公开(公告)号：US20170040515A1

公开(公告)日：2017-02-09

申请号：US15184737

申请日：2016-06-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin Bock LEE ,  Su Yeol LEE ,  Dong Hyuk JOO

IPC: H01L33/62 ,  H01L33/38 ,  H01L33/50 ,  H01L27/15 ,  H01L33/00 ,  H01L33/56 ,  H01L33/20 ,  H01L33/32

CPC classification number: H01L33/62 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/42 ,  H01L33/44 ,  H01L33/502 ,  H01L33/54 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2924/181 ,  H01L2933/0016 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A semiconductor light emitting device is provided. The device includes a semiconductor stack, insulating layers, a current spreading layer, and first and second finger electrodes. The semiconductor stack includes a first and second conductivity-type semiconductor layers, an active layer between the first and second conductivity-type semiconductor layers, and a trench penetrating through the second conductivity-type semiconductor layer and the active layer to expose a portion of the first conductivity-type semiconductor layer. A first insulating layer is disposed on an inner sidewall of the trench. The current spreading layer is disposed on the second conductivity-type semiconductor layer. The first finger electrode is disposed on the exposed portion of the first conductivity-type semiconductor layer. The second insulating layer is disposed on the exposed portion of the first conductivity-type semiconductor layer to cover the first finger electrode. The second finger electrode is disposed in the trench and connected to the current spreading layer.

Abstract translation: 提供半导体发光器件。 该器件包括半导体叠层，绝缘层，电流扩展层以及第一和第二指状电极。 半导体堆叠包括第一和第二导电类型半导体层，第一和第二导电类型半导体层之间的有源层和穿过第二导电类型半导体层和有源层的沟槽，以暴露部分 第一导电型半导体层。 第一绝缘层设置在沟槽的内侧壁上。 电流扩散层设置在第二导电型半导体层上。 第一指状电极设置在第一导电型半导体层的露出部分上。 第二绝缘层设置在第一导电类型半导体层的暴露部分上以覆盖第一指状电极。 第二指状电极设置在沟槽中并连接到电流扩散层。