公开(公告)号：US20170040489A1

公开(公告)日：2017-02-09

申请号：US15297647

申请日：2016-10-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam-Goo CHA ,  Dong-Ho KIM ,  Geon-Wook YOO

IPC: H01L33/06 ,  H01L33/18 ,  H01L33/40 ,  H01L33/08 ,  H01L33/24

CPC classification number: H01L33/06 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/36 ,  H01L33/382 ,  H01L33/387 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: There is provided a method for manufacturing a nanostructure semiconductor light emitting device, including: forming a mask having a plurality of openings on a base layer; growing a first conductivity-type semiconductor layer on exposed regions of the base layer such that the plurality of openings are filled, to form a plurality of nanocores; partially removing the mask such that side surfaces of the plurality of nanocores are exposed; heat-treating the plurality of nanocores after partially removing the mask; sequentially growing an active layer and a second conductivity-type semiconductor layer on surfaces of the plurality of nanocores to form a plurality of light emitting nanostructures, after the heat treatment; and planarizing upper parts of the plurality of light emitting nanostructures such that upper surfaces of the nanocores are exposed.

Abstract translation: 提供了一种制造纳米结构半导体发光器件的方法，包括：在基底层上形成具有多个开口的掩模; 在所述基底层的暴露区域上生长第一导电型半导体层，使得所述多个开口被填充，以形成多个纳米孔; 部分地去除所述掩模，使得所述多个纳米孔的侧表面暴露; 在部分去除掩模之后对多个纳米孔进行热处理; 在所述多个纳米孔的表面上依次生长有源层和第二导电型半导体层，以在所述热处理之后形成多个发光纳米结构; 并且平坦化多个发光纳米结构的上部，使得纳米孔的上表面被暴露。

公开(公告)号：US20150364642A1

公开(公告)日：2015-12-17

申请号：US14764484

申请日：2014-01-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam-Goo CHA ,  Dong-Ho KIM ,  Geon-Wook YOO

IPC: H01L33/00 ,  H01L33/44 ,  H01L33/24 ,  H01L33/36 ,  H01L33/08 ,  H01L33/06

CPC classification number: H01L33/06 ,  H01L33/005 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/36 ,  H01L33/382 ,  H01L33/387 ,  H01L33/40 ,  H01L33/44 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: There is provided a method for manufacturing a nanostructure semiconductor light emitting device, including: forming a mask having a plurality of openings on a base layer; growing a first conductivity-type semiconductor layer on exposed regions of the base layer such that the plurality of openings are filled, to form a plurality of nanocores; partially removing the mask such that side surfaces of the plurality of nanocores are exposed; heat-treating the plurality of nanocores after partially removing the mask; sequentially growing an active layer and a second conductivity-type semiconductor layer on surfaces of the plurality of nanocores to form a plurality of light emitting nanostructures, after the heat treatment; and planarizing upper parts of the plurality of light emitting nanostructures such that upper surfaces of the nanocores are exposed.

Abstract translation: 提供了一种制造纳米结构半导体发光器件的方法，包括：在基底层上形成具有多个开口的掩模; 在所述基底层的暴露区域上生长第一导电型半导体层，使得所述多个开口被填充，以形成多个纳米孔; 部分地去除所述掩模，使得所述多个纳米孔的侧表面暴露; 在部分去除掩模之后对多个纳米孔进行热处理; 在所述多个纳米孔的表面上依次生长有源层和第二导电型半导体层，以在所述热处理之后形成多个发光纳米结构; 并且平坦化多个发光纳米结构的上部，使得纳米孔的上表面被暴露。