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    Memory controller with improved data reliability and memory system including the same
    2.
    发明授权
    Memory controller with improved data reliability and memory system including the same 有权

    公开(公告)号：US11966608B2

    公开(公告)日：2024-04-23

    申请号：US17895318

    申请日：2022-08-25

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Dohyeon Park ,  Dongeun Shin ,  Wansoo Choi

    IPC: G06F12/00 ,  G06F3/06

    CPC classification number: G06F3/064 ,  G06F3/0617 ,  G06F3/0619 ,  G06F3/065 ,  G06F3/0689

    Abstract: A memory controller with improved data reliability and a memory system including the same are provided, and an operating method of the memory controller includes, based on deterioration information indicating a location of a deterioration region in the plurality of blocks, with respect to data stored in a first block, copying user data of a RAID to a normal region other than the deterioration region of a second block; copying parity data of the RAID among the data stored in the first block to the deterioration region of the second block; and updating mapping information between data constituting one RAID and transmitting the mapping information to the memory device. The deterioration information includes information regarding one or more word lines at specific locations included in the deterioration region in the plurality of blocks.

    Method of writing data in nonvolatile memory device and nonvolatile memory device performing the same
    3.
    发明授权
    Method of writing data in nonvolatile memory device and nonvolatile memory device performing the same 有权

    公开(公告)号：US11733875B2

    公开(公告)日：2023-08-22

    申请号：US17401471

    申请日：2021-08-13

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Wonhee Cho ,  Dongeun Shin

    IPC: G06F3/06 ,  G06F12/02

    CPC classification number: G06F3/0619 ,  G06F3/064 ,  G06F3/0604 ,  G06F3/0659 ,  G06F3/0679 ,  G06F12/0246

    Abstract: Each of a plurality of memory blocks of a nonvolatile memory device is divided into two or more wordline groups having different characteristics. A write command for at least two memory blocks among the plurality of memory blocks is received. During a first partial time interval included in an entire write time interval for two or more memory blocks, a data write operation is performed on a wordline group included in one memory block among the two or more memory blocks in response to a reception of an address for the one memory block. During a second other partial time interval included in the entire write time interval, a data write operation is performed on wordline groups included in the two or more memory blocks in response to a reception of an address for the two or more memory blocks.

    Method, memory controller and storage device to perform garbage collection based on fragmentation ratio of blocks
    4.
    发明授权
    Method, memory controller and storage device to perform garbage collection based on fragmentation ratio of blocks 有权

    公开(公告)号：US11698855B2

    公开(公告)日：2023-07-11

    申请号：US17455232

    申请日：2021-11-17

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Dongeun Shin ,  Jonghwa Kim ,  Alain Tran

    IPC: G06F12/02

    CPC classification number: G06F12/0246 ,  G06F2212/7205

    Abstract: An operating method of a memory controller configured to control a memory device including memory blocks each for storing a plurality of pages is provided. The operating method includes transferring a program command to the memory device based on a write request from a host, updating a valid page bitmap representing validity of a plurality of pages based on valid page information received from the memory device, calculating a fragmentation ratio representing a segmentation degree between at least one valid page and at least one invalid page of a memory block based on the valid page bitmap, determining source blocks among the memory blocks in ascending order of fragmentation ratios, and performing garbage collection on the source blocks.

    MEMORY CONTROLLER AND STORAGE DEVICE INCLUDING THE SAME
    5.
    发明申请
    MEMORY CONTROLLER AND STORAGE DEVICE INCLUDING THE SAME 有权

    公开(公告)号：US20210019087A1

    公开(公告)日：2021-01-21

    申请号：US16799213

    申请日：2020-02-24

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Youngwook KIM ,  Dongeun Shin ,  Wansoo Choi

    IPC: G06F3/06

    Abstract: A storage device includes a memory device including a plurality of memory cells respectively storing data having a plurality of bits, and a memory controller including an operation block including a plurality of unit circuits executing a predetermined function, and a core block executing a control operation on the plurality of memory cells in response to a command from a host. The core block selects at least portions of the plurality of unit circuits to determine selection unit circuits, and generates a control command specifying an operation order of the selection unit circuits. In the operation block, the selection unit circuits operate by the operation order to determine a control voltage required for the control operation, and store the control voltage in at least one of the memory controller or the memory device.

    Method, memory controller and storage device to perform garbage collection based on fragmentation ratio of blocks
    6.
    发明授权
    Method, memory controller and storage device to perform garbage collection based on fragmentation ratio of blocks 有权

    公开(公告)号：US12197322B2

    公开(公告)日：2025-01-14

    申请号：US18330936

    申请日：2023-06-07

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Dongeun Shin ,  Jonghwa Kim ,  Alain Tran

    IPC: G06F12/02

    Abstract: An operating method of a memory controller configured to control a memory device including memory blocks each for storing a plurality of pages is provided. The operating method includes transferring a program command to the memory device based on a write request from a host, updating a valid page bitmap representing validity of a plurality of pages based on valid page information received from the memory device, calculating a fragmentation ratio representing a segmentation degree between at least one valid page and at least one invalid page of a memory block based on the valid page bitmap, determining source blocks among the memory blocks in ascending order of fragmentation ratios, and performing garbage collection on the source blocks.

    MEMORY CONTROLLER AND STORAGE DEVICE EACH USING FRAGMENTATION RATIO, AND OPERATING METHOD THEREOF
    7.
    发明申请
    MEMORY CONTROLLER AND STORAGE DEVICE EACH USING FRAGMENTATION RATIO, AND OPERATING METHOD THEREOF 有权

    公开(公告)号：US20220206938A1

    公开(公告)日：2022-06-30

    申请号：US17455232

    申请日：2021-11-17

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Dongeun Shin ,  Jonghwa Kim ,  Alain Tran

    IPC: G06F12/02 ,  G06F12/0882 ,  G06F12/0808

    Abstract: An operating method of a memory controller configured to control a memory device including memory blocks each for storing a plurality of pages is provided. The operating method includes transferring a program command to the memory device based on a write request from a host, updating a valid page bitmap representing validity of a plurality of pages based on valid page information received from the memory device, calculating a fragmentation ratio representing a segmentation degree between at least one valid page and at least one invalid page of a memory block based on the valid page bitmap, determining source blocks among the memory blocks in ascending order of fragmentation ratios, and performing garbage collection on the source blocks.

    Method of writing data in nonvolatile memory device and nonvolatile memory device performing the same
    8.
    发明授权
    Method of writing data in nonvolatile memory device and nonvolatile memory device performing the same 有权

    公开(公告)号：US12045470B2

    公开(公告)日：2024-07-23

    申请号：US18346627

    申请日：2023-07-03

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Wonhee Cho ,  Dongeun Shin

    IPC: G06F3/06 ,  G06F12/02

    CPC classification number: G06F3/0619 ,  G06F3/0604 ,  G06F3/064 ,  G06F3/0659 ,  G06F3/0679 ,  G06F12/0246

    Abstract: Each of a plurality of memory blocks of a nonvolatile memory device is divided into two or more wordline groups having different characteristics. A write command for at least two memory blocks among the plurality of memory blocks is received. During a first partial time interval included in an entire write time interval for two or more memory blocks, a data write operation is performed on a wordline group included in one memory block among the two or more memory blocks in response to a reception of an address for the one memory block. During a second other partial time interval included in the entire write time interval, a data write operation is performed on wordline groups included in the two or more memory blocks in response to a reception of an address for the two or more memory blocks.

    MEMORY CONTROLLER AND STORAGE DEVICE EACH USING FRAGMENTATION RATIO, AND OPERATING METHOD THEREOF
    9.
    发明公开
    MEMORY CONTROLLER AND STORAGE DEVICE EACH USING FRAGMENTATION RATIO, AND OPERATING METHOD THEREOF 审中-公开

    公开(公告)号：US20230333979A1

    公开(公告)日：2023-10-19

    申请号：US18330936

    申请日：2023-06-07

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Dongeun Shin ,  Jonghwa Kim ,  Alain Tran

    IPC: G06F12/02

    CPC classification number: G06F12/0246 ,  G06F2212/7205

    Abstract: An operating method of a memory controller configured to control a memory device including memory blocks each for storing a plurality of pages is provided. The operating method includes transferring a program command to the memory device based on a write request from a host, updating a valid page bitmap representing validity of a plurality of pages based on valid page information received from the memory device, calculating a fragmentation ratio representing a segmentation degree between at least one valid page and at least one invalid page of a memory block based on the valid page bitmap, determining source blocks among the memory blocks in ascending order of fragmentation ratios, and performing garbage collection on the source blocks.

    Memory controller and storage device including the same
    10.
    发明授权
    Memory controller and storage device including the same 有权

    公开(公告)号：US11200000B2

    公开(公告)日：2021-12-14

    申请号：US16799213

    申请日：2020-02-24

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Youngwook Kim ,  Dongeun Shin ,  Wansoo Choi

    IPC: G06F3/00 ,  G06F3/06 ,  G11C16/26 ,  G11C16/04

    Abstract: A storage device includes a memory device including a plurality of memory cells respectively storing data having a plurality of bits, and a memory controller including an operation block including a plurality of unit circuits executing a predetermined function, and a core block executing a control operation on the plurality of memory cells in response to a command from a host. The core block selects at least portions of the plurality of unit circuits to determine selection unit circuits, and generates a control command specifying an operation order of the selection unit circuits. In the operation block, the selection unit circuits operate by the operation order to determine a control voltage required for the control operation, and store the control voltage in at least one of the memory controller or the memory device.

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