公开(公告)号：US09666434B2

公开(公告)日：2017-05-30

申请号：US15064628

申请日：2016-03-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaehee Kim ,  Dae-Yong Kang ,  SoonMok Ha ,  Joonsoo Park

IPC: H01L21/311 ,  H01L21/033 ,  H01L21/768

CPC classification number: H01L21/0338 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/76816 ,  H01L21/76877 ,  H01L27/10852 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11582

Abstract: A method for forming fine patterns includes patterning a hard mask layer on an etch target layer to form sacrificial pillars and a first opening disposed between the sacrificial pillars and exposing the etch target layer, forming a block copolymer layer on the etch target layer exposed through the first opening, phase-separating the block copolymer layer to form first block patterns spaced apart from the sacrificial pillars and a second block pattern, forming first holes by etching the etch target layer exposed by removing the first block patterns, and forming second holes in the etch target layer exposed by removing the sacrificial pillars, the second holes being different from the first holes.