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    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    1.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20130320351A1

    公开(公告)日：2013-12-05

    申请号：US13906044

    申请日：2013-05-30

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Seong Seok YANG ,  Ki Seok KIM ,  Je Won KIM ,  Ju Bin SEO ,  Sang Seok LEE ,  Joon Sub LEE ,  Jin Bock LEE

    IPC分类号： H01L33/36 ,  H01L33/02

    CPC分类号： H01L33/36 ,  H01L27/15 ,  H01L33/02

    摘要： A semiconductor light emitting device is provided and includes a protective element including a first lower conductivity-type semiconductor layer and a second lower conductivity-type semiconductor layer. First and second lower electrodes are connected to the first lower conductivity-type semiconductor layer and the second lower conductivity-type semiconductor layer, respectively. A light emitting structure includes a first upper conductivity-type semiconductor layer, an active layer, and a second upper conductivity-type semiconductor layer sequentially formed on the protective element. First and second upper electrodes are connected to the first upper conductivity-type semiconductor layer and the second upper conductivity-type semiconductor layer, respectively.

    摘要翻译： 提供了半导体发光器件，并且包括具有第一下导电型半导体层和第二下导电型半导体层的保护元件。 第一和第二下电极分别连接到第一下导电型半导体层和第二下导电型半导体层。 发光结构包括依次形成在保护元件上的第一上导电型半导体层，有源层和第二上导电型半导体层。 第一上电极和第二上电极分别连接到第一上导电型半导体层和第二上导电型半导体层。

    VERTICAL NITRIDE-BASED LIGHT EMITTING DIODE HAVING OHMIC CONTACT PATTERN AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    VERTICAL NITRIDE-BASED LIGHT EMITTING DIODE HAVING OHMIC CONTACT PATTERN AND METHOD OF MANUFACTURING THE SAME 审中-公开
    具有OHMIC接触图案的基于氮化物的发光二极管及其制造方法

    公开(公告)号：US20140106483A1

    公开(公告)日：2014-04-17

    申请号：US14109420

    申请日：2013-12-17

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Jin Bock LEE ,  Jin Hyun LEE ,  Hee Seok PARK ,  Pun Jae CHOI ,  Jong In YANG

    IPC分类号： H01L33/62

    CPC分类号： H01L33/62 ,  H01L21/268 ,  H01L33/40 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Provided is a vertical nitride-based LED including a first electrode; a first nitride semiconductor layer that is disposed on the first electrode; an active layer that is disposed on the first nitride semiconductor layer; a second nitride semiconductor layer that is disposed on the active layer; an ohmic contact pattern that is disposed on the second nitride semiconductor layer; a second electrode that is disposed on the ohmic contact pattern; and a bonding pad that is electrically connected to the second electrode and disposed on the second nitride semiconductor layer.

    摘要翻译： 提供了包括第一电极的垂直氮化物基LED; 设置在所述第一电极上的第一氮化物半导体层; 设置在所述第一氮化物半导体层上的有源层; 设置在所述有源层上的第二氮化物半导体层; 设置在所述第二氮化物半导体层上的欧姆接触图案; 设置在所述欧姆接触图案上的第二电极; 以及与第二电极电连接并设置在第二氮化物半导体层上的接合焊盘。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    5.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
    半导体发光器件及其制造方法

    公开(公告)号：US20150140707A1

    公开(公告)日：2015-05-21

    申请号：US14607851

    申请日：2015-01-28

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Jae Yoon KIM ,  Jin Bock LEE ,  Seok Min HWANG ,  Su Yeol LEE

    IPC分类号： H01L33/00

    CPC分类号： H01L33/005 ,  H01L33/32 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L2933/0016 ,  H01L2933/0058

    摘要： A semiconductor light emitting device includes: a light emission structure in which a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer are sequentially stacked; a first electrode formed on the first conductive semiconductor layer; an insulating layer formed on the second conductive semiconductor layer and made of a transparent material; a reflection unit formed on the insulating layer and reflecting light emitted from the active layer; a second electrode formed on the reflection unit; and a transparent electrode formed on the second conductive semiconductor layer, the transparent electrode being in contact with the insulating layer and the second electrode.

    摘要翻译： 半导体发光器件包括：发光结构，其中第一导电半导体层，有源层和第二导电半导体层顺序地堆叠; 形成在所述第一导电半导体层上的第一电极; 形成在所述第二导电半导体层上并由透明材料制成的绝缘层; 反射单元，形成在所述绝缘层上并反射从所述有源层发射的光; 形成在反射单元上的第二电极; 以及形成在所述第二导电半导体层上的透明电极，所述透明电极与所述绝缘层和所述第二电极接触。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    6.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    半导体发光器件及其制造方法

    公开(公告)号：US20170040515A1

    公开(公告)日：2017-02-09

    申请号：US15184737

    申请日：2016-06-16

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Jin Bock LEE ,  Su Yeol LEE ,  Dong Hyuk JOO

    IPC分类号： H01L33/62 ,  H01L33/38 ,  H01L33/50 ,  H01L27/15 ,  H01L33/00 ,  H01L33/56 ,  H01L33/20 ,  H01L33/32

    CPC分类号： H01L33/62 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/382 ,  H01L33/42 ,  H01L33/44 ,  H01L33/502 ,  H01L33/54 ,  H01L2224/16245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2924/181 ,  H01L2933/0016 ,  H01L2924/00014 ,  H01L2924/00012

    摘要： A semiconductor light emitting device is provided. The device includes a semiconductor stack, insulating layers, a current spreading layer, and first and second finger electrodes. The semiconductor stack includes a first and second conductivity-type semiconductor layers, an active layer between the first and second conductivity-type semiconductor layers, and a trench penetrating through the second conductivity-type semiconductor layer and the active layer to expose a portion of the first conductivity-type semiconductor layer. A first insulating layer is disposed on an inner sidewall of the trench. The current spreading layer is disposed on the second conductivity-type semiconductor layer. The first finger electrode is disposed on the exposed portion of the first conductivity-type semiconductor layer. The second insulating layer is disposed on the exposed portion of the first conductivity-type semiconductor layer to cover the first finger electrode. The second finger electrode is disposed in the trench and connected to the current spreading layer.

    摘要翻译： 提供半导体发光器件。 该器件包括半导体叠层，绝缘层，电流扩展层以及第一和第二指状电极。 半导体堆叠包括第一和第二导电类型半导体层，第一和第二导电类型半导体层之间的有源层和穿过第二导电类型半导体层和有源层的沟槽，以暴露部分 第一导电型半导体层。 第一绝缘层设置在沟槽的内侧壁上。 电流扩散层设置在第二导电型半导体层上。 第一指状电极设置在第一导电型半导体层的露出部分上。 第二绝缘层设置在第一导电类型半导体层的暴露部分上以覆盖第一指状电极。 第二指状电极设置在沟槽中并连接到电流扩散层。

    NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE
    7.
    发明申请
    NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    纳米结构半导体发光器件

    公开(公告)号：US20160064609A1

    公开(公告)日：2016-03-03

    申请号：US14838635

    申请日：2015-08-28

    申请人： Samsung Electronics Co., Ltd.

    发明人： Nam Goo CHA ,  Jin Bock LEE ,  Dong Kuk LEE ,  Dong Hyun CHO ,  Min Wook CHOI

    IPC分类号： H01L33/24 ,  H01L33/06 ,  H01L33/54 ,  H01L33/38 ,  H01L33/32 ,  H01L33/00 ,  H01L33/08

    CPC分类号： H01L33/24 ,  H01L33/0075 ,  H01L33/08 ,  H01L33/38 ,  H01L2224/48091 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2924/00014 ,  H01L2924/00012

    摘要： A nanostructure semiconductor light emitting device may include a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on the base layer, each of which including a nanocore formed of a first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; a contact electrode disposed on the light emitting nanostructures to be connected to the second conductivity-type semiconductor layer; a first electrode connected to the base layer; and a second electrode covering a portion of the contact electrode disposed on at least one of light emitting nanostructures disposed in the second region among the plurality of light emitting nanostructures, wherein light emitting nanostructures disposed in the second region and light emitting nanostructures disposed in the first region among the plurality of light emitting nanostructures have different shapes.

    摘要翻译： 纳米结构半导体发光器件可以包括具有第一和第二区域并由第一导电型半导体材料形成的基极层; 设置在基底层上的多个发光纳米结构，每个发光纳米结构包括由第一导电型半导体材料形成的纳米孔，以及顺序地设置在纳米孔上的有源层和第二导电型半导体层; 设置在所述发光纳米结构上以与所述第二导电类型半导体层连接的接触电极; 连接到所述基底层的第一电极; 以及覆盖设置在多个发光纳米结构中的第二区域中的发光纳米结构中的至少一个发光纳米结构的接触电极的一部分的第二电极，其中设置在第二区域中的发光纳米结构和设置在第一区域中的发光纳米结构 多个发光纳米结构中的区域具有不同的形状。

    NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE
    8.
    发明申请
    NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    纳米结构半导体发光器件

    公开(公告)号：US20160049553A1

    公开(公告)日：2016-02-18

    申请号：US14828004

    申请日：2015-08-17

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Sung Hyun SIM ,  Geon Wook YOO ,  Mi Hyun KIM ,  Dong Hoon LEE ,  Jin Bock LEE ,  Je Won KIM ,  Hye Seok NOH ,  Dong Kuk LEE

    IPC分类号： H01L33/24 ,  H01L33/14 ,  H01L33/08

    CPC分类号： H01L33/24 ,  F21K9/232 ,  F21Y2115/10 ,  H01L33/08 ,  H01L33/38

    摘要： A nanostructure semiconductor light emitting device may includes: a base layer having first and second regions and formed of a first conductivity-type semiconductor material; a plurality of light emitting nanostructures disposed on an upper surface of the base layer, each of which including a nanocore formed of the first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on the nanocore; and a contact electrode disposed on the plurality of light emitting nanostructures, wherein a tip portion of each of light emitting nanostructures disposed on the first region may not be covered with the contact electrode, and a tip portion of each of light emitting nanostructures disposed on the second region may be covered with the contact electrode.

    摘要翻译： 纳米结构半导体发光器件可以包括：具有第一和第二区域并由第一导电型半导体材料形成的基极层; 多个发光纳米结构，其设置在所述基底层的上表面上，每一个包括由所述第一导电型半导体材料形成的纳米孔，以及依次设置在所述纳米孔上的有源层和第二导电型半导体层; 以及设置在所述多个发光纳米结构上的接触电极，其中设置在所述第一区域上的每个发光纳米结构的末端部分可以不被所述接触电极覆盖，并且每个所述发光纳米结构的顶端部分设置在所述第一区域上 第二区域可以被接触电极覆盖。