公开(公告)号：US20230240073A1

公开(公告)日：2023-07-27

申请号：US18063878

申请日：2022-12-09

申请人： Samsung Electronics Co., Ltd.

发明人： Yoonhwan SON ,  Miso KIM ,  Joongshik SHIN ,  Minjae OH

IPC分类号： H10B43/27 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/40 ,  H10B41/50 ,  H10B43/50 ,  H01L21/28

CPC分类号： H10B43/27 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/40 ,  H10B41/50 ,  H10B43/50 ,  H01L29/40117

摘要： A semiconductor device includes a substrate having a first region and a second region, a first stack structure in the first region, a first channel structure penetrating through the first stack structure and in contact with the substrate, and a second stack structure on the first stack structure and the first channel structure. The device includes a second channel structure penetrating through the second stack structure and connected to the first channel structure, a first molding structure in the second region, a first alignment structure penetrating through the first molding structure and in contact with the substrate, and a second molding structure on the first molding structure and the first alignment structure. The device includes a second alignment structure penetrating through the second molding structure and connected to the first alignment structure, and a protective layer between the first molding structure and the second molding structure.

公开(公告)号：US20220136108A1

公开(公告)日：2022-05-05

申请号：US17577204

申请日：2022-01-17

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Byung-Sun PARK ,  Ik Soo KIM ,  Jiwoon IM ,  Sangho RHA ,  Minjae OH

IPC分类号： C23C16/455 ,  H01L21/67 ,  H01J37/32

摘要： A semiconductor manufacturing apparatus includes a chamber that includes a station in which a substrate is provided, a substrate holder that is in the station and receives the substrate, and lower showerheads below the substrate holder, the lower showerheads including an isotropic showerhead having first nozzle holes that isotropically provide a first reaction gas on a bottom surface of the substrate, and a striped showerhead having striped nozzle regions and striped blank regions between the striped nozzle regions, the striped nozzle regions having second nozzle holes that non-isotropically provide a second reaction gas on the bottom surface of the substrate.

公开(公告)号：US20200325579A1

公开(公告)日：2020-10-15

申请号：US16750557

申请日：2020-01-23

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Byung-Sun PARK ,  Ik Soo KIM ,  Jiwoon IM ,  Sangho RHA ,  Minjae OH

IPC分类号： C23C16/455 ,  H01J37/32 ,  H01L21/67

摘要： A semiconductor manufacturing apparatus includes a chamber that includes a station in which a substrate is provided, a substrate holder that is in the station and receives the substrate, and lower showerheads below the substrate holder, the lower showerheads including an isotropic showerhead having first nozzle holes that isotropically provide a first reaction gas on a bottom surface of the substrate, and a striped showerhead having striped nozzle regions and striped blank regions between the striped nozzle regions, the striped nozzle regions having second nozzle holes that non-isotropically provide a second reaction gas on the bottom surface of the substrate.