公开(公告)号：US20160276449A1

公开(公告)日：2016-09-22

申请号：US14662697

申请日：2015-03-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DONG-IL BAE ,  Bomsoo KIM ,  Yong-Min CHO

IPC: H01L29/417 ,  H01L29/06 ,  H01L21/308 ,  H01L29/08 ,  H01L29/66 ,  H01L29/78 ,  H01L29/45

CPC classification number: H01L29/41791 ,  H01L21/308 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/45 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7851

Abstract: An semiconductor device is provided. A fin is disposed on a substrate, extending in a lengthwise direction. A first recess is disposed on a sidewall of the fin so that the fin 7and the first recess is arranged in a straight line along the lengthwise direction. A gate structure crosses the fin in the first direction crossing the lengthwise direction. A spacer is disposed on sidewalk of the gate structure. A source/drain region is disposed in the first recess. The source/drain region is formed under the spacer. A silicide layer is disposed on the source/drain region. The silicide layer and the source/drain region fill the first recess.

Abstract translation: 提供半导体器件。 翅片设置在基板上，沿长度方向延伸。 第一凹部设置在翅片的侧壁上，使得翅片7和第一凹部沿着长度方向布置成直线。 栅极结构在与长度方向交叉的第一方向上跨越翅片。 间隔件设置在门结构的人行道上。 源极/漏极区域设置在第一凹部中。 源极/漏极区形成在间隔物下方。 硅化物层设置在源极/漏极区域上。 硅化物层和源/漏区填充第一凹槽。