Nonvolatile memory device and method of operating the same
    1.
    发明授权
    Nonvolatile memory device and method of operating the same 有权
    非易失存储器件及其操作方法

    公开(公告)号:US09189174B2

    公开(公告)日:2015-11-17

    申请号:US13904047

    申请日:2013-05-29

    Abstract: Provided are a nonvolatile memory device and a method for operating the nonvolatile memory device. The method for operating the nonvolatile memory device includes generating a first program voltage, applying the generated first program voltage to a first word line to which a first memory cell is connected for performing a first program operation on the first memory cell, determining whether a number of pulses of a pumping clock signal for generating the first program voltage is greater than or equal to a predetermined critical value n (where n is a natural number), and stopping the performing of the first program operation on the first memory cell when the number of pulses of the pumping clock signal is determined to be greater than or equal to the predetermined critical value n.

    Abstract translation: 提供了一种用于操作非易失性存储器件的非易失性存储器件和方法。 用于操作非易失性存储器件的方法包括产生第一编程电压,将产生的第一编程电压施加到连接有第一存储单元的第一字线用于对第一存储器单元执行第一程序操作,确定数字 用于产生第一编程电压的泵浦时钟信号的脉冲大于或等于预定临界值n(其中n是自然数),并且当数量为第一存储器单元的数量时停止执行第一程序操作 泵浦时钟信号的脉冲被确定为大于或等于预定临界值n。

    Nonvolatile memory and storage device including same

    公开(公告)号:US12002514B2

    公开(公告)日:2024-06-04

    申请号:US17706097

    申请日:2022-03-28

    CPC classification number: G11C16/10 G11C16/0483 G11C16/3459 G11C8/12

    Abstract: A nonvolatile memory may include; a first memory cell array including a first selection transistor connected to a first string selection line, a second memory cell array including a second selection transistor connected to a second string selection line and spaced apart from the first string selection line by a first cutting line, and a peripheral circuit. The peripheral circuit may provide a first program voltage to the first selection transistor, provide a second program voltage to the second selection transistor different from the first program voltage, program the first selection transistor with a first threshold voltage in response to the first program voltage, and program the second selection transistor with a second threshold voltage level greater than the first threshold voltage in response to the second program voltage.

    Flash memory device and method of programming same
    3.
    发明授权
    Flash memory device and method of programming same 有权
    闪存设备及其编程方法相同

    公开(公告)号:US08705284B2

    公开(公告)日:2014-04-22

    申请号:US13891657

    申请日:2013-05-10

    CPC classification number: G11C16/10 G11C16/3404

    Abstract: A flash memory device includes a memory cell array made up of memory cells arranged in rows and columns. A first page of data is programmed in selected memory cells of the memory cell array, and a second page of data is subsequently programmed in the selected memory cells. The first page of data is programmed using a program voltage having a first start value, and the second page of data is programmed using a program voltage having a second start value determined by a programming characteristic of the selected memory cells.

    Abstract translation: 闪速存储器件包括由以行和列排列的存储单元组成的存储单元阵列。 数据的第一页被编程在存储单元阵列的选定的存储单元中,随后在所选存储单元中编程第二页数据。 使用具有第一起始值的编程电压对数据的第一页进行编程,并且使用具有由所选存储单元的编程特性确定的第二起始值的编程电压对第二数据页进行编程。

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