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公开(公告)号：US20120196228A1
公开(公告)日：2012-08-02
申请号：US13345355
申请日：2012-01-06
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： There is disclosed a resist composition comprising at least: (A) a polymer containing one or more repeating units having a structure shown by the following general formula (1) and/or (2), an alkaline-solubility of the polymer being increased by an acid, (B) a photo acid generator generating, with responding to a high energy beam, a sulfonic acid shown by the following general formula (3), and (C) an onium sulfonate shown by the following general formula (4). There can be a resist composition showing not only excellent LWR and pattern profile but also extremely good performance in pattern-fall resistance, and to provide a patterning process using the same.
摘要翻译： 公开了一种抗蚀剂组合物，其至少包含：（A）含有一个或多个具有下列通式（1）和/或（2）所示结构的重复单元的聚合物，该聚合物的碱溶性通过 一种酸，（B）一种光酸反应器，其响应于高能束，产生由以下通式（3）表示的磺酸，和（C）由以下通式（4）表示的磺酸盐。 可以存在不仅具有优异的LWR和图案轮廓的抗蚀剂组合物，而且还具有极好的抗倒伏性能，并且提供使用其的图案化工艺。
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公开(公告)号：US20120164577A1
公开(公告)日：2012-06-28
申请号：US13309083
申请日：2011-12-01
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , G03F7/11 , G03F7/2041
摘要： A positive resist composition includes at least: (A) a polymer containing a repeating unit (a1) and an acid labile repeating unit (a2), wherein the repeating unit (a1) generates an acid of a structure represented by general formula (1) as a result that the repeating unit (a1) is sensed to a high-energy radiation, the polymer being changed in solubility in alkali by the acid; and (B) an onium sulfonate represented by general formula (2). Also, a positive resist composition, which simultaneously establishes a lower acid diffusing characteristic and a higher dissolution contrast, and which suppresses volatilization of components originated from the resist composition such as a generated acid, a quencher, and the like, to suppress a chemical flare, thereby improving a DOF, a circularity, an LWR, and the like of a hole pattern, trench pattern, and the like; and a patterning process using the positive resist composition.
摘要翻译： 正型抗蚀剂组合物至少包括：（A）含有重复单元（a1）和酸不稳定重复单元（a2）的聚合物，其中重复单元（a1）产生由通式（1）表示的结构的酸， 结果，重复单元（a1）被感测为高能量辐射，聚合物通过酸改变在碱中的溶解度; 和（B）由通式（2）表示的鎓磺酸盐。 而且，正极抗蚀剂组合物同时形成较低的酸扩散特性和较高的溶解对比度，并且抑制源自抗蚀剂组合物的组分如产生的酸，猝灭剂等的挥发，以抑制化学发光 从而改善孔图案，沟槽图案等的DOF，圆形度，LWR等; 以及使用正性抗蚀剂组合物的图案化工艺。
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公开(公告)号：US20080008959A1
公开(公告)日：2008-01-10
申请号：US11773656
申请日：2007-07-05
CPC分类号： G03F7/0397 , Y10S430/108 , Y10S430/111
摘要： In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R1 is H, methyl or trifluoromethyl, R2 and R3 are alkyl, R4 is a monovalent hydrocarbon group, X1 is O, S or CH2CH2, X2 is O, S, CH2 or CH2CH2, n is 1 or 2, a and b each are from 0.01 to less than 1, c, d1 and d2 each are from 0 to less than 1, and a+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.
摘要翻译： 在包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）光酸产生剂的正型抗蚀剂组合物中，组分（A）是式（1）的聚合物，其中R 1是H，甲基或三氟甲基，R 2和R 3是烷基，R 4是一价烃基，X O，S或CH 2 CH 2，X 2是O，S，CH 2， 2或CH 2 CH 2，n为1或2，a和b各自为0.01至小于1，c，d1和d2各自为 从0到小于1，a + b + c + d1 + d2 = 1。 当通过ArF光刻处理时，抗蚀剂组合物以增强的分辨率形成具有高矩形性的图案。
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公开(公告)号：US20080008960A1
公开(公告)日：2008-01-10
申请号：US11773706
申请日：2007-07-05
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/0395 , G03F7/2041 , Y10S430/111 , Y10S430/12 , Y10S430/122 , Y10S430/126
摘要： In a positive resist composition comprising (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) a photoacid generator, component (A) is a polymer of formula (1) wherein R1 is H, methyl or trifluoromethyl, R2 and R3 are alkyl, R4 is a monovalent hydrocarbon group, X1 is O, S or CH2CH2, X2 is O, S, CH2 or CH2CH2, n is 1 or 2, a1, a2, c, d1 and d2 each are from 0 to less than 1, b is from 0.01 to less than 1, and a1+a2+b+c+d1+d2=1. The resist composition forms a pattern with high rectangularity at an enhanced resolution when processed by ArF lithography.
摘要翻译： 在包含（A）在酸的作用下变得可溶于碱性显影剂的树脂组分和（B）光酸产生剂的正型抗蚀剂组合物中，组分（A）是式（1）的聚合物，其中R 1是H，甲基或三氟甲基，R 2和R 3是烷基，R 4是一价烃基，X O，S或CH 2 CH 2，X 2是O，S，CH 2， 2或CH 2 CH 2，n为1或2，a1，a2，c，d1和d2各自为0至小于1，b 为0.01〜小于1，a1 + a2 + b + c + d1 + d2 = 1。 当通过ArF光刻处理时，抗蚀剂组合物以增强的分辨率形成具有高矩形性的图案。
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公开(公告)号：US20130045444A1
公开(公告)日：2013-02-21
申请号：US13526057
申请日：2012-06-18
CPC分类号： G03F7/0397 , C07C381/12 , C08F220/34 , C08F220/36 , G03F7/11 , G03F7/20 , G03F7/2041 , G03F7/32 , H01L21/0273 , Y10S430/114 , Y10S430/115
摘要： There is disclosed a positive resist composition comprising (A) a resin having repeating units shown by the following general formulae (1) and (2) as repeating units that contain acid labile groups and being capable of increasing its alkaline solubility by an acid, (B) a photoacid generator, (C) a compound shown by the following general formula (3), and (D) a solvent. There can be a positive resist composition having high resolution, and at the same time giving an excellent pattern profile; and a patterning process in which an immersion lithography is carried out using a formed top coat.
摘要翻译： 公开了一种正型抗蚀剂组合物，其包含（A）具有以下通式（1）和（2）所示的重复单元的树脂作为含有酸不稳定基团并且能够通过酸增加其碱溶性的重复单元（ B）光致酸发生剂，（C）下述通式（3）所示的化合物和（D）溶剂。 可以具有高分辨率的正性抗蚀剂组合物，同时具有优异的图案图案; 以及使用形成的表面涂层进行浸渍光刻的图案化工艺。
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公开(公告)号：US20130065179A1
公开(公告)日：2013-03-14
申请号：US13604258
申请日：2012-09-05
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , G03F7/2041
摘要： There is disclosed a positive resist composition comprising (A) a specific resin (B) a photo acid generator, (C) a basic compound, and (D) a solvent. There can be a positive resist composition having, in a photolithography using a high energy beam such as an ArF excimer laser beam as a light source, an excellent resolution, especially excellent depth of focus (DOF) characteristics with an excellent pattern profile, and in addition, in formation of a contact hole pattern, giving a pattern having excellent circularity and high rectangularity; and a patterning process using this positive resist composition.
摘要翻译： 公开了一种正型抗蚀剂组合物，其包含（A）特定树脂（B）光酸产生剂，（C）碱性化合物和（D）溶剂。 可以存在正光致抗蚀剂组合物，其在使用诸如ArF准分子激光束的高能束作为光源的光刻中具有优异的分辨率，特别优异的聚焦深度（DOF）特性，具有优异的图案轮廓，并且在 此外，形成接触孔图形，赋予圆形性和高矩形性优异的图案; 以及使用该正性抗蚀剂组合物的图案化工艺。
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