公开(公告)号：US10096603B2

公开(公告)日：2018-10-09

申请号：US15230585

申请日：2016-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Heejung Kim ,  Seok-Won Cho ,  Joonsoo Park ,  SoonMok Ha

IPC: H01L27/108 ,  H01L27/11582 ,  H01L49/02

Abstract: A method of fabricating a semiconductor device includes forming first cell patterns on a substrate, forming a first layer relative to the first cell patterns, and forming a second cell pattern and a peripheral pattern on the first layer. The second cell pattern includes first holes in a cell region and the peripheral pattern is located in a peripheral region. The method also includes filling the first holes, removing the second cell pattern to expose pillars, and forming second holes. Each of the second holes corresponds to adjacent cell spacers of the pillars. The method also includes removing the pillars to form third holes corresponding to respective ones of the cell spacers, and etching the substrate using the cell spacers, the first cell patterns, and the peripheral pattern as etch masks to form a trench.

公开(公告)号：US09666434B2

公开(公告)日：2017-05-30

申请号：US15064628

申请日：2016-03-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaehee Kim ,  Dae-Yong Kang ,  SoonMok Ha ,  Joonsoo Park

IPC: H01L21/311 ,  H01L21/033 ,  H01L21/768

CPC classification number: H01L21/0338 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/76816 ,  H01L21/76877 ,  H01L27/10852 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11582

Abstract: A method for forming fine patterns includes patterning a hard mask layer on an etch target layer to form sacrificial pillars and a first opening disposed between the sacrificial pillars and exposing the etch target layer, forming a block copolymer layer on the etch target layer exposed through the first opening, phase-separating the block copolymer layer to form first block patterns spaced apart from the sacrificial pillars and a second block pattern, forming first holes by etching the etch target layer exposed by removing the first block patterns, and forming second holes in the etch target layer exposed by removing the sacrificial pillars, the second holes being different from the first holes.