公开(公告)号：US20230240072A1

公开(公告)日：2023-07-27

申请号：US17930956

申请日：2022-09-09

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Dae-Hun CHOI ,  Jae Chul LEE ,  Byung-Sun PARK ,  Seung Jae SIM

IPC分类号： H01L27/11582 ,  G11C16/04 ,  H01L27/11565 ,  H01L27/11573 ,  H01L27/1157 ,  G11C5/06

CPC分类号： H01L27/11582 ,  G11C16/0483 ,  H01L27/11565 ,  H01L27/11573 ,  H01L27/1157 ,  G11C5/06

摘要： A non-volatile memory device includes a substrate having a cell array region and an extension region. A mold structure includes a plurality of gate electrodes and a plurality of mold insulating layers alternately stacked on the substrate such that the mold structure has a step shape that steps downwardly in the extension region in a direction away from the cell array region. A channel structure penetrates through the mold structure in the cell array region, and a cell contact structure penetrates through the mold structure in the extension region. A portion of the cell contact structure is in contact with a portion of an uppermost one of the gate electrodes. The cell contact structure includes a first portion in contact with a side surface of the uppermost one of the gate electrodes and a second portion in contact with a top surface of the uppermost one of the gate electrodes. A width of the first portion is smaller than a width of the second portion.

公开(公告)号：US20220136108A1

公开(公告)日：2022-05-05

申请号：US17577204

申请日：2022-01-17

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Byung-Sun PARK ,  Ik Soo KIM ,  Jiwoon IM ,  Sangho RHA ,  Minjae OH

IPC分类号： C23C16/455 ,  H01L21/67 ,  H01J37/32

摘要： A semiconductor manufacturing apparatus includes a chamber that includes a station in which a substrate is provided, a substrate holder that is in the station and receives the substrate, and lower showerheads below the substrate holder, the lower showerheads including an isotropic showerhead having first nozzle holes that isotropically provide a first reaction gas on a bottom surface of the substrate, and a striped showerhead having striped nozzle regions and striped blank regions between the striped nozzle regions, the striped nozzle regions having second nozzle holes that non-isotropically provide a second reaction gas on the bottom surface of the substrate.

公开(公告)号：US20200325579A1

公开(公告)日：2020-10-15

申请号：US16750557

申请日：2020-01-23

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Byung-Sun PARK ,  Ik Soo KIM ,  Jiwoon IM ,  Sangho RHA ,  Minjae OH

IPC分类号： C23C16/455 ,  H01J37/32 ,  H01L21/67

摘要： A semiconductor manufacturing apparatus includes a chamber that includes a station in which a substrate is provided, a substrate holder that is in the station and receives the substrate, and lower showerheads below the substrate holder, the lower showerheads including an isotropic showerhead having first nozzle holes that isotropically provide a first reaction gas on a bottom surface of the substrate, and a striped showerhead having striped nozzle regions and striped blank regions between the striped nozzle regions, the striped nozzle regions having second nozzle holes that non-isotropically provide a second reaction gas on the bottom surface of the substrate.