公开(公告)号：US20240021627A1

公开(公告)日：2024-01-18

申请号：US18300439

申请日：2023-04-14

申请人： Samsung Display Co., LTD.

发明人： Ki Hyun KIM ,  Young Gil PARK ,  Won Bong BAEK ,  Young Uook LEE

IPC分类号： H01L27/12 ,  H01L25/16 ,  H01L23/00

CPC分类号： H01L27/124 ,  H01L25/167 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L27/1218 ,  H01L24/08 ,  H01L24/16 ,  H01L2224/05073 ,  H01L2224/05573 ,  H01L2224/05026 ,  H01L2224/05563 ,  H01L2224/06181 ,  H01L2224/05686 ,  H01L2224/08145 ,  H01L2224/13021 ,  H01L2224/16225 ,  H01L2924/0549

摘要： A display device includes a substrate having a first surface in which a light-emitting element is disposed, a second surface, and a first lateral side; a connecting electrode disposed on the first surface; a first insulating layer disposed on the connecting electrode and including a contact hole; a first upper pad electrode electrically connected to the connecting electrode, the first upper pad electrode having a first thickness in an area not overlapping the contact hole and having a second thickness in an area overlapping the contact hole; a second upper pad electrode disposed on the first upper pad electrode and having a substantially flat profile; a lower pad disposed on the second surface of the substrate; and a side wiring electrically connecting the second upper pad electrode and the lower pad, the side wiring surrounding the first surface, the first lateral side, and the second surface of the substrate.

公开(公告)号：US20180341137A1

公开(公告)日：2018-11-29

申请号：US15816056

申请日：2017-11-17

申请人： Samsung Display Co., Ltd.

发明人： Se Joon OH ,  Se Jin KIM ,  Young Uook LEE ,  Jung Su LEE ,  Sang Yeoul LIM ,  So Mi JUNG ,  Young Min JUNG

IPC分类号： G02F1/1368

CPC分类号： G02F1/1368 ,  G02F1/1337 ,  G02F1/136227 ,  G02F2001/136222 ,  G02F2201/123 ,  G02F2201/50 ,  G02F2201/501

摘要： The display device includes: a substrate; a thin-film transistor disposed on the substrate; a passivation layer covering the thin-film transistor; a capping layer disposed on the passivation layer; and a pixel electrode disposed on the capping layer and connected to the thin-film transistor, wherein a thickness of the capping layer is determined according to: d1=(λ/2)×(1/2n), where d1 denotes the thickness of the capping layer, λ denotes a wavelength within visible wavelength range, and n denotes a ratio of refractive indices of the passivation layer to the capping layer.