Display apparatus including a touch driving circuit

    公开(公告)号:US10942597B2

    公开(公告)日:2021-03-09

    申请号:US16503741

    申请日:2019-07-05

    IPC分类号: G06F3/041

    摘要: A display apparatus includes a display panel, a touch sensing unit, and a touch driving circuit. The touch sensing unit includes a transmission touch line. The touch driving circuit provides a touch driving signal to the transmission touch line. The touch driving circuit may include a switch group and a control switch group. The switch group may include a plurality of switch devices, each of which has one end connected to the transmission touch line. The control switch group may be connected to the other end of at least a portion of the switch devices, include a plurality of control switch devices and a capacitor device, and receive a driving voltage and a ground voltage. The touch driving signal has N voltage levels, where N is a natural number of 3 or more.

    Data receiving circuit
    4.
    发明授权

    公开(公告)号:US11011214B2

    公开(公告)日:2021-05-18

    申请号:US16582322

    申请日:2019-09-25

    摘要: A data receiving circuit may include: a variable delay circuit suitable for generating a delayed strobe signal by delaying a strobe signal; a receiving circuit suitable for sampling data in synchronization with the delayed strobe signal; a phase shift circuit suitable for generating a shifted strobe signal by shifting a phase of the delayed strobe signal; a phase comparison circuit suitable for comparing phases of the data and the shifted strobe signal; and a delay adjusting circuit suitable for adjusting a delay value of the variable delay circuit in response to the phase comparison result of the phase comparison circuit.

    Bit line sense amplifier circuit capable of reducing offset voltage

    公开(公告)号:US10950279B2

    公开(公告)日:2021-03-16

    申请号:US16545805

    申请日:2019-08-20

    摘要: A BLSA circuit includes a first inverter disposed between a first sensing node and a second inner bit line, a second inverter disposed between a second sensing node and a first inner bit line, a first capacitor disposed between a first bit line and the first sensing node, a second capacitor disposed between a second bit line and the second sensing node, a first offset canceling switch for electrically coupling the first inner bit line with the second sensing node during an offset canceling operation, a second offset canceling switch for electrically coupling the second inner bit line with the first sensing node during the offset canceling operation, a first isolation switch for electrically coupling the first bit line with the first inner bit line, and a second isolation switch for electrically coupling the second bit line with the second inner bit line.

    Semiconductor memory device capable of adjusting a wordline voltage for a write operation

    公开(公告)号:US10861546B2

    公开(公告)日:2020-12-08

    申请号:US16572275

    申请日:2019-09-16

    IPC分类号: G11C11/00 G11C13/00

    摘要: A semiconductor memory device includes a memory cell array including a plurality of wordlines, a plurality of bitlines and a plurality of cells; a bitline decoder configured to couple a global bitline to one of the plurality of bitlines according to a bitline selection signal; a bitline driver configured to provide bitline current to the global bitline; a wordline decoder configured to couple a global wordline to one of the plurality of wordlines according to a wordline selection signal; a wordline driver configured to provide a wordline drive voltage to the global wordline during a write operation and to adjust the wordline drive voltage according to a write address; and a write control circuit configured to generate the wordline selection signal and the bitline selection signal, and to control the bitline decoder, the wordline decoder, and the bitline driver.

    Duty cycle detector and phase difference detector

    公开(公告)号:US10361692B2

    公开(公告)日:2019-07-23

    申请号:US16149687

    申请日:2018-10-02

    摘要: A duty cycle detector includes a first ring oscillator suitable for including an odd number of first inverters and generating a first periodic signal by using the first inverters, at least one inverter among the first inverters being enabled during a time interval when a clock has a first value, a second ring oscillator including an odd number of second inverters and suitable for generating a second periodic signal using the second inverters, at least one inverter among the second inverters being enabled during a time interval when the clock has a second value. The duty cycle detector further includes a frequency comparator suitable for comparing a frequency of the first periodic signal with a frequency of the second periodic signal and generating a duty cycle detection signal of the clock.

    Injection-locked oscillator and semiconductor device including the same

    公开(公告)号:US10284211B2

    公开(公告)日:2019-05-07

    申请号:US15494130

    申请日:2017-04-21

    IPC分类号: H03K3/03 H03L7/24 H03K5/156

    摘要: An injection-locked oscillator includes an oscillator and an injection circuit. The oscillator includes a first oscillation node through which a first oscillation signal is output and a second oscillation node through which a second oscillation signal is output, the second oscillation signal having a phase opposite to that of the first oscillation signal. The injection circuit provides an injection current between the first oscillation node and the second oscillation node according to a reference signal. The injection circuit includes a charging element configured to be charged or discharged in response to a reference signal and to provide the injection current between the first oscillation node and the second oscillation node.