公开(公告)号：US10734082B2

公开(公告)日：2020-08-04

申请号：US16275108

申请日：2019-02-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Han-Jun Lee ,  Seung-Bum Kim ,  Chul-Bum Kim ,  Seung-Jae Lee

IPC: G11C16/28 ,  G11C16/34 ,  G11C16/16 ,  G11C8/14 ,  G11C16/24 ,  G11C7/18 ,  G11C16/08 ,  G11C29/08 ,  G11C7/04

Abstract: A memory device includes multiple word lines. A method of operating the memory device includes: performing a first dummy read operation, with respect to first memory cells connected to a first word line among the word lines, by applying a dummy read voltage, having an offset level of a first level, to the first word line; determining, based on a result of the performing of the first dummy read operation, degradation of a threshold voltage distribution of the first memory cells; adjusting an offset level of the dummy read voltage as a second level, based on a result of the determining of the threshold voltage distribution; and performing a second dummy read operation with respect to second memory cells connected to a second word line among the word lines, by applying a dummy read voltage, having the offset level adjusted as the second level, to the second word line among the word lines.

公开(公告)号：US09928006B2

公开(公告)日：2018-03-27

申请号：US15262478

申请日：2016-09-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chul-Bum Kim ,  Dong-Ku Kang

IPC: G06F3/06

CPC classification number: G06F3/0655 ,  G06F3/061 ,  G06F3/0626 ,  G06F3/0659 ,  G06F3/0679 ,  G06F3/0688

Abstract: A memory device may include an input/output control unit for receiving input signals through an input/output bus, and a control logic unit for receiving control signals, and when the control signals satisfy first through fourth conditions, the control logic unit identifies a command, an address, data and an identifier of the memory device in the input signals, and latches the input signals. The fourth condition is different from the first through third conditions.

公开(公告)号：US11049547B1

公开(公告)日：2021-06-29

申请号：US16986019

申请日：2020-08-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Han-Jun Lee ,  Seung-Bum Kim ,  Chul-Bum Kim ,  Seung-Jae Lee

IPC: G11C11/408 ,  G11C11/4099 ,  G11C11/4093 ,  G11C11/4074 ,  G11C5/02 ,  G11C29/02 ,  G11C29/50

Abstract: A memory device includes multiple word lines. A method of operating the memory device includes: performing a first dummy read operation, with respect to first memory cells connected to a first word line among the word lines, by applying a dummy read voltage, having an offset level of a first level, to the first word line; determining, based on a result of the performing of the first dummy read operation, degradation of a threshold voltage distribution of the first memory cells; adjusting an offset level of the dummy read voltage as a second level, based on a result of the determining of the threshold voltage distribution; and performing a second dummy read operation with respect to second memory cells connected to a second word line among the word lines, by applying a dummy read voltage, having the offset level adjusted as the second level, to the second word line among the word lines.