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公开(公告)号：US06764916B1
公开(公告)日：2004-07-20
申请号：US09408327
申请日：1999-09-29
IPC分类号： H01L218242
CPC分类号： H01L21/31637 , C23C16/405 , H01L27/10811 , H01L28/84
摘要： A manufacturing method for a semiconductor device, including forming on or above a semiconductor substrate a silicon film a surface of which has a first polycrystalline silicon film with mushroom or hemisphere-shaped crystal grains, and forming a Ta2O5 film on the silicon film at a pressure of 40 Pa or lower and at a temperature of 480° C. or lower, using a gas obtained by vaporizing Ta(OC2H5)5 as a tantalum source gas.
摘要翻译： 一种半导体器件的制造方法，其特征在于，在半导体基板的上方或上方形成有表面具有带有蘑菇状或半球状的晶粒的第一多晶硅膜的硅膜，在所述硅膜上形成Ta2O5膜的压力 使用通过蒸发Ta（OC2H5）5作为钽源气体获得的气体，在40Pa以下且在480℃以下的温度下进行。
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公开(公告)号：US07655993B2
公开(公告)日：2010-02-02
申请号：US11738741
申请日：2007-04-23
IPC分类号： H01L21/336
CPC分类号： H01L21/28194 , H01L21/28079 , H01L21/28202 , H01L21/823462 , H01L21/823842 , H01L21/823857 , H01L29/517 , H01L29/665 , H01L29/66545 , H01L29/7833
摘要： In a process of forming MISFETs that have gate insulating films that are mutually different in thickness on the same substrate, the formation of an undesirable natural oxide film at the interface between the semiconductor substrate and the gate insulating film is suppressed. A gate insulating film of MISFETs constituting an internal circuit is comprised of a silicon oxynitride film. Another gate insulating film of MISFETs constituting an I/O circuit is comprised of a laminated silicon oxynitride film and a high dielectric film. A process of forming the two types of gate insulating films on the substrate is continuously carried out in a treatment apparatus of a multi-chamber system. Accordingly, the substrate will not be exposed to air. Therefore, it is possible to suppress the inclusion of undesirable foreign matter and the formation of a natural oxide film at the interface between the substrate and the gate insulating films.
摘要翻译： 在形成具有相同基板上的厚度相互不同的栅极绝缘膜的MISFET的过程中，抑制了在半导体基板和栅极绝缘膜之间的界面处形成不期望的自然氧化膜。 构成内部电路的MISFET的栅极绝缘膜由氮氧化硅膜构成。 构成I / O电路的MISFET的另一个栅极绝缘膜由层叠的氮氧化硅膜和高介电膜构成。 在多室系统的处理装置中连续地进行在基板上形成两种栅极绝缘膜的工序。 因此，基板不会暴露在空气中。 因此，可以抑制在基板和栅极绝缘膜之间的界面处包含不需要的异物和形成自然氧化膜。
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3.发明申请公开(公告)号：US20060121740A1
公开(公告)日：2006-06-08
申请号：US10519799
申请日：2002-08-15
IPC分类号： H01L21/469 , H01L21/31
CPC分类号： H01L29/513 , H01L21/823857
摘要： After forming a silicon oxide film 9 on the surface of a region A of a semiconductor substrate 1, a high dielectric constant insulating film 10, a silicon film, a silicon oxide film 14 are successively deposited over the semiconductor substrate 1, and they are patterned to leave the silicon oxide film 14 in regions for forming gate electrodes. Then, after fabricating silicon films 13n and 13p by using the patterned silicon oxide film 14 as a mask, when removing the silicon oxide film 14, etching is performed under the condition where the etching selectivity of the silicon oxide film 14 to the high dielectric constant insulating film 10 becomes large, thereby leaving the high dielectric constant insulating film 10 also to portions below the end of the gate electrodes (13n, 13p). Thus, it is possible to ensure the voltage withstanding thereof and improve the characteristics of MISFET.
摘要翻译： 在半导体衬底1的区域A的表面上形成氧化硅膜9之后，在半导体衬底1上依次沉积高介电常数绝缘膜10，硅膜，氧化硅膜14，并将其图案化 以将氧化硅膜14留在用于形成栅电极的区域中。 然后，通过使用图案化氧化硅膜14作为掩模来制造硅膜13 n和13 p之后，当去除氧化硅膜14时，在氧化硅膜14的蚀刻选择性高的条件下进行蚀刻 介电常数绝缘膜10变大，从而将高介电常数绝缘膜10也留在栅电极（13n，13p）的端部下方的部分。 因此，可以确保其耐受电压并改善MISFET的特性。
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公开(公告)号：US07513706B2
公开(公告)日：2009-04-07
申请号：US11249102
申请日：2005-10-12
CPC分类号： B41J13/14 , B41J3/4071
摘要： A main body has a receiving section, which contains an ink ribbon cassette holding an ink ribbon, together with an optical disk. The ink ribbon and the optical disk are fed by a platen roller, and printing is performed on the optical disk through a thermal head. The optical disk is inserted from an insertion port at a side of the main body parallel to the feed direction of the ink ribbon. When the optical disk is inserted from an ejection port in a direction orthogonal to the fed direction of the ink ribbon, an insertion-prevention member prevents the insertion of the optical disk.
摘要翻译： 主体具有容纳部，该容纳部与光盘一起包含保持色带的色带盒。 墨带和光盘由压纸辊供给，通过热敏头对光盘进行打印。 光盘从与墨带的供给方向平行的主体侧的插入口插入。 当光盘从与墨带的进给方向垂直的方向从喷射口插入时，防止插入部件防止光盘的插入。
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公开(公告)号：US20070231045A1
公开(公告)日：2007-10-04
申请号：US11728291
申请日：2007-03-23
申请人： Ryoichi Furukawa , Katsuyuki Matsuo
发明人： Ryoichi Furukawa , Katsuyuki Matsuo
IPC分类号： B41J29/02
CPC分类号： B41J3/4071
摘要： A printing apparatus has an apparatus body including a platen roller, a thermal head, a storage in which a ribbon cartridge is stored exchangeably through an opening, and a cover of the apparatus body that covers the opening so as to be opened and closed. A gap is secured between an edge portion of the cover provided for the apparatus body in a state in which the cover is fitted onto the apparatus body to close the apparatus body and an edge portion of the opening of the storage. The gap is a slot for inserting an optical disk in its upright position to the apparatus body.
摘要翻译： 打印装置具有装置本体，该主体包括压纸滚筒，热敏头，通过开口将色带盒可交换存储的存储器和覆盖开口以便打开和关闭的装置主体的盖。 在将盖装配到装置本体上以关闭装置主体的状态和存储器的开口的边缘部分的状态下，在设置于装置主体的盖的边缘部分之间确保间隙。 间隙是用于将光盘插入其直立位置到设备主体的槽。
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公开(公告)号：US06909133B2
公开(公告)日：2005-06-21
申请号：US10699690
申请日：2003-11-04
IPC分类号： H01L27/092 , H01L21/8234 , H01L21/8238 , H01L27/088 , H01L29/78 , H01L29/108
CPC分类号： H01L21/28194 , H01L21/28079 , H01L21/28202 , H01L21/823462 , H01L21/823842 , H01L21/823857 , H01L29/517 , H01L29/665 , H01L29/66545 , H01L29/7833
摘要： In a process of forming MISFETs that have gate insulating films that are mutually different in thickness on the same substrate, the formation of an undesirable natural oxide film at the interface between the semiconductor substrate and the gate insulating film is suppressed. A gate insulating film of MISFETs constituting an internal circuit is comprised of a silicon oxynitride film. Another gate insulating film of MISFETs constituting an I/O circuit is comprised of a laminated silicon oxynitride film and a high dielectric film. A process of forming the two types of gate insulating films on the substrate is continuously carried out in a treatment apparatus of a multi-chamber system. Accordingly, the substrate will not be exposed to air. Therefore, it is possible to suppress the inclusion of undesirable foreign matter and the formation of a natural oxide film at the interface between the substrate and the gate insulating films.
摘要翻译： 在形成具有相同基板上的厚度相互不同的栅极绝缘膜的MISFET的过程中，抑制了在半导体基板和栅极绝缘膜之间的界面处形成不期望的自然氧化膜。 构成内部电路的MISFET的栅极绝缘膜由氮氧化硅膜构成。 构成I / O电路的MISFET的另一个栅极绝缘膜由层叠的氮氧化硅膜和高介电膜构成。 在多室系统的处理装置中连续地进行在基板上形成两种栅极绝缘膜的工序。 因此，基板不会暴露在空气中。 因此，可以抑制在基板和栅极绝缘膜之间的界面处包含不需要的异物和形成自然氧化膜。
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公开(公告)号：US20050077548A1
公开(公告)日：2005-04-14
申请号：US10968050
申请日：2004-10-20
IPC分类号： H01L27/092 , H01L21/8234 , H01L21/8238 , H01L27/088 , H01L29/78 , H01L23/62
CPC分类号： H01L21/28194 , H01L21/28079 , H01L21/28202 , H01L21/823462 , H01L21/823842 , H01L21/823857 , H01L29/517 , H01L29/665 , H01L29/66545 , H01L29/7833
摘要： In a process of forming MISFETs that have gate insulating films that are mutually different in thickness on the same substrate, the formation of an undesirable natural oxide film at the interface between the semiconductor substrate and the gate insulating film is suppressed. A gate insulating film of MISFETs constituting an internal circuit is comprised of a silicon oxynitride film. Another gate insulating film of MISFETs constituting an I/O circuit is comprised of a laminated silicon oxynitride film and a high dielectric film. A process of forming the two types of gate insulating films on the substrate is continuously carried out in a treatment apparatus of a multi-chamber system. Accordingly, the substrate will not be exposed to air. Therefore, it is possible to suppress the inclusion of undesirable foreign matter and the formation of a natural oxide film at the interface between the substrate and the gate insulating films.
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公开(公告)号：US07758265B2
公开(公告)日：2010-07-20
申请号：US11728291
申请日：2007-03-23
申请人： Ryoichi Furukawa , Katsuyuki Matsuo
发明人： Ryoichi Furukawa , Katsuyuki Matsuo
IPC分类号： B41J29/02
CPC分类号： B41J3/4071
摘要： A printing apparatus has an apparatus body including a platen roller, a thermal head, a storage in which a ribbon cartridge is stored exchangeably through an opening, and a cover of the apparatus body that covers the opening so as to be opened and closed. A gap is secured between an edge portion of the cover provided for the apparatus body in a state in which the cover is fitted onto the apparatus body to close the apparatus body and an edge portion of the opening of the storage. The gap is a slot for inserting an optical disk in its upright position to the apparatus body.
摘要翻译： 打印装置具有装置本体，该主体包括压纸滚筒，热敏头，通过开口将色带盒可交换存储的存储器和覆盖开口以便打开和关闭的装置主体的盖。 在将盖装配到装置本体上以关闭装置主体的状态和存储器的开口的边缘部分的状态下，在设置于装置主体的盖的边缘部分之间确保间隙。 间隙是用于将光盘插入其直立位置到设备主体的槽。
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公开(公告)号：US07217607B2
公开(公告)日：2007-05-15
申请号：US10968050
申请日：2004-10-20
IPC分类号： H01L21/336
CPC分类号： H01L21/28194 , H01L21/28079 , H01L21/28202 , H01L21/823462 , H01L21/823842 , H01L21/823857 , H01L29/517 , H01L29/665 , H01L29/66545 , H01L29/7833
摘要： In a process of forming MISFETs that have gate insulating films that are mutually different in thickness on the same substrate, the formation of an undesirable natural oxide film at the interface between the semiconductor substrate and the gate insulating film is suppressed. A gate insulating film of MISFETs constituting an internal circuit is comprised of a silicon oxynitride film. Another gate insulating film of MISFETs constituting an I/O circuit is comprised of a laminated silicon oxynitride film and a high dielectric film. A process of forming the two types of gate insulating films on the substrate is continuously carried out in a treatment apparatus of a multi-chamber system. Accordingly, the substrate will not be exposed to air. Therefore, it is possible to suppress the inclusion of undesirable foreign matter and the formation of a natural oxide film at the interface between the substrate and the gate insulating films.
摘要翻译： 在形成具有相同基板上的厚度相互不同的栅极绝缘膜的MISFET的过程中，抑制了在半导体基板和栅极绝缘膜之间的界面处形成不期望的自然氧化膜。 构成内部电路的MISFET的栅极绝缘膜由氮氧化硅膜构成。 构成I / O电路的MISFET的另一个栅极绝缘膜由层叠的氮氧化硅膜和高介电膜构成。 在多室系统的处理装置中连续地进行在基板上形成两种栅极绝缘膜的工序。 因此，基板不会暴露在空气中。 因此，可以抑制在基板和栅极绝缘膜之间的界面处包含不需要的异物和形成自然氧化膜。
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10.发明授权公开(公告)号：US07186604B2
公开(公告)日：2007-03-06
申请号：US10519799
申请日：2002-08-15
IPC分类号： H01L21/8238
CPC分类号： H01L29/513 , H01L21/823857
摘要： After forming a silicon oxide film 9 on the surface of a region A of a semiconductor substrate 1, a high dielectric constant insulating film 10, a silicon film, a silicon oxide film 14 are successively deposited over the semiconductor substrate 1, and they are patterned to leave the silicon oxide film 14 in regions for forming gate electrodes. Then, after fabricating silicon films 13n and 13p by using the patterned silicon oxide film 14 as a mask, when removing the silicon oxide film 14, etching is performed under the condition where the etching selectivity of the silicon oxide film 14 to the high dielectric constant insulating film 10 becomes large, thereby leaving the high dielectric constant insulating film 10 also to portions below the end of the gate electrodes (13n, 13p). Thus, it is possible to ensure the voltage withstanding thereof and improve the characteristics of MISFET.
摘要翻译： 在半导体衬底1的区域A的表面上形成氧化硅膜9之后，在半导体衬底1上依次沉积高介电常数绝缘膜10，硅膜，氧化硅膜14，并将其图案化 以将氧化硅膜14留在用于形成栅电极的区域中。 然后，通过使用图案化氧化硅膜14作为掩模来制造硅膜13 n和13 p之后，当去除氧化硅膜14时，在氧化硅膜14的蚀刻选择性高的条件下进行蚀刻 介电常数绝缘膜10变大，从而将高介电常数绝缘膜10也留在栅电极（13n，13p）的端部下方的部分。 因此，可以确保其耐受电压并改善MISFET的特性。
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