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1.发明申请Apparatus and method for fabricating one-dimensional nanostructures on flexible substrates 审中-公开在柔性基板上制造一维纳米结构的装置和方法公开(公告)号：US20100062178A1
公开(公告)日：2010-03-11
申请号：US11603558
申请日：2006-11-20
IPC分类号： B05D3/06
CPC分类号： C23C16/04 , C23C16/26 , C23C16/481
摘要： An apparatus and method are provided for forming one dimensional nanostructures. The method comprises ink jet printing (52) a plurality of catalyst particles (36) on a substrate (32). A gas (20) is applied (54) to the catalyst particles (36) while simultaneously applying (56) microwave radiation (38).
摘要翻译： 提供了一种用于形成一维纳米结构的装置和方法。 该方法包括在衬底（32）上喷墨印刷（52）多个催化剂颗粒（36）。 向催化剂颗粒（36）施加气体（20），同时施加（56）微波辐射（38）。
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公开(公告)号：US07294560B1
公开(公告)日：2007-11-13
申请号：US11605901
申请日：2006-11-28
IPC分类号： H01L21/326 , H01L21/479
CPC分类号： H01L21/76838 , B82Y30/00 , H01L23/5227 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , H01L2924/09701 , Y10S977/70 , Y10S977/742 , Y10S977/784 , H01L2924/00
摘要： A method provides a simple yet reliable technique to assemble one-dimensional nanostructures selectively in a desired pattern for device applications. The method comprises forming a plurality of spaced apart conductive elements (12, 20) in a sequential pattern (26) on a substrate (17) and immersing the plurality of spaced apart conductive elements (12, 20) in a solution (23) comprising a plurality of one-dimensional nanostructures (22). A voltage is applied to one of the plurality of spaced apart conductive elements (12, 20) formed in the sequential pattern (26), thereby causing portions of the plurality of one-dimensional nanostructures (22) to migrate between adjacent conductive elements (12, 20) in sequence beginning with the one of the plurality of spaced apart conductive elements (12, 20) to which the voltage is applied.
摘要翻译： 一种方法提供了一种简单但可靠的技术，用于以期望的图案选择性地组装一维纳米结构用于器件应用。 该方法包括在衬底（17）上以顺序图案（26）形成多个间隔开的导电元件（12,20），并将多个间隔开的导电元件（12,20）浸入溶液（23）中，包括 多个一维纳米结构（22）。 电压被施加到以顺序图案（26）形成的多个间隔开的多个间隔的导电元件（12,20）之一，从而使多个一维纳米结构（22）的部分在相邻的导电元件（12）之间迁移 ，20）开始于施加电压的多个间隔开的导电元件（12,20）中的一个。
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3.发明授权Method of selectively aligning and positioning nanometer-scale components using AC fields 失效使用AC场选择性对准和定位纳米级组件的方法公开(公告)号：US06879143B2
公开(公告)日：2005-04-12
申请号：US10123740
申请日：2002-04-16
CPC分类号： B82Y30/00 , B03C5/026 , C30B29/605 , C30B33/00
摘要： An improved and novel method of selectively aligning and positioning nanometer-scale components using AC fields. The method provides for more precise manipulation of the nanometer-scale components in bridging test electrodes including the steps of: providing an alternating current (AC) field at a single electrode or between a plurality of electrodes to create an electric field in an environment containing nanometer-scale components. The electric field thereby providing for the aligning and positioning of the nanometer-scale components to the desired location.
摘要翻译： 使用AC场选择性地对准和定位纳米级组件的改进和新颖的方法。 该方法提供了对桥接测试电极中的纳米尺度部件的更精确的操纵，包括以下步骤：在单个电极或多个电极之间提供交流（AC）场，以在包含纳米的环境中产生电场 规模的组件。 因此，电场提供将纳米级部件对准和定位到期望的位置。
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公开(公告)号：US5970381A
公开(公告)日：1999-10-19
申请号：US924697
申请日：1997-09-05
CPC分类号： B82Y30/00 , B05D1/185 , B82Y40/00 , Y10S438/939
摘要： A method is provided that produces a good, strong organic monomolecular film having its atoms arranged in a three-dimensionally ordered manner by cleaving a III-V group compound semiconductor substrate in film formation molecules or in a solution containing them, in order to cause selective chemisorption which forms a monomolecular film and then deposits another layer of organic molecule film. In this method, the III-V group compound semiconductor substrate is cleaved in a solution containing SH groups dissolved into a solvent in order to form a self-assembled monolayer and is then placed in another solution, where metallic ions are adsorbed to the surface of the film or where the functional groups are converted by chemical treatment. The substrate is then immersed in a solution containing organic molecules that are selectively chemisorbed to the functional groups. This process is sequentially repeated to form good, strong multilayers having a three-dimensionally ordered arrangement while also controlling film thickness.
摘要翻译： 提供一种方法，其通过在成膜分子中或在含有它们的溶液中裂解III-V族化合物半导体衬底，产生其原子以三维有序的方式排列的良好的强有机单分子膜，以引起选择性 化学吸附形成单分子膜，然后沉积另一层有机分子膜。 在该方法中，将III-V族化合物半导体衬底在含有溶解在溶剂中的SH基团的溶液中裂解，形成自组装单层，然后置于另一种溶液中，其中金属离子被吸附在 该膜或通过化学处理转化官能团的位置。 然后将衬底浸入含有选择性化学吸附到官能团的有机分子的溶液中。 顺序地重复该过程以形成具有三维有序排列的良好，强的多层，同时还控制膜厚度。
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