公开(公告)号：US20170053683A1

公开(公告)日：2017-02-23

申请号：US15198564

申请日：2016-06-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SEONKYOO LEE ,  TAESUNG LEE ,  JEONGDON IHM ,  BYUNGHOON JEONG

IPC: G11C7/22 ,  G11C7/10

CPC classification number: G11C7/22 ,  G06F11/10 ,  G11C7/106 ,  G11C7/1066 ,  G11C7/1087 ,  G11C7/1093 ,  G11C16/32

Abstract: A semiconductor device of the inventive concept includes a timing circuit configured to receive a first timing signal of a first pulse width from an external device and output a second timing signal having a pulse width which is gradually being reduced from a second pulse width longer than the pulse width of the first timing signal, and a data input/output circuit receiving the second timing signal and outputting data to the external device in synchronization with the second timing signal.

Abstract translation: 本发明构思的半导体器件包括：定时电路，被配置为从外部设备接收第一脉冲宽度的第一定时信号，并输出第二定时信号，该第二定时信号具有从第二脉冲宽度逐渐减小的脉冲宽度 第一定时信号的脉冲宽度和接收第二定时信号的数据输入/输出电路，并且与第二定时信号同步地将数据输出到外部设备。

公开(公告)号：US20240223187A1

公开(公告)日：2024-07-04

申请号：US18381611

申请日：2023-10-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younggyu Lee ,  TONGSUNG KIM ,  SEUNGJUN BAE ,  SEONKYOO LEE ,  TAESUNG LEE

IPC: H03K19/00 ,  H03K19/017 ,  H03K19/17784

CPC classification number: H03K19/0005 ,  H03K19/01721 ,  H03K19/17784

Abstract: A semiconductor memory device may include an impedance adjustment pad, a dummy pull-down driver and an external resistor connected in parallel between the impedance adjustment pad and a ground, a recursive code generation circuit configured to recursively generate a pull-up code and a pull-down code corresponding to a target resistance by using the external resistor and the dummy pull-down driver as a reference resistance, in an impedance calibration operation of the semiconductor memory device, a code register configured to store the generated pull-up code and the pull-down code, and a calibration control logic circuit configured to control the recursive code generation circuit during a plurality of steps in the impedance calibration operation while adjusting a resistance value of the dummy pull-down driver.

公开(公告)号：US20200042232A1

公开(公告)日：2020-02-06

申请号：US16390077

申请日：2019-04-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： TAESUNG LEE ,  JUNGHWAN CHOI

IPC: G06F3/06 ,  G06F12/02 ,  G06F12/0866

Abstract: A semiconductor memory module includes data buffers that exchange first data signals with an external device, nonvolatile memory devices that are respectively connected to the data buffers through data lines, and a controller connected to the data lines. The controller receives an address, a command, and a control signal from the external device, and depending on the address, the command, and the control signal, the controller controls the data buffers through first control lines and controls the nonvolatile memory devices through second control lines.

公开(公告)号：US20170125115A1

公开(公告)日：2017-05-04

申请号：US15403923

申请日：2017-01-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DONG-SU JANG ,  TAESUNG LEE

IPC: G11C16/32

CPC classification number: G11C16/32 ,  G11C7/22 ,  G11C29/022 ,  G11C29/023 ,  G11C29/028 ,  G11C2029/4402

Abstract: A nonvolatile memory device includes a data path; and a FIFO memory including a plurality of registers connected to the data path. The plurality of registers sequentially receive data from the data path in response to data path input clocks and sequentially output the received data to an input/output pad in response to data path output clocks. The data path output clocks are clocks that are generated by delaying the data path input clocks as long as a delay time.

公开(公告)号：US20240072773A1

公开(公告)日：2024-02-29

申请号：US18331223

申请日：2023-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： DAEHOON NA ,  SEONKYOO LEE ,  SEUNGJUN BAE ,  TAESUNG LEE

IPC: H03K3/013 ,  G06F13/16 ,  G11C7/10 ,  G11C7/22 ,  H03K3/017

CPC classification number: H03K3/013 ,  G06F13/1668 ,  G11C7/1093 ,  G11C7/222 ,  H03K3/017 ,  G06F2213/16

Abstract: An equalizer includes a first pulse width controller that is configured to generate a first signal by increasing a first pulse width of a first data signal having a first logic level, the first data signal corresponding to a current data bit, a second pulse width controller that is configured to generate a second signal by increasing a second pulse width of the first data signal having a second logic level, a first sampler that is configured to generate a first sampled signal by sampling the first signal, a second sampler that is configured to generate a second sampled signal by sampling the second signal, and a multiplexer that is configured to output the first sampled signal or the second sampled signal based on a value of a previous data bit.

公开(公告)号：US20170186491A1

公开(公告)日：2017-06-29

申请号：US15461241

申请日：2017-03-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JANGWOO LEE ,  KYOUNGTAE KANG ,  TAESUNG LEE ,  JEONGDON IHM

IPC: G11C16/26 ,  G11C16/32

CPC classification number: G11C16/26 ,  G11C16/30 ,  G11C16/32

Abstract: A strobe signal shaping method for a data storage system includes receiving a strobe signal; boosting a first clock edge portion of the strobe signal when the strobe signal is received after having been idle or paused over a predetermined time period; and returning to an operating mode in which boosting is turned off with respect to a second clock edge portion of the strobe signal.

公开(公告)号：US20190004984A1

公开(公告)日：2019-01-03

申请号：US15871637

申请日：2018-01-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： CHULSEUNG LEE ,  TAESUNG LEE ,  CHOONGEUI LEE ,  SOON SUK HWANG

IPC: G06F13/16 ,  G06F13/12 ,  G06K9/62 ,  G06F15/18

CPC classification number: G06F13/1689 ,  G06F13/126 ,  G06F13/1657 ,  G06K9/6255 ,  G06N20/00

Abstract: A data training method of a storage device, which includes a storage controller and a nonvolatile memory device, includes transmitting a read training command to the nonvolatile memory device, receiving a first training pattern output from the nonvolatile memory device in response to the read training command, receiving a second training pattern output from the nonvolatile memory device in response to the read training command, comparing the received first training pattern and the received second training pattern with a reference pattern, and determining a read timing offset of the storage controller depending on the comparison result.

公开(公告)号：US20150348605A1

公开(公告)日：2015-12-03

申请号：US14600366

申请日：2015-01-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： DONG-SU JANG ,  TAESUNG LEE

IPC: G11C8/18 ,  G11C8/06

CPC classification number: G11C16/32 ,  G11C7/22 ,  G11C29/022 ,  G11C29/023 ,  G11C29/028 ,  G11C2029/4402

Abstract: A nonvolatile memory device includes a data path; and a FIFO memory including a plurality of registers connected to the data path. The plurality of registers sequentially receive data from the data path in response to data path input clocks and sequentially output the received data to an input/output pad in response to data path output clocks. The data path output clocks are clocks that are generated by delaying the data path input clocks as long as a delay time.

Abstract translation: 非易失性存储器件包括数据通路; 以及包括连接到数据路径的多个寄存器的FIFO存储器。 多个寄存器响应于数据路径输入时钟顺序地从数据路径接收数据，并且响应于数据路径输出时钟顺序地将接收的数据输出到输入/输出焊盘。 数据路径输出时钟是通过延迟数据通道输入时钟而产生的时钟，只要延迟时间。

公开(公告)号：US20150294730A1

公开(公告)日：2015-10-15

申请号：US14600353

申请日：2015-01-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JANGWOO LEE ,  KYOUNGTAE KANG ,  TAESUNG LEE ,  JEONGDON IHM

IPC: G11C16/32

CPC classification number: G11C16/26 ,  G11C16/30 ,  G11C16/32

Abstract: A strobe signal shaping method for a data storage system includes receiving a strobe signal; boosting a first clock edge portion of the strobe signal when the strobe signal is received after having been idle or paused over a predetermined time period; and returning to an operating mode in which boosting is turned off with respect to a second clock edge portion of the strobe signal.

Abstract translation: 数据存储系统的选通信号整形方法包括接收选通信号; 当在预定时间段内空闲或暂停之后接收到选通信号时，提升选通信号的第一时钟边缘部分; 并且返回到相对于选通信号的第二时钟边缘部分关闭升压的操作模式。