公开(公告)号：US20220413963A1

公开(公告)日：2022-12-29

申请号：US17900336

申请日：2022-08-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： CHULSEUNG LEE ,  SOON SUK HWANG ,  CHOONGEUI LEE

IPC: G06F11/10 ,  G11C29/52 ,  G06F3/06 ,  G11C7/10 ,  G11C7/22

Abstract: A storage device includes a nonvolatile memory device, and a controller that reads first data from the nonvolatile memory device. When a number of first errors of the first data is not smaller than a first threshold value, the controller determines whether the first errors include timing errors arising from a variation of signal transmission timings between the nonvolatile memory device and the controller and performs a retraining operation on the signal transmission timings when the first errors include the timing errors.

公开(公告)号：US20210200634A1

公开(公告)日：2021-07-01

申请号：US17198315

申请日：2021-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： CHULSEUNG LEE ,  SOON SUK HWANG ,  CHOONGEUI LEE

IPC: G06F11/10 ,  G11C29/52 ,  G06F3/06 ,  G11C7/10 ,  G11C7/22

Abstract: A storage device includes a nonvolatile memory device, and a controller that reads first data from the nonvolatile memory device. When a number of first errors of the first data is not smaller than a first threshold value, the controller determines whether the first errors include timing errors arising from a variation of signal transmission timings between the nonvolatile memory device and the controller and performs a retraining operation on the signal transmission timings when the first errors include the timing errors.

公开(公告)号：US20190354431A1

公开(公告)日：2019-11-21

申请号：US16248540

申请日：2019-01-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： CHULSEUNG LEE ,  SOON SUK HWANG ,  CHOONGEUI LEE

IPC: G06F11/10 ,  G11C29/52 ,  G06F3/06 ,  G11C7/10 ,  G11C7/22

Abstract: A storage device includes a nonvolatile memory device, and a controller that reads first data from the nonvolatile memory device. When a number of first errors of the first data is not smaller than a first threshold value, the controller determines whether the first errors include timing errors arising from a variation of signal transmission timings between the nonvolatile memory device and the controller and performs a retraining operation on the signal transmission timings when the first errors include the timing errors.

公开(公告)号：US20190004984A1

公开(公告)日：2019-01-03

申请号：US15871637

申请日：2018-01-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： CHULSEUNG LEE ,  TAESUNG LEE ,  CHOONGEUI LEE ,  SOON SUK HWANG

IPC: G06F13/16 ,  G06F13/12 ,  G06K9/62 ,  G06F15/18

CPC classification number: G06F13/1689 ,  G06F13/126 ,  G06F13/1657 ,  G06K9/6255 ,  G06N20/00

Abstract: A data training method of a storage device, which includes a storage controller and a nonvolatile memory device, includes transmitting a read training command to the nonvolatile memory device, receiving a first training pattern output from the nonvolatile memory device in response to the read training command, receiving a second training pattern output from the nonvolatile memory device in response to the read training command, comparing the received first training pattern and the received second training pattern with a reference pattern, and determining a read timing offset of the storage controller depending on the comparison result.