DISPLAY PANEL HAVING IMPROVED CONDUCTIVE LAYER AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20200286979A1

    公开(公告)日:2020-09-10

    申请号:US16880001

    申请日:2020-05-21

    IPC分类号: H01L27/32 H01L27/12

    摘要: A display panel includes a first conductive layer including a first layer, a second layer, and a third layer sequentially stacked, and a second conductive layer on the first conductive layer and contacting the third layer. The first layer includes a first metal. The second layer includes the first metal and oxygen in a first composition ratio. The third layer includes the first metal and oxygen at a second composition ratio. The second composition ratio is smaller than the first composition ratio. Conductivity of the third layer is higher than conductivity of the second layer. The first composition ratio is a ratio of an atom percent of the first metal to an atom percent of oxygen in the second layer. The second composition ratio is a ratio of an atom percent of the first metal to an atom percent of oxygen in the third layer.

    DISPLAY DEVICE INCLUDING AN AUXILIARY LAYER

    公开(公告)号:US20210066555A1

    公开(公告)日:2021-03-04

    申请号:US16941102

    申请日:2020-07-28

    摘要: A display device is provided including a substrate. A second semiconductor layer is disposed on the substrate. The second semiconductor layer includes Si. A second gate lower electrode overlaps a channel region of the second semiconductor layer. A second gate insulating layer is disposed on the second gate lower electrode. A second gate upper electrode and a light blocking layer are disposed on the second gate insulating layer. A first auxiliary layer is disposed on the second gate upper electrode and the light blocking layer. A first semiconductor layer overlaps the light blocking layer. The first semiconductor layer includes an oxide semiconductor. A first gate electrode overlaps a channel region of the first semiconductor layer. Hie first auxiliary layer includes an insulating layer including at least one compound selected from SiNx, SiOx, and SiON, and at least one material selected from F, Cl, and C.