公开(公告)号：US4977569A

公开(公告)日：1990-12-11

申请号：US382294

申请日：1989-07-20

申请人： Ryozo Furukawa ,  Keisuke Shinozaki ,  Toshiaki Fukunaga

发明人： Ryozo Furukawa ,  Keisuke Shinozaki ,  Toshiaki Fukunaga

IPC分类号： H01S5/00 ,  H01S5/24 ,  H01S5/40

CPC分类号： H01S5/24 ,  H01S5/4031

摘要： An integrated phase-locked semiconductor laser wherein a plurality of waveguide paths extend in parallel to each other. A current blocking layer is formed on one of opposite major surfaces of a semiconductor substrate and is divided into a plurality of regions by a plurality of stripe-like channels. Each of the channels has a depth which reaches at least the above-mentioned major surface of the substrate. A first cladding layer covers the surface of the current blocking layer and those regions of the substrate which are exposed to the channels. A waveguide layer is deposited on the first cladding layer and has a surface opposite to the first cladding layer which is substantially flat. An active layer, a reflecting layer, a second cladding layer and a cap layer are deposited one upon another on the waveguide layer layer. The waveguide layer has an effective refractive index which sequentially decreases in the order of first regions individually associated with the plurality of channels, second regions individually associated with interchannel regions each intervening between nearby channels, and third regions located at opposite sides of the plurality of channels relatively to each other.

公开(公告)号：US06396117B1

公开(公告)日：2002-05-28

申请号：US09246143

申请日：1999-02-08

申请人： Ryozo Furukawa ,  Masanobu Kato

发明人： Ryozo Furukawa ,  Masanobu Kato

IPC分类号： H01L3100

CPC分类号： H01L31/101 ,  G02B6/4204 ,  H01L31/02161 ,  H01L31/02162

摘要： Light on the longer wavelength side can be photoelectrically converted and output reliably, whilst improving the structural and operational reliability of a photodetector, by means of a simple manufacturing process and inexpensive manufacturing costs. A first light-absorbing layer, a buffer layer of a second conductivity type, a second light-absorbing layer of a second conductivity type and a window layer of a second conductivity type are laminated in this order onto the first principal surface of a substrate of a first conductivity type. The first light-absorbing layer contains a region of the first conductivity type and a region of the second conductivity type, and a diffused region of the first conductivity type having a depth extending from the upper face of the window layer to the interface between the window layer and the second light-absorbing layer is provided in a portion of the window layer. A main electrode of a first conductivity type is provided on the diffused region, whilst a main electrode of a second conductivity type is provided on the window layer in the vicinity of the diffused region. The energy gap wavelength of the second light-absorbing layer is longer than the energy gap wavelength of the first light-absorbing layer, whilst the energy gap wavelength of the first light-absorbing layer is longer than the respective energy gap wavelengths of the substrate, buffer layer and window layer.

摘要翻译： 较长波长侧的光可以通过简单的制造工艺和廉价的制造成本在可改善光电检测器的结构和操作可靠性的同时光电转换和输出。 将第一光吸收层，第二导电类型的缓冲层，第二导电类型的第二光吸收层和第二导电类型的窗口层依次层叠到基板的第一主表面上 第一导电类型。 第一光吸收层包含第一导电类型的区域和第二导电类型的区域，并且第一导电类型的扩散区域具有从窗口层的上表面延伸到窗口之间的界面的深度 并且第二光吸收层设置在窗口层的一部分中。 第一导电类型的主电极设置在扩散区域上，而第二导电类型的主电极设置在扩散区域附近的窗口层上。 第二光吸收层的能隙波长比第一光吸收层的能隙波长长，而第一光吸收层的能隙波长比衬底的各能隙波长长， 缓冲层和窗口层。

公开(公告)号：US06194771B1

公开(公告)日：2001-02-27

申请号：US09124071

申请日：1998-07-29

申请人： Masanobu Kato ,  Ryozo Furukawa

发明人： Masanobu Kato ,  Ryozo Furukawa

IPC分类号： H01L310236

CPC分类号： H01L31/02327 ,  H01L31/02161 ,  H01L31/105

摘要： A semiconductor light-receiving device includes a light-receiving section that receives an input light. The light-receiving section includes a light-receiving surface to which the input light is directed, a groove extending vertically into the light-receiving surface, and a thin film coated on the inside wall of the groove.

摘要翻译： 半导体光接收装置包括接收输入光的光接收部。 光接收部分包括输入光被引导的光接收表面，垂直延伸到光接收表面的凹槽和涂覆在凹槽的内壁上的薄膜。

公开(公告)号：US06483098B1

公开(公告)日：2002-11-19

申请号：US09447437

申请日：1999-11-23

申请人： Masanobu Kato ,  Ryozo Furukawa

发明人： Masanobu Kato ,  Ryozo Furukawa

IPC分类号： H01L3100

CPC分类号： H01L31/105 ,  G02B6/4214 ,  H01L21/30617 ,  H01L31/02327 ,  H01L31/035281 ,  Y02E10/50

摘要： In a semiconductor photodetector device having a slanting surface, an insulating film is formed over the slating surface as a reflective film under the condition that light is all reflected. Thus, a semiconductor device can be implemented which is high in sensibility and excellent in adhesion.

摘要翻译： 在具有倾斜面的半导体光电检测器件中，在光全部被反射的条件下，在作为反射膜的板状表面上形成绝缘膜。 因此，可以实现敏感性高，粘附性优异的半导体器件。

公开(公告)号：US06399968B2

公开(公告)日：2002-06-04

申请号：US09732728

申请日：2000-12-11

申请人： Masanobu Kato ,  Ryozo Furukawa

发明人： Masanobu Kato ,  Ryozo Furukawa

IPC分类号： H01L31072

CPC分类号： H01L31/02165 ,  H01L31/1035 ,  H01L31/105 ,  H01L31/109

摘要： The present invention provides a photoreceiving device that is inexpensive and has good properties as a photoreceiving device for selectively receiving long wavelength light. This is a semiconductor photoreceiving device 10 for selectively receiving long wavelength light from multiplexed light including long wavelength light A and short wavelength light B. This photoreceiving device comprises a multilayered film 22 comprising alternately stacked layers of materials having mutually different indexes of refraction and the thicknesses and number of which are designed so as to transmit said long wavelength light and reflect said short wavelength light; and a first light-absorbing layer 14 composed of a material having a band gap wavelength longer than the wavelength of said long wavelength light.

公开(公告)号：US06246097B1

公开(公告)日：2001-06-12

申请号：US09187001

申请日：1998-11-06

申请人： Masanobu Kato ,  Ryozo Furukawa

发明人： Masanobu Kato ,  Ryozo Furukawa

IPC分类号： H01L310232

CPC分类号： H01L27/14643 ,  H01L27/14685

摘要： At a semiconductor photodetector 100, a photodetection portion 120 is formed on a first substrate surface 110a of a substrate 110. In addition, a recess 110d is formed at a second substrate surface 110b of the substrate 110 which faces opposite the first substrate surface 110a. This recessed portion 110d is formed as a wedge-type V-shaped groove with a forward mesa surface formed at a front surface thereof, and is formed approximately parallel to a side photodetection surface 110c of the substrate 110 which is approximately perpendicular to the second substrate surface 110b. A total reflection film is coated on the front surface of the recess 110d. In the semiconductor photodetector 100 structured as described above, an incoming light P1 entering through the side photodetection surface 110c is reflected at the recess 110d to enter the photodetection portion 120 from the side where the substrate 110 is provided. As a result, the incoming light P1 is sensed at the photodetection portion 120.

摘要翻译： 在半导体光电检测器100处，在基板110的第一基板表面110a上形成光电检测部分120.此外，在基板110的与第一基板表面110a相对的第二基板表面110b处形成凹槽110d。 该凹部110d形成为在其前表面形成有前台面的楔形V形槽，并且大致平行于基板110的与第二基板垂直的侧面光检测面110c 表面110b。 全反射膜涂覆在凹槽110d的前表面上。 在如上所述构成的半导体光检测器100中，通过侧光检测面110c入射的入射光P1在凹部110d处被反射，从设置有基板110的一侧进入光检测部120。 结果，入射光P1在光电检测部分120处被感测。