间阻抗匹配网络相关联，以保持功率放大器在不同输出功率电平下的所需增益和线性特性。 PIN二极管网络处于关断模式（高功率），具有高击穿电压和高串联电阻，从而减少失真分量。 PIN二极管网络处于导通模式（低功耗），具有低串联电阻，从而减少插入损耗。
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公开(公告)号：US5939753A
公开(公告)日：1999-08-17
申请号：US832512
申请日：1997-04-02
申请人： Jun Ma , Han-Bin Kuo Liang , David Quoc-Hung Ngo , Shih King Cheng , Edward T. Spears , Bruce R. Yeung
发明人： Jun Ma , Han-Bin Kuo Liang , David Quoc-Hung Ngo , Shih King Cheng , Edward T. Spears , Bruce R. Yeung
CPC分类号： H01L27/0629 , H01L27/0266
摘要： A monolithic integrated circuit die (10) is fabricated to include unilateral FETs (113, 114, 115), RF passive devices such as a double polysilicon capacitor (57), a polysilicon resistor (58), and an inductor (155), and an ESD protection device (160). A first P.sup.+ sinker (28) provides signal isolation between two FETs (113, 115) separated by the first sinker (28) and is coupled to a source region (86) of a power FET (115) via a self-aligned titanium silicide structure (96). A second P.sup.+ sinker (29) is coupled to a bottom plate (44) of the double polysilicon capacitor (57). A third P+ sinker (178) is coupled to a source region (168) of the ESD protection device (160) via another titanium silicide structure (174).
摘要翻译： 单片集成电路管芯（10）被制造为包括单向FET（113,114,115），RF无源器件如双多晶硅电容器（57），多晶硅电阻器（58）和电感器（155），以及 ESD保护装置（160）。 第一P +沉降片（28）在由第一沉降片（28）分开的两个FET（113,115）之间提供信号隔离，并且经由自对准钛硅化物耦合到功率FET（115）的源极区域（86） 结构（96）。 第二P +沉降片（29）耦合到双多晶硅电容器（57）的底板（44）。 经由另一钛硅化物结构（174）将第三P +沉降片178连接到ESD保护装置160的源极区168。
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公开(公告)号：US08723260B1
公开(公告)日：2014-05-13
申请号：US12723257
申请日：2010-03-12
申请人： Michael Carroll , Daniel Charles Kerr , Christian Rye Iversen , Philip Mason , Julio Costa , Edward T. Spears
发明人： Michael Carroll , Daniel Charles Kerr , Christian Rye Iversen , Philip Mason , Julio Costa , Edward T. Spears
IPC分类号： H01L21/00
CPC分类号： H01L21/84 , H01L21/743 , H01L27/1203 , H01L29/4238 , H01L29/7833
摘要： The present disclosure relates to a radio frequency (RF) switch that includes multiple body-contacted field effect transistor (FET) elements coupled in series. The FET elements may be formed using a thin-film semiconductor device layer, which is part of a thin-film semiconductor die. Conduction paths between the FET elements through the thin-film semiconductor device layer and through a substrate of the thin-film semiconductor die may be substantially eliminated by using insulating materials. Elimination of the conduction paths allows an RF signal across the RF switch to be divided across the series coupled FET elements, such that each FET element is subjected to only a portion of the RF signal. Further, each FET element is body-contacted and may receive reverse body biasing when the RF switch is in an OFF state, thereby reducing an OFF state drain-to-source capacitance of each FET element.
摘要翻译： 本发明涉及射频（RF）开关，其包括串联耦合的多个体接触场效应晶体管（FET）元件。 可以使用作为薄膜半导体管芯的一部分的薄膜半导体器件层来形成FET元件。 通过薄膜半导体器件层和通过薄膜半导体晶片的衬底的FET元件之间的导通路径可以通过使用绝缘材料基本上消除。 消除导通路径允许跨越RF开关的RF信号在串联耦合的FET元件之间被分开，使得每个FET元件仅受到RF信号的一部分的影响。 此外，当RF开关处于OFF状态时，每个FET元件被体接触并且可以接收反向主体偏置，从而降低每个FET元件的截止状态漏极 - 源极电容。
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公开(公告)号：US08319558B1
公开(公告)日：2012-11-27
申请号：US12579099
申请日：2009-10-14
申请人： Edward T. Spears , Jason Stutzman
发明人： Edward T. Spears , Jason Stutzman
IPC分类号： H03F3/04
CPC分类号： H03F3/245 , H03F1/0272 , H03F3/19 , H03F2200/18
摘要： The present disclosure relates to RF power amplifier circuitry that may operate as either a Class AB amplifier or as a Class B amplifier based on a magnitude of RF output power provided by the RF power amplifier circuitry. A transistor bias circuit in the RF power amplifier circuitry may control transitioning between operating as the Class AB amplifier and operating as the Class B amplifier. When the magnitude of the RF output power is below a first threshold, the RF power amplifier circuitry may operate as a Class AB amplifier, and when the magnitude of the RF output power is above the first threshold, the RF power amplifier circuitry may operate as a Class B amplifier.
摘要翻译： 本公开涉及可以基于由RF功率放大器电路提供的RF输出功率的幅度作为AB类放大器或B类放大器工作的RF功率放大器电路。 RF功率放大器电路中的晶体管偏置电路可以控制在作为AB类放大器工作时作为B类放大器工作的转换。 当RF输出功率的大小低于第一阈值时，RF功率放大器电路可以作为AB类放大器工作，并且当RF输出功率的大小高于第一阈值时，RF功率放大器电路可以以 一个B类放大器。
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7.发明授权公开(公告)号：US08072271B1
公开(公告)日：2011-12-06
申请号：US12579117
申请日：2009-10-14
申请人： Edward T. Spears , Jason Stutzman
发明人： Edward T. Spears , Jason Stutzman
IPC分类号： H03F3/191
CPC分类号： H03F3/19 , H03F1/0261 , H03F1/32 , H03F2200/108 , H03F2200/18
摘要： The present disclosure relates to RF power amplifier circuitry that may include a source termination circuit, a load termination circuit, or both used in an unconventional manner to shape amplitude-based amplitude modulation (AM-AM) distortion, amplitude-based phase modulation (AM-PM) distortion, or both to extend a linear operating range of the RF power amplifier circuitry. Conventional RF power amplifier circuitry may operate as a Class F RF power amplifier, which may use termination circuits to create impedance valleys at even harmonics of an RF carrier frequency to improve a saturated efficiency of the RF power amplifier circuitry. However, the termination circuits of the present disclosure may create impedance valleys that are not at even harmonics of an RF carrier frequency to shape amplitude-based distortion, thereby extending a linear operating range of the RF power amplifier circuitry.
摘要翻译： 本公开涉及RF功率放大器电路，其可以包括以非常规方式使用的源终止电路，负载终端电路或二者，以形成基于幅度的幅度调制（AM-AM）失真，基于幅度的相位调制（AM -PM）失真或两者以扩展RF功率放大器电路的线性工作范围。 传统的RF功率放大器电路可以作为F类RF功率放大器工作，其可以使用终端电路来产生在RF载波频率的偶次谐波处的阻抗谷，以提高RF功率放大器电路的饱和效率。 然而，本公开的终端电路可以产生不在RF载波频率的偶次谐波上的阻抗谷，以形成基于幅度的失真，从而延长RF功率放大器电路的线性工作范围。
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公开(公告)号：US07315211B1
公开(公告)日：2008-01-01
申请号：US11391500
申请日：2006-03-28
申请人： Jongsoo Lee , Edward T. Spears
发明人： Jongsoo Lee , Edward T. Spears
IPC分类号： H03G3/10
CPC分类号： H03F1/0261 , H03F1/0227 , H03F2200/15 , H03F2200/411 , H03F2200/451
摘要： A two stage power amplifier circuit that employs both a DC to DC converter and sliding bias controller to improve power amplifier efficiency. The control signal that is generated by the power detector circuit to control the input voltage to the DC to DC converter is also used to provide the reference voltage that controls the sliding bias controller. The sliding bias controller reduces the quiescent current of the power amplifiers by reducing the bias currents, and thus the DC voltage at lower power output levels driving the power amplifiers. This causes the power amplifiers to operate at or near higher efficiency Class B operation at lower power output levels. As the power level increases, the sliding bias controller reduces its control on the bias currents so that the power amplifier can be driven at necessary higher power output levels.
摘要翻译： 两级功率放大器电路采用DC-DC转换器和滑动偏置控制器，以提高功率放大器的效率。 由功率检测器电路产生的用于控制DC-DC转换器的输入电压的控制信号也用于提供控制滑动偏置控制器的参考电压。 滑动偏置控制器通过减少偏置电流来降低功率放大器的静态电流，从而降低驱动功率放大器的较低功率输出电平下的直流电压。 这使得功率放大器在较低功率输出电平下工作在或接近更高效率的B类操作。 随着功率电平的增加，滑动偏置控制器减少对偏置电流的控制，从而使功率放大器能够以必要的较高功率输出电平驱动。
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